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On the Ammonia Gas Sensing Performance of a RF Sputtered NiO Thin-Film Sensor

IEEE sensors journal, 2015-07, Vol.15 (7), p.3711-3715

2015

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Improved Light Extraction Efficiency of a High-Power GaN-Based Light-Emitting Diode With a Three-Dimensional-Photonic Crystal (3-D-PhC) Backside Reflector

IEEE electron device letters, 2013-06, Vol.34 (6), p.777-779

2013

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Characteristics of GaN-Based LEDs With Hybrid Microhole Arrays and SiO2 Microspheres/Nanoparticles Structures

IEEE transactions on electron devices, 2017-07, Vol.64 (7), p.2854-2858

2017

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Study of GaN-Based LEDs With Hybrid SiO2 Microsphere/Nanosphere AntiReflection Coating as a Passivation Layer by a Rapid Convection Deposition

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.1134-1139

2017

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Enhanced Light Extraction of a High-Power GaN-Based Light-Emitting Diode With a Nanohemispherical Hybrid Backside Reflector

IEEE transactions on electron devices, 2015-10, Vol.62 (10), p.3296-3301

2015

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Performance Enhancement of GaN-Based Light-Emitting Diodes by Using Transparent Ag Metal Line Patterns

IEEE transactions on electron devices, 2017-06, Vol.64 (6), p.2542-2548

2017

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Nitrogen Oxide (NO2) Gas Sensing Performance of ZnO Nanoparticles (NPs)/Sapphire-Based Sensors

IEEE sensors journal, 2015-07, Vol.15 (7), p.3759-3763

2015

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Implementation of an indium-tin-oxide (ITO) direct-Ohmic contact structure on a GaN-based light emitting diode

Optics express, 2011-07, Vol.19 (15), p.14662-14670

2011

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Performance Enhancement on an InGaP/InGaAs PHEMT With an Electrophoretic Deposition Gate Structure

IEEE electron device letters, 2014-01, Vol.35 (1), p.18-20

2014

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Hydrogen-Sensing Properties of a Pd/AlGaN/GaN-Based Field-Effect Transistor Under a Nitrogen Ambience

IEEE sensors journal, 2013-05, Vol.13 (5), p.1787-1793

2013

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Improved Performance of an InGaN-Based Light-Emitting Diode With a p-GaN/n-GaN Barrier Junction

IEEE journal of quantum electronics, 2011-06, Vol.47 (6), p.755-761

2011

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On an Electroless Plating (EP)-Based Pd/AlGaN/GaN Heterostructure Field-Effect Transistor (HFET)-Type Hydrogen Gas Sensor

IEEE electron device letters, 2012-06, Vol.33 (6), p.788-790

2012

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On a GaN-Based Light-Emitting Diode With an Aluminum Metal Mirror Deposited on Naturally-Textured V-Shaped Pits Grown on the p-GaN Surface

IEEE electron device letters, 2012-02, Vol.33 (2), p.227-229

2012

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On a GaN-based ion sensitive field-effect transistor (ISFET) with a hydrogen peroxide surface treatment

Sensors and actuators. B, Chemical, 2015-03, Vol.209, p.658-663

2015

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Hydrogen sensing performance of a nickel oxide (NiO) thin film-based device

International journal of hydrogen energy, 2015-01, Vol.40 (1), p.729-734

2015

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Study of an electroless plating (EP)-based Pt/AlGaN/GaN Schottky diode-type ammonia sensor

Sensors and actuators. B, Chemical, 2014-11, Vol.203, p.258-262

2014

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Enhancement of hydrogen sensing performance of a GaN-based Schottky diode with a hydrogen peroxide surface treatment

Sensors and actuators. B, Chemical, 2015-05, Vol.211, p.303-309

2015

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On a Schottky diode-type hydrogen sensor with pyramid-like Pd nanostructures

International journal of hydrogen energy, 2015-08, Vol.40 (29), p.9006-9012

2015

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Hydrogen sensing characteristics of a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by sensitization, activation, and electroless plating (EP) approaches

Sensors and actuators. B, Chemical, 2015-06, Vol.212, p.127-136

2015

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Implementation of a High-Performance GaN-Based Light-Emitting Diode Grown on a Nanocomb-Shaped Patterned Sapphire Substrate

IEEE journal of quantum electronics, 2014-12, Vol.50 (12), p.973-980

2014

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Enhanced Performance of a GaN-Based LED Prepared by an Anodized Aluminum Oxide-Nanoporous Pattern Sapphire Substrate

IEEE electron device letters, 2013-07, Vol.34 (7), p.909-911

2013

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Hydrogen sensing characteristics of Pd/SiO2-nanoparticles (NPs)/AlGaN metal-oxide-semiconductor (MOS) diodes

International journal of hydrogen energy, 2014-12, Vol.39 (35), p.20313-20318

2014

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Comprehensive study of hydrogen sensing phenomena of an electroless plating (EP)-based Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)

Sensors and actuators. B, Chemical, 2014-01, Vol.190, p.913-921

2014

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Effects of the Use of an Aluminum Reflecting and an SiO2 Insulating Layers (RIL) on the Performance of a GaN-Based Light-Emitting Diode With the Naturally Textured p-GaN Surface

IEEE transactions on electron devices, 2013-07, Vol.60 (7), p.2282-2289

2013

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Improved performance of GaN-based light-emitting diodes by using short-period superlattice structures

Progress in natural science, 2010-11, Vol.20 (1), p.70-75

2010

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On the Ammonia Gas Sensing Performance of a RF Sputtered NiO Thin-Film Sensor

Improved Light Extraction Efficiency of a High-Power GaN-Based Light-Emitting Diode With a Three-Dimensional-Photonic Crystal (3-D-PhC) Backside Reflector

Characteristics of GaN-Based LEDs With Hybrid Microhole Arrays and SiO2 Microspheres/Nanoparticles Structures

Study of GaN-Based LEDs With Hybrid SiO2 Microsphere/Nanosphere AntiReflection Coating as a Passivation Layer by a Rapid Convection Deposition

Enhanced Light Extraction of a High-Power GaN-Based Light-Emitting Diode With a Nanohemispherical Hybrid Backside Reflector

Performance Enhancement of GaN-Based Light-Emitting Diodes by Using Transparent Ag Metal Line Patterns

Nitrogen Oxide (NO2) Gas Sensing Performance of ZnO Nanoparticles (NPs)/Sapphire-Based Sensors

Implementation of an indium-tin-oxide (ITO) direct-Ohmic contact structure on a GaN-based light emitting diode

Performance Enhancement on an InGaP/InGaAs PHEMT With an Electrophoretic Deposition Gate Structure

Hydrogen-Sensing Properties of a Pd/AlGaN/GaN-Based Field-Effect Transistor Under a Nitrogen Ambience

Improved Performance of an InGaN-Based Light-Emitting Diode With a p-GaN/n-GaN Barrier Junction

On an Electroless Plating (EP)-Based Pd/AlGaN/GaN Heterostructure Field-Effect Transistor (HFET)-Type Hydrogen Gas Sensor

On a GaN-Based Light-Emitting Diode With an Aluminum Metal Mirror Deposited on Naturally-Textured V-Shaped Pits Grown on the p-GaN Surface

On a GaN-based ion sensitive field-effect transistor (ISFET) with a hydrogen peroxide surface treatment

Hydrogen sensing performance of a nickel oxide (NiO) thin film-based device

Study of an electroless plating (EP)-based Pt/AlGaN/GaN Schottky diode-type ammonia sensor

Enhancement of hydrogen sensing performance of a GaN-based Schottky diode with a hydrogen peroxide surface treatment

On a Schottky diode-type hydrogen sensor with pyramid-like Pd nanostructures

Hydrogen sensing characteristics of a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by sensitization, activation, and electroless plating (EP) approaches

Implementation of a High-Performance GaN-Based Light-Emitting Diode Grown on a Nanocomb-Shaped Patterned Sapphire Substrate

Enhanced Performance of a GaN-Based LED Prepared by an Anodized Aluminum Oxide-Nanoporous Pattern Sapphire Substrate

Hydrogen sensing characteristics of Pd/SiO2-nanoparticles (NPs)/AlGaN metal-oxide-semiconductor (MOS) diodes

Comprehensive study of hydrogen sensing phenomena of an electroless plating (EP)-based Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)

Effects of the Use of an Aluminum Reflecting and an SiO2 Insulating Layers (RIL) on the Performance of a GaN-Based Light-Emitting Diode With the Naturally Textured p-GaN Surface

Improved performance of GaN-based light-emitting diodes by using short-period superlattice structures

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