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Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach

Journal of physics. D, Applied physics, 2020-05, Vol.53 (22)

2020

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Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al:HfO2/TiN RRAMs

Microelectronic engineering, 2019-06, Vol.214, p.104-109

2019

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Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories

Journal of applied physics, 2021-08, Vol.130 (5)

2021

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Kinetic Monte Carlo analysis of data retention in Al:HfO2-based resistive random access memories

Semiconductor science and technology, 2020-11, Vol.35 (11)

2020

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A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs

Journal of physics. D, Applied physics, 2017-07, Vol.50 (33)

2017

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Variability in HfO2-based memristors described with a new bidimensional statistical technique

Nanoscale, 2024-06, Vol.16 (22), p.10812-10818

2024

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Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices

Journal of physics. D, Applied physics, 2023-09, Vol.56 (36)

2023

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Variability estimation in resistive switching devices, a numerical and kinetic Monte Carlo perspective

Microelectronic engineering, 2022-03, Vol.257, p.111736, Article 111736

2022

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An in-depth simulation study of thermal reset transitions in resistive switching memories

Journal of applied physics, 2013-10, Vol.114 (14)

2013

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Comprehensive study on unipolar RRAM charge conduction and stochastic features: a simulation approach

Journal of physics. D, Applied physics, 2022-04, Vol.55 (15), p.155104

2022

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A new compact model for bipolar RRAMs based on truncated-cone conductive filaments-a Verilog-A approach

Semiconductor science and technology, 2016-10, Vol.31 (11), p.115013

2016

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Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction

Journal of applied physics, 2022-11, Vol.132 (19)

2022

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Multivariate analysis and extraction of parameters in resistive RAMs using the Quantum Point Contact model

Journal of applied physics, 2018-01, Vol.123 (1)

2018

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Simulation of thermal reset transitions in resistive switching memories including quantum effects

Journal of applied physics, 2014-06, Vol.115 (21)

2014

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A physically based model for resistive memories including a detailed temperature and variability description

Microelectronic engineering, 2017-06, Vol.178, p.26-29

2017

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Neural network based analysis of random telegraph noise in resistive random access memories

Semiconductor science and technology, 2020-02, Vol.35 (2), p.25021

2020

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Influence of magnetic field on the operation of TiN/Ti/HfO2/W resistive memories

Microelectronic engineering, 2019-07, Vol.215, p.110983, Article 110983

2019

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A new technique to analyze RTN signals in resistive memories

Microelectronic engineering, 2019-07, Vol.215, p.110994, Article 110994

2019

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Resistive Switching and Charge Transport in Laser-Fabricated Graphene Oxide Memristors: A Time Series and Quantum Point Contact Modeling Approach

Materials, 2019-11, Vol.12 (22), p.3734

2019

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An Analytical I- V Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects

IEEE transactions on electron devices, 2010-11, Vol.57 (11), p.2925-2933

2010

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Unipolar resistive switching behavior in Al2O3/HfO2 multilayer dielectric stacks: fabrication, characterization and simulation

Nanotechnology, 2020-03, Vol.31 (13), p.135202-135202

2020

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An in-depth description of bipolar resistive switching in Cu/HfOx/Pt devices, a 3D kinetic Monte Carlo simulation approach

Journal of applied physics, 2018-04, Vol.123 (15)

2018

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Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states

Materials science in semiconductor processing, 2024-08, Vol.179, p.108480, Article 108480

2024

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An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices

Chaos, solitons and fractals, 2022-07, Vol.160, p.112247, Article 112247

2022

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Analysis of resistive switching processes in TiN/Ti/HfO2/W devices to mimic electronic synapses in neuromorphic circuits

Solid-state electronics, 2019-07, Vol.157, p.25-33

2019

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Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach

Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al:HfO2/TiN RRAMs

Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories

Kinetic Monte Carlo analysis of data retention in Al:HfO2-based resistive random access memories

A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs

Variability in HfO2-based memristors described with a new bidimensional statistical technique

Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices

Variability estimation in resistive switching devices, a numerical and kinetic Monte Carlo perspective

An in-depth simulation study of thermal reset transitions in resistive switching memories

Comprehensive study on unipolar RRAM charge conduction and stochastic features: a simulation approach

A new compact model for bipolar RRAMs based on truncated-cone conductive filaments-a Verilog-A approach

Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction

Multivariate analysis and extraction of parameters in resistive RAMs using the Quantum Point Contact model

Simulation of thermal reset transitions in resistive switching memories including quantum effects

A physically based model for resistive memories including a detailed temperature and variability description

Neural network based analysis of random telegraph noise in resistive random access memories

Influence of magnetic field on the operation of TiN/Ti/HfO2/W resistive memories

A new technique to analyze RTN signals in resistive memories

Resistive Switching and Charge Transport in Laser-Fabricated Graphene Oxide Memristors: A Time Series and Quantum Point Contact Modeling Approach

An Analytical I- V Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects

Unipolar resistive switching behavior in Al2O3/HfO2 multilayer dielectric stacks: fabrication, characterization and simulation

An in-depth description of bipolar resistive switching in Cu/HfOx/Pt devices, a 3D kinetic Monte Carlo simulation approach

Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states

An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices

Analysis of resistive switching processes in TiN/Ti/HfO2/W devices to mimic electronic synapses in neuromorphic circuits

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