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Low-Temperature Geiger-Mode Characterization of a Gallium Nitride p-i-N Avalanche Photodiode

IEEE journal of quantum electronics, 2023-06, Vol.59 (3), p.1-8

2023

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Temperature-Dependent Leakage Current Characteristics of Homojunction GaN p-i-n Rectifiers Using Ion-Implantation Isolation

IEEE transactions on electron devices, 2019-10, Vol.66 (10), p.4273-4278

2019

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p-i-p-i-n Separate Absorption and Multiplication Ultraviolet Avalanche Photodiodes

IEEE photonics technology letters, 2018-01, Vol.30 (2), p.181-184

2018

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Rethinking phonons: The issue of disorder

npj computational materials, 2017-11, Vol.3 (1), p.1-8, Article 49

2017

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AlxGa1−xN Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than 10

IEEE photonics technology letters, 2015-03, Vol.27 (6), p.642-645

2015

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Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers

Applied physics letters, 2012-10, Vol.101 (16)

2012

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Uniform and Reliable GaN p-i-n Ultraviolet Avalanche Photodiode Arrays

IEEE photonics technology letters, 2016-10, Vol.28 (19), p.2015-2018

2016

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Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-03, Vol.9 (7), p.2243-2251

2021

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Structural and Electrical Characterization of 2" Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production

Materials, 2019-06, Vol.12 (12), p.1925

2019

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Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions

Journal of crystal growth, 2014-02, Vol.388, p.143-149

2014

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Temperature-Dependent Characteristics of GaN Homojunction Rectifiers

IEEE transactions on electron devices, 2015-08, Vol.62 (8), p.2679-2683

2015

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Comparison of AlGaN p–i–n ultraviolet avalanche photodiodes grown on free-standing GaN and sapphire substrates

Applied physics express, 2015-12, Vol.8 (12), p.122202

2015

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Effect of Group-III precursors on unintentional gallium incorporation during epitaxial growth of InAlN layers by metalorganic chemical vapor deposition

Journal of applied physics, 2015-09, Vol.118 (12)

2015

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Effect of lattice-matched InAlGaN electron-blocking layer on hole transport and distribution in InGaN/GaN multiple quantum wells of visible light-emitting diodes

Physica status solidi. A, Applications and materials science, 2016-05, Vol.213 (5), p.1296-1301

2016

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III-N High-Power Bipolar Transistors

ECS transactions, 2013-08, Vol.58 (4), p.261-267

2013

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GaN/InGaN avalanche phototransistors

Applied physics express, 2015-03, Vol.8 (3), p.32101

2015

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Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation

Applied physics letters, 2014-04, Vol.104 (14)

2014

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Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice InAs/InAs1-xSbx

Physical review applied, 2017-09, Vol.8 (3)

2017

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Improved Hole Transport by \hbox Layer in Multiple Quantum Wells of Visible LEDs

IEEE photonics technology letters, 2013-09, Vol.25 (18), p.1789-1792

2013

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Growth and characterization of III-N ultraviolet lasers and avalanche photodiodes by MOCVD

2017 Conference on Lasers and Electro-Optics (CLEO), 2017, p.1-2

2017

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Multichip on Aluminum Metal Plate Technology for High Power LED Packaging

测试科学与仪器, 2010, Vol.1 (3), p.297-299

Choong-mo NAM Mi-hee JI

2010

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Structural and Electrical Characterization of 2” Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production

Materials, 2019-06, Vol.12 (12)

2019

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Al x Ga 1− x N Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than $10^{5}

IEEE photonics technology letters, 2015-03, Vol.27 (6), p.642-645

2015

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Al x Ga1- x N Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than [Formula Omitted]

IEEE photonics technology letters, 2015-03, Vol.27 (6), p.642

2015

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Bipolar III-N high-power electronic devices

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, 2013, p.96-99

2013

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Low-Temperature Geiger-Mode Characterization of a Gallium Nitride p-i-N Avalanche Photodiode

Temperature-Dependent Leakage Current Characteristics of Homojunction GaN p-i-n Rectifiers Using Ion-Implantation Isolation

p-i-p-i-n Separate Absorption and Multiplication Ultraviolet Avalanche Photodiodes

Rethinking phonons: The issue of disorder

AlxGa1−xN Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than 10

Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers

Uniform and Reliable GaN p-i-n Ultraviolet Avalanche Photodiode Arrays

Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape

Structural and Electrical Characterization of 2" Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production

Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions

Temperature-Dependent Characteristics of GaN Homojunction Rectifiers

Comparison of AlGaN p–i–n ultraviolet avalanche photodiodes grown on free-standing GaN and sapphire substrates

Effect of Group-III precursors on unintentional gallium incorporation during epitaxial growth of InAlN layers by metalorganic chemical vapor deposition

Effect of lattice-matched InAlGaN electron-blocking layer on hole transport and distribution in InGaN/GaN multiple quantum wells of visible light-emitting diodes

III-N High-Power Bipolar Transistors

GaN/InGaN avalanche phototransistors

Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation

Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice InAs/InAs1-xSbx

Improved Hole Transport by \hbox Layer in Multiple Quantum Wells of Visible LEDs

Growth and characterization of III-N ultraviolet lasers and avalanche photodiodes by MOCVD

Multichip on Aluminum Metal Plate Technology for High Power LED Packaging

Structural and Electrical Characterization of 2” Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production

Al x Ga 1− x N Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than $10^{5}

Al x Ga1- x N Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than [Formula Omitted]

Bipolar III-N high-power electronic devices

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