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Surface cleaning process for plasma-etched SiC wafer

Applied physics. A, Materials science & processing, 2020-08, Vol.126 (8), Article 617

2020

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Growth of high-quality epitaxy of GaAs on Si with engineered Ge buffer using MOCVD

Journal of materials science. Materials in electronics, 2021-03, Vol.32 (5), p.6425-6437

2021

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State of the Art and Future Perspectives in Advanced CMOS Technology

Nanomaterials (Basel, Switzerland), 2020-08, Vol.10 (8), p.1555

2020

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Miniaturization of CMOS

Micromachines (Basel), 2019-04, Vol.10 (5), p.293

2019

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Improved performance of MoS2 FET by in situ NH3 doping in ALD Al2O3 dielectric

Chinese physics B, 2022-07, Vol.31 (7), p.634-638

2022

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The optimization of contact interface between metal/MoS2 FETs by oxygen plasma treatment

Journal of materials science. Materials in electronics, 2020-06, Vol.31 (12), p.9660-9665

2020

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Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment

Nanomaterials (Basel, Switzerland), 2021-12, Vol.11 (12), p.3311

2021

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High carrier mobility in suspended-channel graphene field effect transistors

Applied physics letters, 2013-11, Vol.103 (19)

2013

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Integration of silicon nitride waveguide in Ge-on-insulator substrates for monolithic solutions in optoelectronics

Journal of materials science. Materials in electronics, 2021-03, Vol.32 (5), p.6133-6140

2021

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Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon

Nanomaterials (Basel, Switzerland), 2022-08, Vol.12 (15), p.2704

2022

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Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

Micromachines (Basel), 2022-09, Vol.13 (10), p.1579

2022

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Inverted process for graphene integrated circuits fabrication

Nanoscale, 2014-06, Vol.6 (11), p.5826-5830

2014

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High-Quality Recrystallization of Amorphous Silicon on Si (100) Induced via Laser Annealing at the Nanoscale

Nanomaterials (Basel, Switzerland), 2023-06, Vol.13 (12), p.1867

2023

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Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing

Nanomaterials (Basel, Switzerland), 2023-06, Vol.13 (11), p.1786

2023

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Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si0.45Ge0.55, Ge Gate-All-Around NSFET for 5 nm Technology Node

IEEE journal of the Electron Devices Society, 2018, Vol.6, p.841-848

2018

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Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD

Nanomaterials (Basel, Switzerland), 2021-04, Vol.11 (4), p.928

2021

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Novel 10-nm Gate Length MoS2 Transistor Fabricated on Si Fin Substrate

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.483-488

2019

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Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs

Nanomaterials (Basel, Switzerland), 2022-04, Vol.12 (9), p.1403

2022

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CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology

Nanomaterials (Basel, Switzerland), 2024-05, Vol.14 (10), p.837

2024

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Strain Modulation of Selectively and/or Globally Grown Ge Layers

Nanomaterials (Basel, Switzerland), 2021-05, Vol.11 (6), p.1421

2021

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Research on the Comprehensive Evaluation Method for the Automatic Recognition of Raman Spectrum under Multidimensional Constraint

Analytical chemistry (Washington), 2022-05, Vol.94 (21), p.7628-7636

2022

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Model Parameter Self-Correcting Fuzzy Proportional-Integral-Derivative Adaptive Control of the Integration Time of Raman Spectrometers

IEEE transactions on instrumentation and measurement, 2023, Vol.72, p.1-10

2023

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IEEE_Xplore

The linear impact of visual working memory load on visual awareness: Evidence from motion-induced blindness

Journal of vision (Charlottesville, Va.), 2022-12, Vol.22 (14), p.3411

2022

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Near-ideal subthreshold swing MoS2 back-gate transistors with an optimized ultrathin HfO2 dielectric layer

Nanotechnology, 2019-03, Vol.30 (9), p.095202-095202

2019

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Effects of blending methane, propane, and propylene on soot evolution in ethylene diffusion flames based on optical diagnostics

Fuel (Guildford), 2023-02, Vol.334, p.126317, Article 126317

2023

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Surface cleaning process for plasma-etched SiC wafer

Growth of high-quality epitaxy of GaAs on Si with engineered Ge buffer using MOCVD

State of the Art and Future Perspectives in Advanced CMOS Technology

Miniaturization of CMOS

Improved performance of MoS2 FET by in situ NH3 doping in ALD Al2O3 dielectric

The optimization of contact interface between metal/MoS2 FETs by oxygen plasma treatment

Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment

High carrier mobility in suspended-channel graphene field effect transistors

Integration of silicon nitride waveguide in Ge-on-insulator substrates for monolithic solutions in optoelectronics

Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

Inverted process for graphene integrated circuits fabrication

High-Quality Recrystallization of Amorphous Silicon on Si (100) Induced via Laser Annealing at the Nanoscale

Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing

Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si0.45Ge0.55, Ge Gate-All-Around NSFET for 5 nm Technology Node

Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD

Novel 10-nm Gate Length MoS2 Transistor Fabricated on Si Fin Substrate

Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs

CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology

Strain Modulation of Selectively and/or Globally Grown Ge Layers

Research on the Comprehensive Evaluation Method for the Automatic Recognition of Raman Spectrum under Multidimensional Constraint

Model Parameter Self-Correcting Fuzzy Proportional-Integral-Derivative Adaptive Control of the Integration Time of Raman Spectrometers

The linear impact of visual working memory load on visual awareness: Evidence from motion-induced blindness

Near-ideal subthreshold swing MoS2 back-gate transistors with an optimized ultrathin HfO2 dielectric layer

Effects of blending methane, propane, and propylene on soot evolution in ethylene diffusion flames based on optical diagnostics

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