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Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material

Chemical Society reviews, 2015-05, Vol.44 (9), p.2757-2785

2015

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Immobilization of Pycnoporus sanguineus laccase on magnetic chitosan microspheres

Biochemical engineering journal, 2005-08, Vol.25 (1), p.15-23

2005

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Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression

Chinese physics B, 2015-06, Vol.24 (6), p.67301-1-067301-5

2015

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Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers

IEEE photonics journal, 2018-08, Vol.10 (4), p.1-7

2018

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Distributed OTDR-interferometric sensing network with identical ultra-weak fiber Bragg gratings

Optics express, 2015-11, Vol.23 (22), p.29038-29046

2015

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Resonant Raman spectroscopy of twisted multilayer graphene

Nature communications, 2014-11, Vol.5 (1), p.5309-5309, Article 5309

2014

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Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide

Japanese Journal of Applied Physics, 2018-07, Vol.57 (7), p.70307

2018

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Design Considerations for GaN-Based Blue Laser Diodes With InGaN Upper Waveguide Layer

IEEE journal of selected topics in quantum electronics, 2013-07, Vol.19 (4), p.1500705-1500705

2013

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Single-Photon Emission from GaAs Quantum Dots Embedded in Nanowires

Chinese physics letters, 2015-07, Vol.32 (7), p.198-201

杨爽窦秀明喻颖倪海桥牛智川江德生孙宝权

2015

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Photovoltaic Response of InGaN/GaN Multi-quantum Well Solar Cells Enhanced by Reducing p-type GaN Resistivity

IEEE journal of photovoltaics, 2016-03, Vol.6 (2), p.454-459

2016

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Au Microdisk-Size Dependence of Quantum Dot Emission from the Hybrid Metal-Distributed Bragg Reflector Structures Employed for Single Photon Sources

Chinese physics letters, 2015-10, Vol.32 (10), p.134-137

王海艳苏丹杨爽窦秀明朱海军江德生倪海桥牛智川赵翠兰孙宝权

2015

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Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer

Chinese physics B, 2015-11, Vol.24 (11), p.389-392

李晓静赵德刚江德生陈平朱建军刘宗顺乐伶聪杨静何晓光

2015

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Temperature-dependent photoluminescence spectra of GaN epitaxial layer grown on Si (111) substrate

Chinese physics B, 2015-10, Vol.24 (10), p.108101-1-108101-4

2015

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Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode

Chinese physics B, 2015-12, Vol.24 (12), p.127801

2015

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Second-Order Correlation Function for Asymmetric-to-Symmetric Transitions due to Spectrally Indistinguishable Biexciton Cascade Emission

Chinese physics letters, 2015-12, Vol.32 (12), p.65-69

武雪飞窦秀明丁琨周鹏宇倪海桥牛智川朱海军江德生赵翠兰孙宝权

2015

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Bandgap Engineering in Wurtzite GaAs Nanowires by Hydrostatic Pressure

Chinese physics letters, 2015-07, Vol.32 (7), p.195-197

杨爽丁琨窦秀明喻颖倪海桥牛智川江德生孙宝权

2015

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Optical analysis of dislocation-related physical processes in GaN-based epilayers

Physica Status Solidi (b), 2007-08, Vol.244 (8), p.2878-2891

2007

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The Resonant Fluorescence of a Single InAs Quantum Dot in a Cavity

Chinese physics letters, 2012-10, Vol.29 (10), p.104203-1-104203-3

2012

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Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage

Chinese physics B, 2015-05, Vol.24 (5), p.587-591

侍铭陈平赵德刚江德生郑军成步文朱建军刘宗顺刘炜李翔赵丹梅王启明刘建平张书明杨辉

2015

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Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

Chinese physics B, 2015-09, Vol.24 (9), p.408-412

李晓静赵德刚江德生陈平朱建军刘宗顺乐伶聪杨静何晓光张立群刘建平张书明杨辉

2015

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Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure

Chinese physics B, 2015-09, Vol.24 (9), p.399-402

何晓光赵德刚江德生朱建军陈平刘宗顺乐伶聪杨静李晓静张书明杨辉

2015

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The Effects of a Low-Temperature GaN Interlayer on the Performance of InGaN/GaN Solar Cells

Chinese physics letters, 2013-02, Vol.30 (2), p.28801-1-028801-3

2013

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A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe

Chinese physics letters, 2013-10, Vol.30 (10), p.104205-1-104205-4, Article 104205

2013

Volltextzugriff (PDF)

The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells

Chinese physics B, 2013-06, Vol.22 (6), p.666-669

李亮赵德刚江德生刘宗顺陈平吴亮亮乐伶聪王辉杨辉

2013

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Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells

Chinese physics B, 2014-06, Vol.23 (6), p.629-634

杨静赵德刚江德生刘宗顺陈平李亮吴亮亮乐伶聪李晓静何晓光王辉朱建军张书明张宝顺杨辉

2014

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Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material

Immobilization of Pycnoporus sanguineus laccase on magnetic chitosan microspheres

Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression

Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers

Distributed OTDR-interferometric sensing network with identical ultra-weak fiber Bragg gratings

Resonant Raman spectroscopy of twisted multilayer graphene

Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide

Design Considerations for GaN-Based Blue Laser Diodes With InGaN Upper Waveguide Layer

Single-Photon Emission from GaAs Quantum Dots Embedded in Nanowires

Photovoltaic Response of InGaN/GaN Multi-quantum Well Solar Cells Enhanced by Reducing p-type GaN Resistivity

Au Microdisk-Size Dependence of Quantum Dot Emission from the Hybrid Metal-Distributed Bragg Reflector Structures Employed for Single Photon Sources

Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer

Temperature-dependent photoluminescence spectra of GaN epitaxial layer grown on Si (111) substrate

Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode

Second-Order Correlation Function for Asymmetric-to-Symmetric Transitions due to Spectrally Indistinguishable Biexciton Cascade Emission

Bandgap Engineering in Wurtzite GaAs Nanowires by Hydrostatic Pressure

Optical analysis of dislocation-related physical processes in GaN-based epilayers

The Resonant Fluorescence of a Single InAs Quantum Dot in a Cavity

Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage

Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure

The Effects of a Low-Temperature GaN Interlayer on the Performance of InGaN/GaN Solar Cells

A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe

The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells

Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells

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