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Negative Hall coefficient in band conduction region in heavily Al-doped 4H-SiC

Journal of applied physics, 2023-09, Vol.134 (11)

2023

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Breaking the Theoretical Limit of 6.5 kV-Class 4H-SiC Super-Junction (SJ) MOSFETs by Trench-Filling Epitaxial Growth

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019, p.39-42

2019

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Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC

Japanese Journal of Applied Physics, 2020-05, Vol.59 (5), p.51004

2020

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Simple physical model for the sign of the Hall coefficient in variable-range hopping conduction in heavily Al-doped p-type 4H-SiC

Japanese Journal of Applied Physics, 2021-03, Vol.60 (3), p.31008

2021

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Anomalous Temperature Dependence of the Hall Coefficient of Heavily Al-Doped 4H-SiC Epilayers in the Band Conduction Region

Materials science forum, 2020-07, Vol.1004, p.215-223

2020

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Gibbs-Thomson effect on aluminum doping during trench-filling epitaxial growth of 4H-SiC

Japanese Journal of Applied Physics, 2019-05, Vol.58 (5), p.51009

2019

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Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC

Materials science forum, 2020-07, Vol.1004, p.224-230

2020

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Strong impact of slight trench direction misalignment from on deep trench filling epitaxy for SiC super-junction devices

Japanese Journal of Applied Physics, 2017-04, Vol.56 (4S), p.4-04CR05

2017

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Transition of conduction mechanism from band to variable-range hopping conduction due to Al doping in heavily Al-doped 4H-SiC epilayers

Japanese Journal of Applied Physics, 2019-09, Vol.58 (9), p.98004

2019

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Relationship between Temperature Dependencies of Resistivity and Hall Coefficient in Heavily Al-Doped 4H-SiC Epilayers

Materials science forum, 2019-07, Vol.963, p.324-327

2019

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Numerical analysis of the Gibbs–Thomson effect on trench-filling epitaxial growth of 4H-SiC

Applied physics express, 2016-03, Vol.9 (3), p.35601

2016

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Filling 4H-SiC trench towards selective epitaxial growth by adding HCl to CVD process

Applied physics express, 2015-06, Vol.8 (6), p.65502

2015

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Dependence of conduction mechanisms in heavily Al-doped 4H-SiC epilayers on Al concentration

Applied physics express, 2018-10, Vol.11 (10), p.101302

2018

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The growth of low resistivity, heavily Al-doped 4H–SiC thick epilayers by hot-wall chemical vapor deposition

Journal of crystal growth, 2013-10, Vol.380, p.85-92

2013

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Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC

Materials science forum, 2018-06, Vol.924, p.188-191

2018

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Topography Simulation of 4H-SiC-Chemical-Vapor-Deposition Trench Filling Including an OrientationDependent Surface Free Energy

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2018, p.331-335

2018

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Analysis of trench-filling epitaxial growth of 4H-SiC based on continuous fluid approximation including Gibbs-Thomson effect

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Hopping conduction range of heavily Al-doped 4H-SiC thick epilayers grown by CVD

Applied physics express, 2015-12, Vol.8 (12), p.121302

2015

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Influence of growth pressure on filling 4H-SiC trenches by CVD method

Japanese Journal of Applied Physics, 2016-01, Vol.55 (1S), p.1

2016

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Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition

Materials science forum, 2013-01, Vol.740-742, p.181-184

2013

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Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers

Materials science forum, 2014-02, Vol.778-780, p.151-154

2014

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Suppression of Al Memory-Effect on Growing 4H-SiC Epilayers by Hot-Wall Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2013-04, Vol.52 (4), p.04CP04-04CP04-6

2013

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Exceptionally High‑g lum Circularly Polarized Lasers Empowered by Strong 2D-Chiroptical Response in a Host–Guest Supramolecular Microcrystal

Journal of the American Chemical Society, 2024-08, Vol.146 (32), p.22583-22589

2024

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Exceptionally High-glum Circularly Polarized Lasers Empowered by Strong 2D-Chiroptical Response in a Host-Guest Supramolecular Microcrystal

Journal of the American Chemical Society, 2024-08, Vol.146 (32), p.22583

2024

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2D Metal‐Organic Complex Luminescent Crystals

Advanced functional materials, 2021-11, Vol.31 (45), p.n/a

2021

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Negative Hall coefficient in band conduction region in heavily Al-doped 4H-SiC

Breaking the Theoretical Limit of 6.5 kV-Class 4H-SiC Super-Junction (SJ) MOSFETs by Trench-Filling Epitaxial Growth

Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC

Simple physical model for the sign of the Hall coefficient in variable-range hopping conduction in heavily Al-doped p-type 4H-SiC

Anomalous Temperature Dependence of the Hall Coefficient of Heavily Al-Doped 4H-SiC Epilayers in the Band Conduction Region

Gibbs-Thomson effect on aluminum doping during trench-filling epitaxial growth of 4H-SiC

Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC

Strong impact of slight trench direction misalignment from on deep trench filling epitaxy for SiC super-junction devices

Transition of conduction mechanism from band to variable-range hopping conduction due to Al doping in heavily Al-doped 4H-SiC epilayers

Relationship between Temperature Dependencies of Resistivity and Hall Coefficient in Heavily Al-Doped 4H-SiC Epilayers

Numerical analysis of the Gibbs–Thomson effect on trench-filling epitaxial growth of 4H-SiC

Filling 4H-SiC trench towards selective epitaxial growth by adding HCl to CVD process

Dependence of conduction mechanisms in heavily Al-doped 4H-SiC epilayers on Al concentration

The growth of low resistivity, heavily Al-doped 4H–SiC thick epilayers by hot-wall chemical vapor deposition

Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC

Topography Simulation of 4H-SiC-Chemical-Vapor-Deposition Trench Filling Including an OrientationDependent Surface Free Energy

Analysis of trench-filling epitaxial growth of 4H-SiC based on continuous fluid approximation including Gibbs-Thomson effect

Hopping conduction range of heavily Al-doped 4H-SiC thick epilayers grown by CVD

Influence of growth pressure on filling 4H-SiC trenches by CVD method

Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition

Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers

Suppression of Al Memory-Effect on Growing 4H-SiC Epilayers by Hot-Wall Chemical Vapor Deposition

Exceptionally High‑g lum Circularly Polarized Lasers Empowered by Strong 2D-Chiroptical Response in a Host–Guest Supramolecular Microcrystal

Exceptionally High-glum Circularly Polarized Lasers Empowered by Strong 2D-Chiroptical Response in a Host-Guest Supramolecular Microcrystal

2D Metal‐Organic Complex Luminescent Crystals

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