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Guest Editorial: The dawn of gallium oxide microelectronics

Applied physics letters, 2018-02, Vol.112 (6)

2018

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beta -Ga2O3 MOSFETs for Radio Frequency Operation

IEEE electron device letters, 2017-06, Vol.38 (6), p.790-793

2017

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Donors and deep acceptors in β-Ga2O3

Applied physics letters, 2018-08, Vol.113 (6)

2018

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Recessed-Gate Enhancement-Mode \beta -Ga2O3 MOSFETs

IEEE electron device letters, 2018-01, Vol.39 (1), p.67-70

2018

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Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition

Applied physics letters, 2017-07, Vol.111 (1)

2017

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Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices

Scientific reports, 2017-10, Vol.7 (1), p.1-7, Article 13218

2017

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ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

IEEE electron device letters, 2019-07, Vol.40 (7), p.1056-1059

2019

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High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge

Applied physics letters, 2017-04, Vol.110 (14)

2017

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Lateral β-Ga2O3 field effect transistors

Semiconductor science and technology, 2020, Vol.35 (1)

2020

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Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band

IEEE electron device letters, 2020-07, Vol.41 (7), p.989-992

2020

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Thermally-Aware Layout Design of β-Ga₂O₃ Lateral MOSFETs

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1251-1257

2022

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Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2589-2597

2007

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Self-Heating Characterization of \beta -Ga2O3 Thin-Channel MOSFETs by Pulsed - and Raman Nanothermography

IEEE transactions on electron devices, 2020-01, Vol.67 (1), p.204-211

2020

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Si content variation and influence of deposition atmosphere in homoepitaxial Si-doped β-Ga2O3 films by pulsed laser deposition

APL materials, 2018-10, Vol.6 (10), p.101102-101102-10

2018

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Ionic Metal-Oxide TFTs for Integrated Switching Applications

IEEE transactions on electron devices, 2016-05, Vol.63 (5), p.1921-1927

2016

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Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates

IEEE electron device letters, 2010-02, Vol.31 (2), p.99-101

2010

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Strained AlInN/GaN HEMTs on SiC With 2.1-A/mm Output Current and 104-GHz Cutoff Frequency

IEEE electron device letters, 2010-06, Vol.31 (6), p.561-563

2010

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3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped \beta -Ga2O3 MOSFETs

IEEE electron device letters, 2016-07, Vol.37 (7), p.902-905

2016

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Pulsed Active Load-Pull Measurements for the Design of High-Efficiency Class-B RF Power Amplifiers With GaN HEMTs

IEEE transactions on microwave theory and techniques, 2009-04, Vol.57 (4), p.881-889

2009

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Effective Suppression of IV Knee Walk-Out in AlGaN/GaN HEMTs for Pulsed-IV Pulsed-RF With a Large Signal Network Analyzer

IEEE microwave and wireless components letters, 2006-12, Vol.16 (12), p.681-683

2006

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Progress towards III-nitrides HEMTs on free-standing diamond substrates for thermal management

Physica status solidi. A, Applications and materials science, 2011-02, Vol.208 (2), p.439-444

2011

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Implementation of High-Power-Density X -Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process

IEEE electron device letters, 2015-10, Vol.36 (10), p.1004-1007

2015

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Radiation-Hard ZnO Thin Film Transistors

IEEE transactions on nuclear science, 2015-06, Vol.62 (3), p.1399-1404

2015

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Self-Heating Characterization of $\beta$ -Ga 2 O 3 Thin-Channel MOSFETs by Pulsed ${I}$ –${V}$ and Raman Nanothermography

IEEE transactions on electron devices, 2020-01, Vol.67 (1), p.204-211

2020

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Self-Heating Characterization of [Formula Omitted]-Ga2O3 Thin-Channel MOSFETs by Pulsed [Formula Omitted]–[Formula Omitted] and Raman Nanothermography

IEEE transactions on electron devices, 2020-01, Vol.67 (1), p.204

2020

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Guest Editorial: The dawn of gallium oxide microelectronics

beta -Ga2O3 MOSFETs for Radio Frequency Operation

Donors and deep acceptors in β-Ga2O3

Recessed-Gate Enhancement-Mode \beta -Ga2O3 MOSFETs

Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition

Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices

ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge

Lateral β-Ga2O3 field effect transistors

Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band

Thermally-Aware Layout Design of β-Ga₂O₃ Lateral MOSFETs

Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices

Self-Heating Characterization of \beta -Ga2O3 Thin-Channel MOSFETs by Pulsed - and Raman Nanothermography

Si content variation and influence of deposition atmosphere in homoepitaxial Si-doped β-Ga2O3 films by pulsed laser deposition

Ionic Metal-Oxide TFTs for Integrated Switching Applications

Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates

Strained AlInN/GaN HEMTs on SiC With 2.1-A/mm Output Current and 104-GHz Cutoff Frequency

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped \beta -Ga2O3 MOSFETs

Pulsed Active Load-Pull Measurements for the Design of High-Efficiency Class-B RF Power Amplifiers With GaN HEMTs

Effective Suppression of IV Knee Walk-Out in AlGaN/GaN HEMTs for Pulsed-IV Pulsed-RF With a Large Signal Network Analyzer

Progress towards III-nitrides HEMTs on free-standing diamond substrates for thermal management

Implementation of High-Power-Density X -Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process

Radiation-Hard ZnO Thin Film Transistors

Self-Heating Characterization of $\beta$ -Ga 2 O 3 Thin-Channel MOSFETs by Pulsed ${I}$ –${V}$ and Raman Nanothermography

Self-Heating Characterization of [Formula Omitted]-Ga2O3 Thin-Channel MOSFETs by Pulsed [Formula Omitted]–[Formula Omitted] and Raman Nanothermography

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