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Performance Improvement of VLC System Using GaN-Based LEDs With Strain Relief Layers

IEEE photonics technology letters, 2016-05, Vol.28 (9), p.1038-1041

2016

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Valence subband coupling effect on polarization of spontaneous emissions from Al-rich AlGaN/AlN quantum wells

Optics express, 2012-12, Vol.20 (25), p.27384-27392

2012

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Synthesis of GaN Crystals by Nitrogen Pressure-Controlled Recrystallization Technique in Na Alloy Melt

Crystals (Basel), 2021-09, Vol.11 (9), p.1058

2021

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Performance Improvement of InGaN Red Light‐Emitting Diode by Using V‐Pits Layer and Step‐Graded GaN Barrier

Physica status solidi. A, Applications and materials science, 2023-07, Vol.220 (13), p.n/a

2023

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High quality GaN epilayers grown on carbon nanotube patterned sapphire substrate by metal-organic vapor phase epitaxy

CrystEngComm, 2012-01, Vol.14 (14), p.4728-4731

2012

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Improvement of electrostatic discharge characteristics of InGaN GaN MQWs light-emitting diodes by inserting an n+-InGaN electron injection layer and a p-InGaN GaN hole injection layer

Semiconductor science and technology, 2012-06, Vol.27 (6), p.65008

2012

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Analyses of surface temperatures on patterned sapphire substrate for the growth of GaN with metal organic chemical vapor deposition

Applied surface science, 2011-07, Vol.257 (18), p.8062-8066

2011

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High sensitivity fiber sensor for measurement of Cd2+ concentration in aqueous solution based on reflective Mach-Zehnder interference with temperature calibration

Optics express, 2019-10, Vol.27 (22), p.32621-32629

2019

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A novel blue-light excitable Pr3+ doped (Sr,Ba)LaMgTaO6 phosphor for plant growth lighting

Journal of rare earths, 2023-05, Vol.41 (5), p.666-672

2023

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A novel far-red emitting phosphor activated Ba2LuTaO6:Mn4+: Crystal structure, optical properties and application in plant growth lighting

Materials research bulletin, 2021-08, Vol.140, p.111301, Article 111301

2021

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Improvement of Radiative Recombination Rate and Efficiency Droop of InGaN Light Emitting Diodes with In‐Component‐Graded InGaN Barrier

Physica status solidi. A, Applications and materials science, 2021-10, Vol.218 (20), p.n/a

2021

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Threading dislocations reduction of GaN-on-Si by introducing AlN/3D-GaN with SiN interlayer for photodetectors

Materials science in semiconductor processing, 2024-03, Vol.172, p.108089, Article 108089

2024

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The Effect of Nanometer‐Scale V‐Pit Layer on the Carrier Recombination Mechanisms and Efficiency Droop of GaN‐Based Green Light‐Emitting Diodes

Physica status solidi. A, Applications and materials science, 2021-09, Vol.218 (17), p.n/a

2021

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Strain effect on polarized optical properties of c -plane GaN and m -plane GaN

Physica status solidi. A, Applications and materials science, 2009-02, Vol.206 (2), p.206-210

2009

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Multifunctional Pr3+ single doped CaLaMgTaO6: Crystal structure, thermal behavior and applications

Journal of alloys and compounds, 2021-10, Vol.879, p.160424, Article 160424

2021

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High sensitivity fiber sensor for measurement of Cd 2+ concentration in aqueous solution based on reflective Mach-Zehnder interference with temperature calibration

Optics express, 2019-10, Vol.27 (22), p.32621

2019

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Performance improvement of InGaN LEDs by using strain compensated last quantum barrier and electron blocking layer

Optik (Stuttgart), 2021-12, Vol.248, p.168216, Article 168216

2021

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Generating green and yellow lines in Y6Si3O9N4:Ce3+,Tb3+/Dy3+ oxynitrides phosphor

Journal of luminescence, 2019-09, Vol.213, p.297-303

2019

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Structural, tunable emission and energy transfer of Ca9In(PO4)7:Ce3+,Tb3+/Dy3+ phosphors

Materials chemistry and physics, 2020-01, Vol.240, p.122239, Article 122239

2020

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Thermally stable radiative recombination centers within trench structures of red multi-quantum wells

Journal of physics. D, Applied physics, 2024-06, Vol.57 (25), p.25

2024

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Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs

Optics express, 2013-04, Vol.21 (7), p.8444-8449

2013

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Effect of grain coalescence on dislocation and stress in GaN films grown on nanoscale patterned sapphire substrates

CrystEngComm, 2024-01, Vol.26 (5), p.62-63

2024

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Efficient InGaN‐Based Red Light‐Emitting Diodes by Modulating Trench Defects

Advanced functional materials, 2024-06, Vol.34 (25), p.n/a

2024

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Low-Defect-Density Aluminum Nitride (AlN) Thin Films Realized by Zigzag Macrostep-Induced Dislocation Redirection

Crystal growth & design, 2021-06, Vol.21 (6), p.3394-3400

2021

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Fast growth of crack-free thick AlN film on sputtered AlN/sapphire by introducing high-density nano-voids

Journal of physics. D, Applied physics, 2020-09, Vol.53 (40), p.405303

2020

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Performance Improvement of VLC System Using GaN-Based LEDs With Strain Relief Layers

Valence subband coupling effect on polarization of spontaneous emissions from Al-rich AlGaN/AlN quantum wells

Synthesis of GaN Crystals by Nitrogen Pressure-Controlled Recrystallization Technique in Na Alloy Melt

Performance Improvement of InGaN Red Light‐Emitting Diode by Using V‐Pits Layer and Step‐Graded GaN Barrier

High quality GaN epilayers grown on carbon nanotube patterned sapphire substrate by metal-organic vapor phase epitaxy

Improvement of electrostatic discharge characteristics of InGaN GaN MQWs light-emitting diodes by inserting an n+-InGaN electron injection layer and a p-InGaN GaN hole injection layer

Analyses of surface temperatures on patterned sapphire substrate for the growth of GaN with metal organic chemical vapor deposition

High sensitivity fiber sensor for measurement of Cd2+ concentration in aqueous solution based on reflective Mach-Zehnder interference with temperature calibration

A novel blue-light excitable Pr3+ doped (Sr,Ba)LaMgTaO6 phosphor for plant growth lighting

A novel far-red emitting phosphor activated Ba2LuTaO6:Mn4+: Crystal structure, optical properties and application in plant growth lighting

Improvement of Radiative Recombination Rate and Efficiency Droop of InGaN Light Emitting Diodes with In‐Component‐Graded InGaN Barrier

Threading dislocations reduction of GaN-on-Si by introducing AlN/3D-GaN with SiN interlayer for photodetectors

The Effect of Nanometer‐Scale V‐Pit Layer on the Carrier Recombination Mechanisms and Efficiency Droop of GaN‐Based Green Light‐Emitting Diodes

Strain effect on polarized optical properties of c -plane GaN and m -plane GaN

Multifunctional Pr3+ single doped CaLaMgTaO6: Crystal structure, thermal behavior and applications

High sensitivity fiber sensor for measurement of Cd 2+ concentration in aqueous solution based on reflective Mach-Zehnder interference with temperature calibration

Performance improvement of InGaN LEDs by using strain compensated last quantum barrier and electron blocking layer

Generating green and yellow lines in Y6Si3O9N4:Ce3+,Tb3+/Dy3+ oxynitrides phosphor

Structural, tunable emission and energy transfer of Ca9In(PO4)7:Ce3+,Tb3+/Dy3+ phosphors

Thermally stable radiative recombination centers within trench structures of red multi-quantum wells

Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs

Effect of grain coalescence on dislocation and stress in GaN films grown on nanoscale patterned sapphire substrates

Efficient InGaN‐Based Red Light‐Emitting Diodes by Modulating Trench Defects

Low-Defect-Density Aluminum Nitride (AlN) Thin Films Realized by Zigzag Macrostep-Induced Dislocation Redirection

Fast growth of crack-free thick AlN film on sputtered AlN/sapphire by introducing high-density nano-voids

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