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Glycyrrhizin inhibits osteoarthritis development through suppressing the PI3K/AKT/NF-κB signaling pathway in vivo and in vitro

Food & function, 2020-03, Vol.11 (3), p.2126-2136

2020

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Cyanidin ameliorates the progression of osteoarthritis via the Sirt6/NF-κB axis in vitro and in vivo

Food & function, 2019-09, Vol.10 (9), p.5873-5885

2019

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Calycosin increases random-pattern skin flap survival by activating TFEB-mediated regulation of cell death

Journal of functional foods, 2024-04, Vol.115, p.106087, Article 106087

2024

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Catalpol Enhances Random-Pattern Skin Flap Survival by Activating SIRT1-Mediated Enhancement of Autophagy

Oxidative medicine and cellular longevity, 2022, Vol.2022, p.5668226-17

2022

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The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

Applied physics letters, 2011-03, Vol.98 (12), p.121115-121115-3

2011

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Direct-Grown Air-Void Structure in the InGaN Light-Emitting Diodes

IEEE electron device letters, 2012-12, Vol.33 (12), p.1738-1740

2012

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Study of InGaN-Based Light-Emitting Diodes on a Roughened Backside GaN Substrate by a Chemical Wet-Etching Process

IEEE photonics technology letters, 2011-10, Vol.23 (19), p.1373-1375

2011

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Higher output power of near-ultraviolet LED grown on GaN substrate with back-side etching

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.761-764

2012

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The significance of systematic lymph node dissection in surgery for early-stage non-small cell lung cancer patients aged ≤40 years

Journal of thoracic disease, 2021-02, Vol.13 (2), p.1196-1204

2021

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Blue light-emitting diodes with a roughened backside fabricated by wet etching

Applied physics letters, 2009-11, Vol.95 (20)

2009

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An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off Process

Applied physics express, 2010-03, Vol.3 (3), p.31001

2010

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Fabricated InGaN Membranes through a Wet Lateral Etching Process

Applied physics express, 2013-08, Vol.6 (8), p.86501

2013

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InGaN-based light-emitting solar cells with a pattern-nanoporous p-type GaN:Mg layer

Thin solid films, 2010-10, Vol.518 (24), p.7377-7380

2010

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Separating InGaN membranes from GaN/sapphire templates through a crystallographic-etch-limited process

RSC advances, 2013-01, Vol.3 (32), p.13446-13450

2013

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InGaN Light-Emitting Diode with a Nanoporous/Air-Channel Structure

Applied physics express, 2013-01, Vol.6 (1), p.12103

2013

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Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

Solid-state electronics, 2011-08, Vol.62 (1), p.142-145

2011

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Optical Properties of InGaN-Based Light Emitting Diodes Fabricated Through Dry and Wet Mesa Etching Process

Journal of the Electrochemical Society, 2009, Vol.156 (12), p.H930

2009

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Higher Light-Extraction Efficiency of Nitride-Based Light-Emitting Diodes with Hexagonal Inverted Pyramids Structures

Journal of the Electrochemical Society, 2009, Vol.156 (5), p.H316

2009

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InGaN Light-Emitting Diode with a Photochemically Oxidized GaN Nanorod Structure

ECS journal of solid state science and technology, 2013-01, Vol.2 (4), p.R65-R69

2013

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Fabricated nano-disk InGaN/GaN multi-quantum well of the inverse hexagonal pyramids

The Journal of physics and chemistry of solids, 2008-02, Vol.69 (2), p.589-592

2008

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Wet Mesa Etching Process in InGaN-based Light Emitting Diodes

Electrochemical and solid-state letters, 2008, Vol.11 (7), p.H169

2008

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Micro-Square-Array InGaN-Based Light-Emitting Diode with an Insulated Ga2O3 Layer through a Photoelectrochemical Process

Jpn J Appl Phys, 2012-01, Vol.51 (1), p.01AG03-01AG03-4

2012

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Micro-Square-Array InGaN-Based Light-Emitting Diode with an Insulated Ga 2 O 3 Layer through a Photoelectrochemical Process

Japanese Journal of Applied Physics, 2012-01, Vol.51 (1S), p.1

2012

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Micro-Square-Array InGaN-Based Light-Emitting Diode with an Insulated Ga 2 O 3 Layer through a Photoelectrochemical Process

Japanese Journal of Applied Physics, 2012-01, Vol.51 (1S), p.1

2012

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Research on Ship Course Control Based on Course Signal Filter

Applied Mechanics and Materials, 2013-10, Vol.457-458 (Frontiers of Mechanical Engineering and Materials Engineering II), p.844-847

2013

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Glycyrrhizin inhibits osteoarthritis development through suppressing the PI3K/AKT/NF-κB signaling pathway in vivo and in vitro

Cyanidin ameliorates the progression of osteoarthritis via the Sirt6/NF-κB axis in vitro and in vivo

Calycosin increases random-pattern skin flap survival by activating TFEB-mediated regulation of cell death

Catalpol Enhances Random-Pattern Skin Flap Survival by Activating SIRT1-Mediated Enhancement of Autophagy

The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

Direct-Grown Air-Void Structure in the InGaN Light-Emitting Diodes

Study of InGaN-Based Light-Emitting Diodes on a Roughened Backside GaN Substrate by a Chemical Wet-Etching Process

Higher output power of near-ultraviolet LED grown on GaN substrate with back-side etching

The significance of systematic lymph node dissection in surgery for early-stage non-small cell lung cancer patients aged ≤40 years

Blue light-emitting diodes with a roughened backside fabricated by wet etching

An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off Process

Fabricated InGaN Membranes through a Wet Lateral Etching Process

InGaN-based light-emitting solar cells with a pattern-nanoporous p-type GaN:Mg layer

Separating InGaN membranes from GaN/sapphire templates through a crystallographic-etch-limited process

InGaN Light-Emitting Diode with a Nanoporous/Air-Channel Structure

Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

Optical Properties of InGaN-Based Light Emitting Diodes Fabricated Through Dry and Wet Mesa Etching Process

Higher Light-Extraction Efficiency of Nitride-Based Light-Emitting Diodes with Hexagonal Inverted Pyramids Structures

InGaN Light-Emitting Diode with a Photochemically Oxidized GaN Nanorod Structure

Fabricated nano-disk InGaN/GaN multi-quantum well of the inverse hexagonal pyramids

Wet Mesa Etching Process in InGaN-based Light Emitting Diodes

Micro-Square-Array InGaN-Based Light-Emitting Diode with an Insulated Ga2O3 Layer through a Photoelectrochemical Process

Micro-Square-Array InGaN-Based Light-Emitting Diode with an Insulated Ga 2 O 3 Layer through a Photoelectrochemical Process

Micro-Square-Array InGaN-Based Light-Emitting Diode with an Insulated Ga 2 O 3 Layer through a Photoelectrochemical Process

Research on Ship Course Control Based on Course Signal Filter

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