UB Paderborn / Katalog / Suche / in CDI

Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition

Thin solid films, 2014-08, Vol.564, p.135-139

2014

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Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition

Journal of crystal growth, 2006-03, Vol.289 (1), p.72-75

2006

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Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC

Chemical physics letters, 2016-05, Vol.651, p.76-79

2016

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Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties

Physica. B, Condensed matter, 2010-11, Vol.405 (22), p.4668-4672

2010

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Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition

Applied surface science, 2006-12, Vol.253 (5), p.2452-2455

2006

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The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer

Journal of crystal growth, 2007-05, Vol.303 (2), p.414-418

2007

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Effects of underfill materials on the reliability of low- K flip-chip packaging

Microelectronics and reliability, 2006, Vol.46 (1), p.155-163

2006

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Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition

Journal of crystal growth, 2008-12, Vol.310 (24), p.5266-5269

2008

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Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates

Solid state communications, 2004-12, Vol.132 (10), p.707-711

2004

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Suppression the formation of V-pits in InGaN/ GaN multi-quantum well growth and its effect on the performance of GaN based laser diodes

Journal of alloys and compounds, 2020-05, Vol.822, p.153571, Article 153571

2020

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Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD

Journal of alloys and compounds, 2018-10, Vol.765, p.245-248

2018

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Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3

Superlattices and microstructures, 2017-02, Vol.102, p.35-39

2017

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Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD

Journal of crystal growth, 2006-09, Vol.295 (1), p.7-11

2006

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Improvement of thermal stability of InGaN/GaN multiple-quantum-well by reducing the density of threading dislocations

Optical materials, 2018-11, Vol.85, p.14-17

2018

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Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness

Journal of alloys and compounds, 2015-03, Vol.625, p.266-270

2015

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Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots

Journal of crystal growth, 2002, Vol.234 (2), p.354-358

2002

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The compensation role of deep defects in the electric properties of lightly Si-doped GaN

Journal of alloys and compounds, 2019-01, Vol.773, p.1182-1186

2019

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Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells

Superlattices and microstructures, 2016-09, Vol.97, p.186-192

2016

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The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells

Optical materials, 2018-12, Vol.86, p.460-463

2018

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Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer

Optics and laser technology, 2019-04, Vol.111, p.810-813

2019

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Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs

Journal of alloys and compounds, 2016-10, Vol.681, p.522-526

2016

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Enhanced infrared absorption of spatially ordered quantum dot arrays

Infrared physics & technology, 2007-04, Vol.50 (2-3), p.162-165

2007

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GaN high electron mobility transistors with AlInN back barriers

Journal of alloys and compounds, 2016-03, Vol.662, p.16-19

2016

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Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer

Superlattices and microstructures, 2018-01, Vol.113, p.690-695

2018

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Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers

Journal of alloys and compounds, 2015-06, Vol.635, p.82-86

2015

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Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition

Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition

Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC

Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties

Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition

The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer

Effects of underfill materials on the reliability of low- K flip-chip packaging

Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition

Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates

Suppression the formation of V-pits in InGaN/ GaN multi-quantum well growth and its effect on the performance of GaN based laser diodes

Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD

Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3

Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD

Improvement of thermal stability of InGaN/GaN multiple-quantum-well by reducing the density of threading dislocations

Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness

Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots

The compensation role of deep defects in the electric properties of lightly Si-doped GaN

Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells

The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells

Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer

Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs

Enhanced infrared absorption of spatially ordered quantum dot arrays

GaN high electron mobility transistors with AlInN back barriers

Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer

Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers

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