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High reflectivity AlGaN/AlN DBR mirrors grown by MOCVD

Journal of crystal growth, 2007, Vol.298, p.691-694

2007

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PP-079 Clinical characteristics and treatment of 27 cases of H1N1 influenza

International journal of infectious diseases, 2010, Vol.14, p.S49-S49

2010

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Charge storage characteristics in Al/AlN/Si metal–insulator–semiconductor structure based on deep traps in AlN layer

Applied physics. A, Materials science & processing, 2008-03, Vol.90 (3), p.545-548

2008

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Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors

Applied physics. A, Materials science & processing, 2003-10, Vol.77 (5), p.669-671

2003

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Study of transient photoconductivity of GaN epilayer grown by metalorganic chemical vapor deposition

Applied physics. A, Materials science & processing, 1998-11, Vol.67 (5), p.567-570

1998

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Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures

Applied physics. A, Materials science & processing, 2006-07, Vol.84 (1-2), p.95-98

2006

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The template effects on AlN/Al0.3Ga0.7N distributed bragg reflectors grown by MOCVD

Journal of crystal growth, 2007, Vol.298, p.357-360

2007

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The template effects on AlN/Al 0.3Ga 0.7N distributed Bragg reflectors grown by MOCVD

Journal of crystal growth, 2007, Vol.298, p.357-360

2007

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Temperature characterization of Raman scattering in an AlGaN/GaN heterostructure

Applied physics. A, Materials science & processing, 2005-05, Vol.80 (8), p.1729-1731

2005

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A novel InxGa1-xN/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density

Solid-state electronics, 2005-02, Vol.49 (2), p.199-203

2005

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A novel In x Ga 1− x N/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density

Solid-state electronics, 2005, Vol.49 (2), p.199-203

2005

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High hole mobility in p-strained Si grown on relaxed SiC virtual substrate by low-pressure chemical vapor deposition

Optical materials, 2003-07, Vol.23 (1), p.109-112

2003

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Fabrication of silicon nanowires

Applied physics. A, Materials science & processing, 1998-05, Vol.66 (5), p.539-541

1998

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Growth and photocurrent property of GaN/anodic alumina/Si

Optical materials, 2003-07, Vol.23 (1), p.147-150

2003

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Improvement of metal-ferroelectric-silicon structures without buffer layers between Si and ferroelectric films

Applied physics. A, Materials science & processing, 2001, Vol.72 (1), p.85-87

2001

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Influence of growth conditions on the incorporation of substitutional C in Si 1-x-y Ge x C y alloy on Si by chemical vapor deposition using C 2 H 4

Applied physics. A, Materials science & processing, 1999-04, Vol.68 (4), p.457-460

1999

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Study of transient photoconductivity of GaN epilayer grown by metalorganic chemical vapor deposition

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105), 1998, p.673-676

1998

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Room Temperature Ultraviolet Photoluminescence from 800°C Thermally Oxidized Si1−x−yGexCy Thin Films on Si(100) Substrate

MRS proceedings, 1999, Vol.592

1999

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Fabrication and Characterization of Metal-Ferroelectric-Gan Structures

MRS proceedings, 1999, Vol.595, Article F99W11.5

1999

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Room Temperature Ultraviolet Photoluminescence from 800°C Thermally Oxidized Si 1−x−y Ge x C y Thin Films on Si(100) Substrate

MRS proceedings, 1999, Vol.592, Article 165

1999

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Purification and structural characterization of progastrin-derived peptides from a human gastrinoma

The Journal of biological chemistry, 1991-07, Vol.266 (19), p.12223-12227

1991

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Characterization of Metal/Si 1-x Ge x /Si Diodes Fabricated by Cryogenic Processing

MRS proceedings, 1995, Vol.379, Article 121

1995

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Fabrication and Characterization of Metalferroelectric-GAN Structures

MRS Internet journal of nitride semiconductor research, 2000, Vol.5 (S1), p.598-604

2000

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Characterization of Metal/Si1-xGex/Si Diodes Fabricated by Cryogenic Processing

MRS proceedings, 1995, Vol.379

1995

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Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

The Fourth International Workshop on Junction Technology, 2004. IWJT '04, 2004, p.194-197

2004

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High reflectivity AlGaN/AlN DBR mirrors grown by MOCVD

PP-079 Clinical characteristics and treatment of 27 cases of H1N1 influenza

Charge storage characteristics in Al/AlN/Si metal–insulator–semiconductor structure based on deep traps in AlN layer

Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors

Study of transient photoconductivity of GaN epilayer grown by metalorganic chemical vapor deposition

Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures

The template effects on AlN/Al0.3Ga0.7N distributed bragg reflectors grown by MOCVD

The template effects on AlN/Al 0.3Ga 0.7N distributed Bragg reflectors grown by MOCVD

Temperature characterization of Raman scattering in an AlGaN/GaN heterostructure

A novel InxGa1-xN/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density

A novel In x Ga 1− x N/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density

High hole mobility in p-strained Si grown on relaxed SiC virtual substrate by low-pressure chemical vapor deposition

Fabrication of silicon nanowires

Growth and photocurrent property of GaN/anodic alumina/Si

Improvement of metal-ferroelectric-silicon structures without buffer layers between Si and ferroelectric films

Influence of growth conditions on the incorporation of substitutional C in Si 1-x-y Ge x C y alloy on Si by chemical vapor deposition using C 2 H 4

Study of transient photoconductivity of GaN epilayer grown by metalorganic chemical vapor deposition

Room Temperature Ultraviolet Photoluminescence from 800°C Thermally Oxidized Si1−x−yGexCy Thin Films on Si(100) Substrate

Fabrication and Characterization of Metal-Ferroelectric-Gan Structures

Room Temperature Ultraviolet Photoluminescence from 800°C Thermally Oxidized Si 1−x−y Ge x C y Thin Films on Si(100) Substrate

Purification and structural characterization of progastrin-derived peptides from a human gastrinoma

Characterization of Metal/Si 1-x Ge x /Si Diodes Fabricated by Cryogenic Processing

Fabrication and Characterization of Metalferroelectric-GAN Structures

Characterization of Metal/Si1-xGex/Si Diodes Fabricated by Cryogenic Processing

Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

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