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Sub-50 nm Terahertz In0.8Ga0.2As Quantum-Well High-Electron-Mobility Transistors for 6G Applications

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.2081-2089

2023

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Impact of the Source-to-Drain Spacing on the DC and RF Characteristics of InGaAs/InAlAs High-Electron Mobility Transistors

IEEE electron device letters, 2018-12, Vol.39 (12), p.1844-1847

2018

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Record Effective Mobility Obtained From In0.53Ga0.47As/In0.52Al0.48As Quantum-Well MOSFETs on 300-mm Si Substrate

IEEE electron device letters, 2017-06, Vol.38 (6), p.724-727

2017

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Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts

Electronics (Basel), 2022-09, Vol.11 (17), p.2744

2022

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Physical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors

AIP advances, 2018-07, Vol.8 (7), p.075203-075203-7

2018

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Sub-30-nm In0.8Ga0.2As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.2010-2016

2021

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Surface Sensitive Analysis Device using Model Membrane and Challenges for Biosensor-chip

BioChip Journal, 2020, 14(1), , pp.110-123

2020

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L g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f T and f max in excess of 700 GHz

Applied physics express, 2019-05, Vol.12 (5), p.54006

2019

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Vertical homo-junction In0.53Ga0.47As tunneling field-effect transistors with minimum subthreshold swing of 52 mV/decade

Solid-state electronics, 2022-11, Vol.197, Article 108447

2022

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Vertical InGaAs tunnel-field-effect transistors by an electro-plating fin formation technique

Solid-state electronics, 2020-02, Vol.164, p.107681, Article 107681

2020

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An Immune-Responsive Serpin Regulates the Melanization Cascade in Drosophila

Developmental cell, 2002-10, Vol.3 (4), p.581-592

2002

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Stepper-based Lg = 0.5 μm In0.52Al0.48As/In0.7Ga0.3As PHEMTs on a 3-inch InP substrate with record product of fT and Lg

Solid-state electronics, 2018-09, Vol.147, p.58-62

2018

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Performance and carrier transport analysis of In0.7Ga0.3As quantum-well MOSFETs with Al2O3/HfO2 gate stack

Solid-state electronics, 2016-09, Vol.123, p.63-67

2016

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A New Easter-type Serine Protease Cleaves a Masquerade-like Protein during Prophenoloxidase Activation in Holotrichia diomphalia Larvae

The Journal of biological chemistry, 2002-10, Vol.277 (42), p.39999-40004

2002

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Linear multi-degree of freedom variable stiffness actuator for robotic assembly tasks

Microsystem technologies : sensors, actuators, systems integration, 2023-11, Vol.29 (11), p.1643-1649

2023

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Three-degree-of-freedom switchable variable stiffness mechanism for minimization of repulsive force in robot assembly tasks

International journal of advanced manufacturing technology, 2024-09, Vol.134 (1-2), p.591-604

2024

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Constant Voltage Stress (CVS) and Hot Carrier Injection (HCI) Degradations of Vertical Double-date InGaAs TFETs for Bio Sensor Applications

Senseo haghoeji, 2022-01, Vol.31 (1), p.41-44

2022

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In Vitro Membrane Platform for the Visualization of Water Impermeability across the Liquid-Ordered Phase under Hypertonic Conditions

Journal of the American Chemical Society, 2022-12, Vol.144 (48), p.21887-21896

2022

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Temperature-dependent DC Characteristics of Homojunction InGaAs vertical Fin TFETs

Senseo haghoeji, 2020-07, Vol.29 (4), p.275-278

2020

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On the universality of drain-induced-barrier-lowering in field-effect transistors

2022 International Electron Devices Meeting (IEDM), 2022, p.8.3.1-8.3.4

2022

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Sub-50 nm Terahertz In 0.8 Ga 0.2 As Quantum-Well High-Electron-Mobility Transistors for 6G Applications

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.2081-2089

2023

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Central spot formed in dried coffee-water-mixture droplets: Inverse coffee-ring effect

Current Applied Physics, 2018, 18(4), , pp.477-483

2018

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Vertical homo-junction In Ga As tunneling field-effect transistors with minimum subthreshold swing of 52 mV/decade

Solid-state electronics, 2022-11, Vol.197, p.108447, Article 108447

2022

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Sub-30-nm In 0.8 Ga 0.2 As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.2010-2016

2021

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{L}_{{g}} = {87}$ nm InAlAs/InGaAs High-Electron- Mobility Transistors With a g m_max of 3 S/mm and $f_{{T}}$ of 559 GHz

IEEE electron device letters, 2018-11, Vol.39 (11), p.1640-1643

2018

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Sub-50 nm Terahertz In0.8Ga0.2As Quantum-Well High-Electron-Mobility Transistors for 6G Applications

Impact of the Source-to-Drain Spacing on the DC and RF Characteristics of InGaAs/InAlAs High-Electron Mobility Transistors

Record Effective Mobility Obtained From In0.53Ga0.47As/In0.52Al0.48As Quantum-Well MOSFETs on 300-mm Si Substrate

Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts

Physical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors

Sub-30-nm In0.8Ga0.2As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics

Surface Sensitive Analysis Device using Model Membrane and Challenges for Biosensor-chip

L g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f T and f max in excess of 700 GHz

Vertical homo-junction In0.53Ga0.47As tunneling field-effect transistors with minimum subthreshold swing of 52 mV/decade

Vertical InGaAs tunnel-field-effect transistors by an electro-plating fin formation technique

An Immune-Responsive Serpin Regulates the Melanization Cascade in Drosophila

Stepper-based Lg = 0.5 μm In0.52Al0.48As/In0.7Ga0.3As PHEMTs on a 3-inch InP substrate with record product of fT and Lg

Performance and carrier transport analysis of In0.7Ga0.3As quantum-well MOSFETs with Al2O3/HfO2 gate stack

A New Easter-type Serine Protease Cleaves a Masquerade-like Protein during Prophenoloxidase Activation in Holotrichia diomphalia Larvae

Linear multi-degree of freedom variable stiffness actuator for robotic assembly tasks

Three-degree-of-freedom switchable variable stiffness mechanism for minimization of repulsive force in robot assembly tasks

Constant Voltage Stress (CVS) and Hot Carrier Injection (HCI) Degradations of Vertical Double-date InGaAs TFETs for Bio Sensor Applications

In Vitro Membrane Platform for the Visualization of Water Impermeability across the Liquid-Ordered Phase under Hypertonic Conditions

Temperature-dependent DC Characteristics of Homojunction InGaAs vertical Fin TFETs

On the universality of drain-induced-barrier-lowering in field-effect transistors

Sub-50 nm Terahertz In 0.8 Ga 0.2 As Quantum-Well High-Electron-Mobility Transistors for 6G Applications

Central spot formed in dried coffee-water-mixture droplets: Inverse coffee-ring effect

Vertical homo-junction In Ga As tunneling field-effect transistors with minimum subthreshold swing of 52 mV/decade

Sub-30-nm In 0.8 Ga 0.2 As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics

{L}_{{g}} = {87}$ nm InAlAs/InGaAs High-Electron- Mobility Transistors With a g m_max of 3 S/mm and $f_{{T}}$ of 559 GHz

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