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High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si

Applied physics letters, 2020-08, Vol.117 (7)

2020

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Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx as Gate Dielectric

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.824-831

2017

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Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.832-839

2017

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Vertical GaN trench MOSFETs with step-graded channel doping

Applied physics letters, 2022-06, Vol.120 (24)

2022

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Monolithic integration of enhancement-mode vertical driving transistorson a standard InGaN/GaN light emitting diode structure

Applied physics letters, 2016-08, Vol.109 (5)

2016

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Enhanced gate stack stability in GaN transistors with gate dielectric of bilayer SiNx by low pressure chemical vapor deposition

Applied physics letters, 2018-12, Vol.113 (23)

2018

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Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition

Applied physics letters, 2014-09, Vol.105 (10)

2014

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Characterization of in situ SiNx thin film grown on AlN/GaN heterostructure by metal-organic chemical vapor deposition

Applied physics letters, 2014-01, Vol.104 (3)

2014

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High Performance Monolithically Integrated GaN Driving VMOSFET on LED

IEEE electron device letters, 2017-06, Vol.38 (6), p.752-755

2017

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Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With In Situ SiNx Gate Dielectric

IEEE transactions on electron devices, 2015-06, Vol.62 (6), p.1862-1869

2015

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An Auto-Zero-Voltage-Switching Quasi-Resonant LED Driver With GaN FETs and Fully Integrated LED Shunt Protectors

IEEE journal of solid-state circuits, 2018-03, Vol.53 (3), p.913-923

2018

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Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Dielectric Layer

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.540-546

2022

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Ultralow reverse leakage current in AlGaN/GaN lateral Schottky barrier diodes grown on bulk GaN substrate

Applied physics express, 2016-03, Vol.9 (3), p.31001

2016

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Structural and electronic properties of cubic boron nitride doped with zinc

Journal of applied physics, 2014-07, Vol.116 (4)

2014

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Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platform

Optics express, 2021-03, Vol.29 (6), p.8358-8364

2021

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Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K

IEEE journal of the Electron Devices Society, 2020-01, Vol.8, p.1-1

2020

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Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxy

Optics letters, 2018-07, Vol.43 (14), p.3401-3404

2018

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High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown

IEEE electron device letters, 2019-04, Vol.40 (4), p.530-533

2019

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1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current

IEEE transactions on electron devices, 2021-02, Vol.68 (2), p.653-657

2021

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Vertical β‐Ga2O3 Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Performance

Physica status solidi. A, Applications and materials science, 2020-02, Vol.217 (3), p.n/a

2020

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GaN quasi-vertical trench MOSFETs grown on Si substrate with ON-current exceeding 1 A

Applied physics express, 2022-12, Vol.15 (12), p.121004

2022

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Enhancing ON- and OFF-State Performance of Quasi-Vertical GaN Trench MOSFETs on Sapphire With Reduced Interface Charges and a Thick Bottom Dielectric

IEEE electron device letters, 2022-03, Vol.43 (3), p.346-349

2022

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Band alignment and electrical properties of NiO/β-Ga2O3 heterojunctions with different β-Ga2O3 orientations

Applied surface science, 2023-06, Vol.622, p.156917, Article 156917

2023

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Effects of p-GaN Body Doping Concentration on the ON-State Performance of Vertical GaN Trench MOSFETs

IEEE electron device letters, 2021-07, Vol.42 (7), p.970-973

2021

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Small Vth Shift and Low Dynamic Ron in GaN MOSHEMT With ZrO2 Gate Dielectric

IEEE transactions on electron devices, 2023-11, Vol.70 (11), p.5590-5595

2023

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High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si

Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx as Gate Dielectric

Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

Vertical GaN trench MOSFETs with step-graded channel doping

Monolithic integration of enhancement-mode vertical driving transistorson a standard InGaN/GaN light emitting diode structure

Enhanced gate stack stability in GaN transistors with gate dielectric of bilayer SiNx by low pressure chemical vapor deposition

Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition

Characterization of in situ SiNx thin film grown on AlN/GaN heterostructure by metal-organic chemical vapor deposition

High Performance Monolithically Integrated GaN Driving VMOSFET on LED

Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With In Situ SiNx Gate Dielectric

An Auto-Zero-Voltage-Switching Quasi-Resonant LED Driver With GaN FETs and Fully Integrated LED Shunt Protectors

Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Dielectric Layer

Ultralow reverse leakage current in AlGaN/GaN lateral Schottky barrier diodes grown on bulk GaN substrate

Structural and electronic properties of cubic boron nitride doped with zinc

Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platform

Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K

Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxy

High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current

Vertical β‐Ga2O3 Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Performance

GaN quasi-vertical trench MOSFETs grown on Si substrate with ON-current exceeding 1 A

Enhancing ON- and OFF-State Performance of Quasi-Vertical GaN Trench MOSFETs on Sapphire With Reduced Interface Charges and a Thick Bottom Dielectric

Band alignment and electrical properties of NiO/β-Ga2O3 heterojunctions with different β-Ga2O3 orientations

Effects of p-GaN Body Doping Concentration on the ON-State Performance of Vertical GaN Trench MOSFETs

Small Vth Shift and Low Dynamic Ron in GaN MOSHEMT With ZrO2 Gate Dielectric

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