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A review of recent progress in lens-free imaging and sensing

Biosensors & bioelectronics, 2017-02, Vol.88, p.130-143

2017

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On the feasibility of nanoscale triple-gate CMOS transistors

IEEE transactions on electron devices, 2005-06, Vol.52 (6), p.1159-1164

2005

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Modeling and Significance of Fringe Capacitance in Nonclassical CMOS Devices With Gate-Source/Drain Underlap

IEEE transactions on electron devices, 2006-09, Vol.53 (9), p.2143-2150

2006

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Surface-Potential-Based Analytical Model of Low-Frequency Noise for Planar-Type Tunnel Field-Effect Transistors

IEEE transactions on electron devices, 2021-08, Vol.68 (8), p.4051-4056

2021

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Explicit Analytical Current-Voltage Model for Double-Gate Junctionless Transistors

IEEE transactions on electron devices, 2015-01, Vol.62 (1), p.171-177

2015

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Highly Manufacturable Double-Gate FinFET With Gate-Source/Drain Underlap

IEEE transactions on electron devices, 2007-06, Vol.54 (6), p.1464-1470

2007

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Analytical Model of the Parasitic Bipolar Junction Transistor in Low-Doped Double-Gate FinFETs for Pass-Gate Circuits

IEEE transactions on electron devices, 2016-10, Vol.63 (10), p.3864-3868

2016

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Physics-Based Compact Model of Parasitic Bipolar Transistor for Single-Event Transients in FinFETs

IEEE transactions on nuclear science, 2018-03, Vol.65 (3), p.866-870

2018

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Flexible glucose sensor using CVD-grown graphene-based field effect transistor

Biosensors & bioelectronics, 2012-08, Vol.37 (1), p.82-87

2012

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Bias dependent physics-based model of low-frequency noise for nanowire type gate-all-around MOSFETs

Solid-state electronics, 2022-03, Vol.189, p.108223, Article 108223

2022

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Design consideration of ferroelectric field-effect-transistors with metal–ferroelectric–metal capacitor for ternary content addressable memory

Solid-state electronics, 2023-08, Vol.206, p.108674, Article 108674

2023

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Dye-Sensitized Tandem Solar Cells with Extremely High Open-Circuit Voltage Using Co(II)/Co(III) Electrolyte

Israel journal of chemistry, 2015-09, Vol.55 (9), p.1002-1010

2015

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Influence of Ionizing Radiation on Short-Channel Effects in Low-Doped Multi-Gate MOSFETs

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.3021-3026

2012

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Physics-based compact model of transient leakage current caused by parasitic bipolar junction transistor in gate-all-around MOSFETs

Solid-state electronics, 2020-02, Vol.164, p.107739, Article 107739

2020

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Effects of plasma treatment on the electrical reliability of multilayer MoS2 field-effect transistors

Thin solid films, 2017-09, Vol.637, p.32-36

2017

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Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates

IEEE electron device letters, 2007-11, Vol.28 (11), p.1044-1046

2007

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Etching Characteristics and Mechanisms of MoS2 2D Crystals in O2/Ar Inductively Coupled Plasma

Journal of nanoscience and nanotechnology, 2016-11, Vol.16 (11), p.11201-11209

2016

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Lens-free shadow image based high-throughput continuous cell monitoring technique

Biosensors & bioelectronics, 2012-10, Vol.38 (1), p.126-131

2012

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Experimental optimization of post metal annealing on fully depleted-silicon on insulator tunneling field effect transistor

Japanese Journal of Applied Physics, 2020-07, Vol.59 (SM), p.SMMB03

2020

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A Simplified Superior Floating-Body/Gate DRAM Cell

IEEE electron device letters, 2009-03, Vol.30 (3), p.282-284

2009

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LED and CMOS image sensor based hemoglobin concentration measurement technique

Sensors and actuators. B, Chemical, 2011-09, Vol.157 (1), p.103-109

2011

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Triarylamine-based dual-function coadsorbents with extended π-conjugation aryl linkers for organic dye-sensitized solar cells

Organic electronics, 2014-11, Vol.15 (11), p.3316-3326

2014

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Erratum: "Mitigation of Complementary Metal--Oxide--Semiconductor Variability with Metal Gate Metal--Oxide--Semiconductor Field-Effect Transistors"

Japanese Journal of Applied Physics, 2011-11, Vol.50 (11), p.119201-119201-1

2011

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Dual work function high-k/Metal Gate CMOS FinFETs

ESSDERC 2007 - 37th European Solid State Device Research Conference, 2007, p.207-209

2007

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Body-contacted SOI MOSFET structure with fully bulk CMOS compatible layout and process

IEEE electron device letters, 1997-03, Vol.18 (3), p.102-104

1997

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A review of recent progress in lens-free imaging and sensing

On the feasibility of nanoscale triple-gate CMOS transistors

Modeling and Significance of Fringe Capacitance in Nonclassical CMOS Devices With Gate-Source/Drain Underlap

Surface-Potential-Based Analytical Model of Low-Frequency Noise for Planar-Type Tunnel Field-Effect Transistors

Explicit Analytical Current-Voltage Model for Double-Gate Junctionless Transistors

Highly Manufacturable Double-Gate FinFET With Gate-Source/Drain Underlap

Analytical Model of the Parasitic Bipolar Junction Transistor in Low-Doped Double-Gate FinFETs for Pass-Gate Circuits

Physics-Based Compact Model of Parasitic Bipolar Transistor for Single-Event Transients in FinFETs

Flexible glucose sensor using CVD-grown graphene-based field effect transistor

Bias dependent physics-based model of low-frequency noise for nanowire type gate-all-around MOSFETs

Design consideration of ferroelectric field-effect-transistors with metal–ferroelectric–metal capacitor for ternary content addressable memory

Dye-Sensitized Tandem Solar Cells with Extremely High Open-Circuit Voltage Using Co(II)/Co(III) Electrolyte

Influence of Ionizing Radiation on Short-Channel Effects in Low-Doped Multi-Gate MOSFETs

Physics-based compact model of transient leakage current caused by parasitic bipolar junction transistor in gate-all-around MOSFETs

Effects of plasma treatment on the electrical reliability of multilayer MoS2 field-effect transistors

Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates

Etching Characteristics and Mechanisms of MoS2 2D Crystals in O2/Ar Inductively Coupled Plasma

Lens-free shadow image based high-throughput continuous cell monitoring technique

Experimental optimization of post metal annealing on fully depleted-silicon on insulator tunneling field effect transistor

A Simplified Superior Floating-Body/Gate DRAM Cell

LED and CMOS image sensor based hemoglobin concentration measurement technique

Triarylamine-based dual-function coadsorbents with extended π-conjugation aryl linkers for organic dye-sensitized solar cells

Erratum: "Mitigation of Complementary Metal--Oxide--Semiconductor Variability with Metal Gate Metal--Oxide--Semiconductor Field-Effect Transistors"

Dual work function high-k/Metal Gate CMOS FinFETs

Body-contacted SOI MOSFET structure with fully bulk CMOS compatible layout and process

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