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Modeling of Surface-Roughness Scattering in Ultrathin-Body SOI MOSFETs

IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2191-2203

2007

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Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity

Journal of applied physics, 2007-10, Vol.102 (8), p.083715-083715-14

2007

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Simulation of Silicon Nanowire Transistors Using Boltzmann Transport Equation Under Relaxation Time Approximation

IEEE transactions on electron devices, 2008-03, Vol.55 (3), p.727-736

2008

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Theoretical Study of Some Physical Aspects of Electronic Transport in nMOSFETs at the 10-nm Gate-Length

IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2116-2136

2007

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A three-dimensional simulation of quantum transport in silicon nanowire transistor in the presence of electron-phonon interactions

Journal of applied physics, 2006-06, Vol.99 (12), p.123719-123719-10

2006

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Theoretical Study of Carrier Transport in Silicon Nanowire Transistors Based on the Multisubband Boltzmann Transport Equation

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.2886-2897

2008

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A theoretical study on tunneling based biosensor having a redox-active monolayer using physics based simulation

Journal of applied physics, 2018-01, Vol.123 (2)

2018

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In0.53Ga0.47As-Based nMOSFET Design for Low Standby Power Applications

IEEE transactions on electron devices, 2015-09, Vol.62 (9), p.2816-2823

2015

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Comprehensive Simulation Study of Direct Source-to-Drain Tunneling in Ultra-Scaled Si, Ge, and III-V DG-FETs

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.945-952

2017

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Band-to-Band Tunneling in SiGe: Influence of Alloy Scattering

IEEE electron device letters, 2017-04, Vol.38 (4), p.422-425

2017

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An Efficient Approach to Include Full-Band Effects in Deterministic Boltzmann Equation Solver Based on High-Order Spherical Harmonics Expansion

IEEE transactions on electron devices, 2011-05, Vol.58 (5), p.1287-1294

2011

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General Geometric Fluctuation Modeling for Device Variability Analysis

IEEE transactions on electron devices, 2015-11, Vol.62 (11), p.3588-3594

2015

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A Proposal on an Optimized Device Structure With Experimental Studies on Recent Devices for the DRAM Cell Transistor

IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3325-3335

2007

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Prediction of data retention time distribution of DRAM by physics-based statistical Simulation

IEEE transactions on electron devices, 2005-11, Vol.52 (11), p.2422-2429

2005

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A New Direct Evaluation Method to Obtain the Data Retention Time Distribution of DRAM

IEEE transactions on electron devices, 2006-09, Vol.53 (9), p.2344-2350

2006

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Three-Dimensional Simulation of Dopant-Fluctuation-Induced Threshold Voltage Dispersion in Nonplanar MOS Structures Targeting Flash EEPROM Transistors

IEEE transactions on electron devices, 2008-06, Vol.55 (6), p.1456-1463

2008

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Differential conductance fluctuations in silicon nanowire transistors caused by quasiballistic transport and scattering induced intersubband transitions

Applied physics letters, 2008-02, Vol.92 (8), p.082103-082103-3

2008

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Atomistic simulation of band-to-band tunneling in SiGe: Influence of alloy scattering

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2017, p.173-176

2017

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Nanoscale-nMOSFET junction design: Quantum transport approach

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2017, p.53-56

2017

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Coupled drift-diffusion (DD) and multi-subband Boltzmann transport equation (MSBTE) solver for 3D multi-gate transistors

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2013, p.348-351

2013

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On the efficient methods to solve multi-subband BTE in 1D gas systems: Decoupling approximations versus the accurate approach

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.189-192

2016

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A New Anisotropic Driving Force Model for SiC Device Simulations

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.2024-2029

2024

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Gate Current Calculations Using Spherical Harmonic Expansion of Boltzmann Equation

2009 International Conference on Simulation of Semiconductor Processes and Devices, 2009, p.1-4

2009

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Foreword Special Issue on "New Simulation Methodologies for Next-Generation TCAD Tools"

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5346-5349

2021

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Critical Backscattering Length in Nanotransistors

IEEE electron device letters, 2022-02, Vol.43 (2), p.180-183

2022

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Modeling of Surface-Roughness Scattering in Ultrathin-Body SOI MOSFETs

Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity

Simulation of Silicon Nanowire Transistors Using Boltzmann Transport Equation Under Relaxation Time Approximation

Theoretical Study of Some Physical Aspects of Electronic Transport in nMOSFETs at the 10-nm Gate-Length

A three-dimensional simulation of quantum transport in silicon nanowire transistor in the presence of electron-phonon interactions

Theoretical Study of Carrier Transport in Silicon Nanowire Transistors Based on the Multisubband Boltzmann Transport Equation

A theoretical study on tunneling based biosensor having a redox-active monolayer using physics based simulation

In0.53Ga0.47As-Based nMOSFET Design for Low Standby Power Applications

Comprehensive Simulation Study of Direct Source-to-Drain Tunneling in Ultra-Scaled Si, Ge, and III-V DG-FETs

Band-to-Band Tunneling in SiGe: Influence of Alloy Scattering

An Efficient Approach to Include Full-Band Effects in Deterministic Boltzmann Equation Solver Based on High-Order Spherical Harmonics Expansion

General Geometric Fluctuation Modeling for Device Variability Analysis

A Proposal on an Optimized Device Structure With Experimental Studies on Recent Devices for the DRAM Cell Transistor

Prediction of data retention time distribution of DRAM by physics-based statistical Simulation

A New Direct Evaluation Method to Obtain the Data Retention Time Distribution of DRAM

Three-Dimensional Simulation of Dopant-Fluctuation-Induced Threshold Voltage Dispersion in Nonplanar MOS Structures Targeting Flash EEPROM Transistors

Differential conductance fluctuations in silicon nanowire transistors caused by quasiballistic transport and scattering induced intersubband transitions

Atomistic simulation of band-to-band tunneling in SiGe: Influence of alloy scattering

Nanoscale-nMOSFET junction design: Quantum transport approach

Coupled drift-diffusion (DD) and multi-subband Boltzmann transport equation (MSBTE) solver for 3D multi-gate transistors

On the efficient methods to solve multi-subband BTE in 1D gas systems: Decoupling approximations versus the accurate approach

A New Anisotropic Driving Force Model for SiC Device Simulations

Gate Current Calculations Using Spherical Harmonic Expansion of Boltzmann Equation

Foreword Special Issue on "New Simulation Methodologies for Next-Generation TCAD Tools"

Critical Backscattering Length in Nanotransistors

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