UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Simple and scalable synthesis of hierarchical porous carbon derived from cornstalk without pith for high capacitance and energy density

Journal of materials chemistry. A, Materials for energy and sustainability, 2020, Vol.8 (3), p.1469-1479

2020

Volltextzugriff (PDF)

Identification and functional analysis of a pollen fertility-associated gene GhGLP4 of Gossypium hirsutum L

Theoretical and applied genetics, 2021-10, Vol.134 (10), p.3237-3247

2021

Volltextzugriff (PDF)

Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

IEEE electron device letters, 2012-04, Vol.33 (4), p.516-518

2012

Volltextzugriff (PDF)

600-V Normally Off SiNx/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

IEEE electron device letters, 2013-11, Vol.34 (11), p.1373-1375

2013

Volltextzugriff (PDF)

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

Applied physics letters, 2015-02, Vol.106 (5)

2015

Volltextzugriff (PDF)

Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices

IEEE electron device letters, 2012-08, Vol.33 (8), p.1132-1134

2012

Volltextzugriff (PDF)

Fabrication of Pd NPs-supported porous carbon by integrating the reducing reactivity and carbon-rich network of lignin

Scientific reports, 2019-05, Vol.9 (1), p.7300-7300, Article 7300

2019

Volltextzugriff (PDF)

Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement

Applied physics letters, 2014-01, Vol.104 (1)

2014

Volltextzugriff (PDF)

Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications

IEEE transactions on electron devices, 2016-06, Vol.63 (6), p.2469-2473

2016

Volltextzugriff (PDF)

Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges

IEEE electron device letters, 2013-02, Vol.34 (2), p.193-195

2013

Volltextzugriff (PDF)

Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

IEEE electron device letters, 2014-07, Vol.35 (7), p.723-725

2014

Volltextzugriff (PDF)

Plant regeneration via somatic embryogenesis in diploid cultivated cotton (Gossypium arboreum L.)

Plant cell, tissue and organ culture, 2022, Vol.148 (1), p.177-188

2022

Volltextzugriff (PDF)

Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier

IEEE electron device letters, 2015-04, Vol.36 (4), p.318-320

2015

Volltextzugriff (PDF)

A GaN Pulse Width Modulation Integrated Circuit for GaN Power Converters

IEEE transactions on electron devices, 2015-04, Vol.62 (4), p.1143-1149

2015

Volltextzugriff (PDF)

High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation

IEEE electron device letters, 2013-03, Vol.34 (3), p.366-368

2013

Volltextzugriff (PDF)

The effect of smartphone addiction on adolescent health: the moderating effect of leisure physical activities

Psicologia, reflexão e crítica, 2024-06, Vol.37 (1), p.23-10, Article 23

2024

Volltextzugriff (PDF)

Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

Applied physics letters, 2021-12, Vol.119 (23)

2021

Volltextzugriff (PDF)

1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI Platform

IEEE electron device letters, 2013-03, Vol.34 (3), p.357-359

2013

Volltextzugriff (PDF)

CuS@Corn Stalk/Chitin Composite Hydrogel for Photodegradation and Antibacterial

Polymers, 2019-08, Vol.11 (9), p.1393

2019

Volltextzugriff (PDF)

High Acid Biochar-Based Solid Acid Catalyst from Corn Stalk for Lignin Hydrothermal Degradation

Polymers, 2020-07, Vol.12 (7), p.1623

2020

Volltextzugriff (PDF)

Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform

IEEE transactions on electron devices, 2014-11, Vol.61 (11), p.3808-3813

2014

Volltextzugriff (PDF)

Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1059-1065

2015

Volltextzugriff (PDF)

Normally off Al2O3-AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation

IEEE transactions on electron devices, 2015-03, Vol.62 (3), p.821-827

2015

Volltextzugriff (PDF)

A High-Speed Deep-Trench MOSFET With a Self-Biased Split Gate

IEEE transactions on electron devices, 2010-08, Vol.57 (8), p.1972-1977

2010

Volltextzugriff (PDF)

Characterization of VT-instability in enhancement-mode Al2O3-AlGaN/GaN MIS-HEMTs

Physica status solidi. C, 2013-11, Vol.10 (11), p.1397-1400

2013

Volltextzugriff (PDF)

1 – 25 von 204

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(176)
Mit Volltextzugriff
(185)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(144)
Physical Sciences
(70)
Technology
(70)
Life Sciences & Biomedicine
(48)
Physics
(47)
Engineering
(45)
Engineering, Electrical & Electronic
(38)
Physics, Applied
(36)
Gallium Nitrides
(35)
Logic Gates
(31)
Hemts
(28)
Gallium Nitride
(27)
Materials Science
(25)
Aluminum Gallium Nitride
(24)
Aluminum Gallium Nitrides
(21)
Chemistry
(19)
High Electron Mobility Transistors
(17)
Modfets
(16)
Semiconductor Devices
(16)
Environmental Sciences & Ecology
(14)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 7 Tagen
(1)
... seit 90 Tagen
(9)

Menü

Weitere Dienste

Einstellungen

Simple and scalable synthesis of hierarchical porous carbon derived from cornstalk without pith for high capacitance and energy density

Identification and functional analysis of a pollen fertility-associated gene GhGLP4 of Gossypium hirsutum L

Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

600-V Normally Off SiNx/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices

Fabrication of Pd NPs-supported porous carbon by integrating the reducing reactivity and carbon-rich network of lignin

Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement

Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications

Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges

Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

Plant regeneration via somatic embryogenesis in diploid cultivated cotton (Gossypium arboreum L.)

Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier

A GaN Pulse Width Modulation Integrated Circuit for GaN Power Converters

High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation

The effect of smartphone addiction on adolescent health: the moderating effect of leisure physical activities

Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI Platform

CuS@Corn Stalk/Chitin Composite Hydrogel for Photodegradation and Antibacterial

High Acid Biochar-Based Solid Acid Catalyst from Corn Stalk for Lignin Hydrothermal Degradation

Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform

Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs

Normally off Al2O3-AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation

A High-Speed Deep-Trench MOSFET With a Self-Biased Split Gate

Characterization of VT-instability in enhancement-mode Al2O3-AlGaN/GaN MIS-HEMTs

Suchergebnisse filtern