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Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors

IEEE electron device letters, 2015-03, Vol.36 (3), p.232-234

2015

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Characterizations of Amorphous IGZO Thin-Film Transistors With Low Subthreshold Swing

IEEE electron device letters, 2011-09, Vol.32 (9), p.1245-1247

2011

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InGaN-GaN Nanorod Light Emitting Arrays Fabricated by Silica Nanomasks

IEEE journal of quantum electronics, 2008-05, Vol.44 (5), p.468-472

2008

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Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AlGaN/GaN/AlGaN Double Heterostructure

IEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1505-1510

2017

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Indium–gallium–zinc oxide thin film transistors with a hybrid-channel structure for defect suppression and mobility improvement

Thin solid films, 2013-07, Vol.540, p.247-250

2013

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GaN-based LEDs surrounded with a two-dimensional nanohole photonic crystal structure for effective laterally guided mode coupling

Optics letters, 2011-05, Vol.36 (9), p.1611

2011

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Application of Nanosphere Lithography to LED Surface Texturing and to the Fabrication of Nanorod LED Arrays

IEEE journal of selected topics in quantum electronics, 2009-07, Vol.15 (4), p.1242-1249

2009

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Nanoscale Epitaxial Lateral Overgrowth of GaN-Based Light-Emitting Diodes on an AlN Nanorod-Array Template

IEEE journal of quantum electronics, 2015-05, Vol.51 (5), p.1-5

2015

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Polarization-Dependent Sidewall Light Diffraction of LEDs Surrounded by Nanorod Arrays

IEEE photonics technology letters, 2009-11, Vol.21 (22), p.1683-1685

2009

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Optical Properties of the Partially Strain Relaxed InGaN/GaN Light-Emitting Diodes Induced by p-Type GaN Surface Texturing

IEEE electron device letters, 2011-02, Vol.32 (2), p.182-184

2011

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Role of } / } Gate Dielectric on the Reduction of Low-Frequent Noise and the Enhancement of a-IGZO TFT Electrical Performance

Journal of display technology, 2012-12, Vol.8 (12), p.695-698

2012

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Contributions of sidewall illumination and current spreading to the light emission of InGaN-GaN light-emitting diode arrays

IEEE photonics technology letters, 2006-04, Vol.18 (8), p.983-985

2006

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Demonstration of radio-frequency response of amorphous IGZO thin film transistors on the glass substrate

Solid-state electronics, 2015-02, Vol.104, p.122-125

2015

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Quasi-static capacitance–voltage characterizations of carrier accumulation and depletion phenomena in pentacene thin film transistors

Solid-state electronics, 2008-02, Vol.52 (2), p.269-274

2008

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Transparent ZnO Thin-Film Transistors on Glass and Plastic Substrates Using Post-Sputtering Oxygen Passivation

Journal of display technology, 2009-06, Vol.5 (6), p.192-197

2009

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High-speed modulation from the fast mode extraction of a photonic crystal light-emitting diode

Journal of applied physics, 2016-01, Vol.119 (1)

2016

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GaN-based LEDs with photonic crystal nanorod sidewall reflectors for versatile radiation directionality control

CLEO: 2011 - Laser Science to Photonic Applications, 2011, p.1-2

2011

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High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes

Optics express, 2010-04, Vol.18 (8), p.7664-7669

2010

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GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength

Optics express, 2008-07, Vol.16 (14), p.10549-10556

2008

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Nanoparticle-coated n-ZnO/p-Si photodiodes with improved photoresponsivities and acceptance angles for potential solar cell applications

Nanotechnology, 2009-06, Vol.20 (24), p.245204-245204 (6)

2009

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Current collapse suppression by SiO2 passivation in p-GaN/AlGaN/GaN enhancement-mode high electron mobility transistors

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016, p.1-2

2016

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Far-field self-focusing and -defocusing radiation behaviors of the electroluminescent light sources due to negative refraction

Optics letters, 2013-01, Vol.38 (2), p.184

2013

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Correlation of angular light profiles of light-emitting diodes to spatial spontaneous emissions from photonic crystals

Journal of applied physics, 2013-10, Vol.114 (14)

2013

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Investigation of the strain induced optical transition energy shift of the GaN nanorod light emitting diode arrays

Optics express, 2011-07, Vol.19 Suppl 4 (S4), p.A900-A907

2011

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Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays

Nanotechnology, 2011-01, Vol.22 (4), p.045202-045202

2011

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Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors

Characterizations of Amorphous IGZO Thin-Film Transistors With Low Subthreshold Swing

InGaN-GaN Nanorod Light Emitting Arrays Fabricated by Silica Nanomasks

Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AlGaN/GaN/AlGaN Double Heterostructure

Indium–gallium–zinc oxide thin film transistors with a hybrid-channel structure for defect suppression and mobility improvement

GaN-based LEDs surrounded with a two-dimensional nanohole photonic crystal structure for effective laterally guided mode coupling

Application of Nanosphere Lithography to LED Surface Texturing and to the Fabrication of Nanorod LED Arrays

Nanoscale Epitaxial Lateral Overgrowth of GaN-Based Light-Emitting Diodes on an AlN Nanorod-Array Template

Polarization-Dependent Sidewall Light Diffraction of LEDs Surrounded by Nanorod Arrays

Optical Properties of the Partially Strain Relaxed InGaN/GaN Light-Emitting Diodes Induced by p-Type GaN Surface Texturing

Role of } / } Gate Dielectric on the Reduction of Low-Frequent Noise and the Enhancement of a-IGZO TFT Electrical Performance

Contributions of sidewall illumination and current spreading to the light emission of InGaN-GaN light-emitting diode arrays

Demonstration of radio-frequency response of amorphous IGZO thin film transistors on the glass substrate

Quasi-static capacitance–voltage characterizations of carrier accumulation and depletion phenomena in pentacene thin film transistors

Transparent ZnO Thin-Film Transistors on Glass and Plastic Substrates Using Post-Sputtering Oxygen Passivation

High-speed modulation from the fast mode extraction of a photonic crystal light-emitting diode

GaN-based LEDs with photonic crystal nanorod sidewall reflectors for versatile radiation directionality control

High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes

GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength

Nanoparticle-coated n-ZnO/p-Si photodiodes with improved photoresponsivities and acceptance angles for potential solar cell applications

Current collapse suppression by SiO2 passivation in p-GaN/AlGaN/GaN enhancement-mode high electron mobility transistors

Far-field self-focusing and -defocusing radiation behaviors of the electroluminescent light sources due to negative refraction

Correlation of angular light profiles of light-emitting diodes to spatial spontaneous emissions from photonic crystals

Investigation of the strain induced optical transition energy shift of the GaN nanorod light emitting diode arrays

Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays

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