UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment

Applied physics letters, 2011-09, Vol.99 (10), p.102103-102103-3

2011

Volltextzugriff (PDF)

Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface

Applied physics letters, 2011-09, Vol.99 (12), p.122102-122102-3

2011

Volltextzugriff (PDF)

Improvement of photo-induced negative bias stability of oxide thin film transistors by reducing the density of sub-gap states related to oxygen vacancies

Applied physics letters, 2013-03, Vol.102 (12)

2013

Volltextzugriff (PDF)

Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

Applied physics letters, 2011-03, Vol.98 (10), p.103509-103509-3

2011

Volltextzugriff (PDF)

Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150°C

Applied physics letters, 2012-04, Vol.100 (16), p.162108-162108-4

2012

Volltextzugriff (PDF)

The Effect of Density-of-State on the Temperature and Gate Bias-Induced Instability of InGaZnO Thin Film Transistors

Journal of the Electrochemical Society, 2010, Vol.157 (11), p.H983

2010

Volltextzugriff (PDF)

Comprehensive studies of the degradation mechanism in amorphous InGaZnO transistors by the negative bias illumination stress

Microelectronic engineering, 2011-07, Vol.88 (7), p.1412-1416

2011

Volltextzugriff (PDF)

Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With \hbox and \hbox Gate Dielectrics

IEEE electron device letters, 2010-12, Vol.31 (12), p.1404-1406

2010

Volltextzugriff (PDF)

Trench-Structured High-Current-Driving Aluminum-Doped Indium-Tin-Zinc Oxide Semiconductor Thin-Film Transistor

IEEE electron device letters, 2022-10, Vol.43 (10), p.1677-1680

2022

Volltextzugriff (PDF)

Ti-Doped Indium Tin Oxide Thin Films for Transparent Field-Effect Transistors: Control of Charge-Carrier Density and Crystalline Structure

ACS applied materials & interfaces, 2011-07, Vol.3 (7), p.2522-2528

2011

Volltextzugriff (PDF)

P-2: Novel High Mobility Oxide TFT with Self-Aligned S/D Regions Formed by Wet-etch process

SID International Symposium Digest of technical papers, 2016-05, Vol.47 (1), p.1129-1131

2016

Volltextzugriff (PDF)

The Impact of Device Configuration on the Photon-Enhanced Negative Bias Thermal Instability of GaInZnO Thin Film Transistors

Electrochemical and solid-state letters, 2010, Vol.13 (6), p.H213

2010

Volltextzugriff (PDF)

Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With [Formula Omitted] and [Formula Omitted] Gate Dielectrics

IEEE electron device letters, 2010-12, Vol.31 (12), p.1404

2010

Volltextzugriff (PDF)

Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With hbox SiN x and hbox SiO 2 Gate Dielectrics

IEEE electron device letters, 2010-12, Vol.31 (12), p.1404-1406

2010

Volltextzugriff (PDF)

P-33: Impact of TiO2 Incorporation in the Structural and Electrical Property of the Sputtered Indium Tin Oxide Field Effect Transistors

SID International Symposium Digest of technical papers, 2011-06, Vol.42 (1), p.1212-1214

2011

Volltextzugriff (PDF)

P‐33: Impact of TiO 2 Incorporation in the Structural and Electrical Property of the Sputtered Indium Tin Oxide Field Effect Transistors

SID International Symposium Digest of technical papers, 2011-06, Vol.42 (1), p.1212-1214

2011

Volltextzugriff (PDF)

Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With SiNx and Si02 Gate Dielectrics

IEEE electron device letters, 2010, Vol.31 (12), p.1404-1406

2010

Volltextzugriff (PDF)

The effect of SiO2/SiNx bilayer structure on the bias and light-induced instability in InGaZnO TFTs

18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2011, p.1-4

2011

Volltextzugriff (PDF)

Bird-mimetic Wing System of Flapping-wing Micro Air Vehicle with Autonomous Flight Control Capability

Journal of bionics engineering, 2016-07, Vol.13 (3), p.458-467

2016

Volltextzugriff (PDF)

Improvement in the Photo-Induced Bias Instability of Oxide TFT by Controlling Sub-Gap States

Meeting abstracts (Electrochemical Society), 2012-06, Vol.MA2012-02 (42), p.3053-3053

2012

Volltextzugriff (PDF)

Controlling Residual Lithium in High‐Nickel (>90 %) Lithium Layered Oxides for Cathodes in Lithium‐Ion Batteries

Angewandte Chemie International Edition, 2020-10, Vol.59 (42), p.18662-18669

International ed. in English, 2020

Volltextzugriff (PDF)

Influence of Rb/Cs Cation-Exchange on Inorganic Sn Halide Perovskites: From Chemical Structure to Physical Properties

Chemistry of materials, 2017-04, Vol.29 (7), p.3181-3188

2017

Volltextzugriff (PDF)

Integrative analysis of genomic and epigenomic regulation of the transcriptome in liver cancer

Nature communications, 2017-10, Vol.8 (1), p.839-11, Article 839

2017

Volltextzugriff (PDF)

Changes in the physical properties and color stability of aesthetic restorative materials caused by various beverages

Dental Materials Journal, 2019/01/28, Vol.38(1), pp.33-40

2019

Volltextzugriff (PDF)

Distinct TLR-mediated pathways regulate house dust mite–induced allergic disease in the upper and lower airways

Journal of allergy and clinical immunology, 2013-02, Vol.131 (2), p.549-561

2013

Volltextzugriff (PDF)

1 – 25 von 888

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(710)
Mit Volltextzugriff
(724)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(521)
Life Sciences & Biomedicine
(354)
Humans
(194)
Male
(134)
Female
(114)
Physical Sciences
(110)
Technology
(101)
Animals
(89)
Middle Aged
(88)
Aged
(74)
Adult
(65)
Neurosciences & Neurology
(62)
Biochemistry & Molecular Biology
(60)
Mice
(56)
Physics
(56)
Pharmacology & Pharmacy
(55)
Science & Technology - Other Topics
(52)
Materials Science
(50)
Clinical Neurology
(49)
Engineering
(49)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(8)

Menü

Weitere Dienste

Einstellungen

Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment

Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface

Improvement of photo-induced negative bias stability of oxide thin film transistors by reducing the density of sub-gap states related to oxygen vacancies

Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150°C

The Effect of Density-of-State on the Temperature and Gate Bias-Induced Instability of InGaZnO Thin Film Transistors

Comprehensive studies of the degradation mechanism in amorphous InGaZnO transistors by the negative bias illumination stress

Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With \hbox and \hbox Gate Dielectrics

Trench-Structured High-Current-Driving Aluminum-Doped Indium-Tin-Zinc Oxide Semiconductor Thin-Film Transistor

Ti-Doped Indium Tin Oxide Thin Films for Transparent Field-Effect Transistors: Control of Charge-Carrier Density and Crystalline Structure

P-2: Novel High Mobility Oxide TFT with Self-Aligned S/D Regions Formed by Wet-etch process

The Impact of Device Configuration on the Photon-Enhanced Negative Bias Thermal Instability of GaInZnO Thin Film Transistors

Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With [Formula Omitted] and [Formula Omitted] Gate Dielectrics

Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With hbox SiN x and hbox SiO 2 Gate Dielectrics

P-33: Impact of TiO2 Incorporation in the Structural and Electrical Property of the Sputtered Indium Tin Oxide Field Effect Transistors

P‐33: Impact of TiO 2 Incorporation in the Structural and Electrical Property of the Sputtered Indium Tin Oxide Field Effect Transistors

Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With SiNx and Si02 Gate Dielectrics

The effect of SiO2/SiNx bilayer structure on the bias and light-induced instability in InGaZnO TFTs

Bird-mimetic Wing System of Flapping-wing Micro Air Vehicle with Autonomous Flight Control Capability

Improvement in the Photo-Induced Bias Instability of Oxide TFT by Controlling Sub-Gap States

Controlling Residual Lithium in High‐Nickel (>90 %) Lithium Layered Oxides for Cathodes in Lithium‐Ion Batteries

Influence of Rb/Cs Cation-Exchange on Inorganic Sn Halide Perovskites: From Chemical Structure to Physical Properties

Integrative analysis of genomic and epigenomic regulation of the transcriptome in liver cancer

Changes in the physical properties and color stability of aesthetic restorative materials caused by various beverages

Distinct TLR-mediated pathways regulate house dust mite–induced allergic disease in the upper and lower airways

Suchergebnisse filtern