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Side Population Cell Level in Human Breast Cancer and Factors Related to Disease-free Survival

Asian Pacific journal of cancer prevention : APJCP, 2015-03, Vol.16 (3), p.991-996

2015

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High-filling, large-area Ni nanowire arrays and the magnetic properties

Journal of crystal growth, 2003-11, Vol.258 (3), p.337-341

2003

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Top-seeded solution growth and characterization of a novel nonlinear optical crystal MnTeMoO6

Journal of crystal growth, 2013-04, Vol.369, p.43-46

2013

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Structure and photoluminescence properties of SiCN films grown by dual ion beam reactive sputtering deposition

Vacuum, 2014-03, Vol.101, p.205-207

2014

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Annealing temperature dependence of interface characteristic and energy-band alignment in ultra-thin HfLaO/Si and HfLaO/SiGe interfaces

Materials chemistry and physics, 2013-11, Vol.142 (2-3), p.479-483

2013

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Ferromagnetic and photoluminescence properties of Cu-doped ZnO nanorods by radio frequency magnetron sputtering

Materials chemistry and physics, 2013-05, Vol.139 (2-3), p.506-510

2013

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Temperature dependence of electrical properties for MOS capacitor with HfO2/SiO2 gate dielectric stack

Materials science in semiconductor processing, 2013-10, Vol.16 (5), p.1321-1327

2013

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Local structure and energy-band alignment of HfO2 and HfO2–La2O3 on strained Si0.65Ge0.35

Journal of alloys and compounds, 2014-09, Vol.606, p.68-72

2014

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Side Population Cell Level in Human Breast Cancer and Factors Related to Disease-free Survival

Asian Pacific journal of cancer prevention : APJCP, 2015, Vol.16 (3), p.991-996

2015

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Electrical properties improvement of high-k HfO2 films by combination of C4F8 dual-frequency capacitively coupled plasmas treatment with thermal annealing

Applied surface science, 2014-08, Vol.311, p.117-123

2014

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Structural and magnetic properties of transition metal doped ZnO films

Thin solid films, 2010-02, Vol.518 (8), p.2152-2156

2010

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Room temperature deposition of amorphous SiC thin films using low energy ion bombardment

Physica. E, Low-dimensional systems & nanostructures, 2011-08, Vol.43 (10), p.1863-1866

2011

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The structure and photoluminescence properties of Cr-doped SiC films

Applied surface science, 2009-02, Vol.255 (9), p.4711-4715

2009

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Helicon Plasma Discharge for Processing Wall Material

Applied Mechanics and Materials, 2014-02, Vol.513-517 (Applied Science, Materials Science and Information Technologies in Industry), p.28-32

2014

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Effect of Growth Conditions on Morphology and Photoluminescence Properties of ZnO Nanowires Fabricated by Thermal Evaporation without a Metal Catalyst

Advanced materials research, 2013-09, Vol.760-762, p.816-820

2013

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Characterization of Hafnium-Zirconium-Oxide-Nitride films grown by ion beam assisted deposition

Vacuum, 2012-02, Vol.86 (8), p.1078-1082

2012

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Ultra shallow p+/n junction formation by plasma doping (PD) and long pulse all solid-state laser annealing (ASLA) with selective absorption modulation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2005-08, Vol.237 (1-2), p.58-61

2005

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ZnSe heteroepitaxy on GaAs(0 0 1) and GaAs(1 1 0)

Journal of crystal growth, 1998-02, Vol.184, p.41-45

1998

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Atomic nitrogen doping in p-ZnSe with high activation ratio using a high-power plasma source

Journal of crystal growth, 1998-02, Vol.184, p.411-414

1998

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The difference of chemical binding states between ultra shallow plasma doping (PD) and ion implantation (I/I) samples by using hard X-ray photoelectron spectroscopy (HX-PES)

2008 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008, p.796-798

2008

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IEEE_Xplore

Plasma doping (PD) for ultra-shallow junction

Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08), 2008, p.20-24

2008

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IEEE_Xplore

Comparison of chemical binding states between ultra shallow plasma doping (PD) and ion implantation (I/I) combined with Ge pre-amorphizaiton ion implantation (Ge-PAI) by using hard X-ray photoelectron spectroscopy (HX-PES)

Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08), 2008, p.43-45

2008

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IEEE_Xplore

Production-worthy approach of plasma doping (PD)

2008 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008, p.1288-1291

2008

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IEEE_Xplore

The difference of chemical binding states between ultra shallow plasma doping (PD) and ion implantation (I/I) samples studied by hard X-ray photoelectron spectroscopy (HX-PES)

2007 International Workshop on Junction Technology, 2007, p.49-52

2007

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IEEE_Xplore

Hard X-ray Photoelectron spectroscopy (HX-PES) study on chemical binding states of ultra shallow plasma-doped silicon layer for the application of advanced ULSI devices

2006 International Workshop on Junction Technology, 2006, p.116-119

2006

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IEEE_Xplore

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Side Population Cell Level in Human Breast Cancer and Factors Related to Disease-free Survival

High-filling, large-area Ni nanowire arrays and the magnetic properties

Top-seeded solution growth and characterization of a novel nonlinear optical crystal MnTeMoO6

Structure and photoluminescence properties of SiCN films grown by dual ion beam reactive sputtering deposition

Annealing temperature dependence of interface characteristic and energy-band alignment in ultra-thin HfLaO/Si and HfLaO/SiGe interfaces

Ferromagnetic and photoluminescence properties of Cu-doped ZnO nanorods by radio frequency magnetron sputtering

Temperature dependence of electrical properties for MOS capacitor with HfO2/SiO2 gate dielectric stack

Local structure and energy-band alignment of HfO2 and HfO2–La2O3 on strained Si0.65Ge0.35

Side Population Cell Level in Human Breast Cancer and Factors Related to Disease-free Survival

Electrical properties improvement of high-k HfO2 films by combination of C4F8 dual-frequency capacitively coupled plasmas treatment with thermal annealing

Structural and magnetic properties of transition metal doped ZnO films

Room temperature deposition of amorphous SiC thin films using low energy ion bombardment

The structure and photoluminescence properties of Cr-doped SiC films

Helicon Plasma Discharge for Processing Wall Material

Effect of Growth Conditions on Morphology and Photoluminescence Properties of ZnO Nanowires Fabricated by Thermal Evaporation without a Metal Catalyst

Characterization of Hafnium-Zirconium-Oxide-Nitride films grown by ion beam assisted deposition

Ultra shallow p+/n junction formation by plasma doping (PD) and long pulse all solid-state laser annealing (ASLA) with selective absorption modulation

ZnSe heteroepitaxy on GaAs(0 0 1) and GaAs(1 1 0)

Atomic nitrogen doping in p-ZnSe with high activation ratio using a high-power plasma source

The difference of chemical binding states between ultra shallow plasma doping (PD) and ion implantation (I/I) samples by using hard X-ray photoelectron spectroscopy (HX-PES)

Plasma doping (PD) for ultra-shallow junction

Comparison of chemical binding states between ultra shallow plasma doping (PD) and ion implantation (I/I) combined with Ge pre-amorphizaiton ion implantation (Ge-PAI) by using hard X-ray photoelectron spectroscopy (HX-PES)

Production-worthy approach of plasma doping (PD)

The difference of chemical binding states between ultra shallow plasma doping (PD) and ion implantation (I/I) samples studied by hard X-ray photoelectron spectroscopy (HX-PES)

Hard X-ray Photoelectron spectroscopy (HX-PES) study on chemical binding states of ultra shallow plasma-doped silicon layer for the application of advanced ULSI devices

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