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RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz

IEEE electron device letters, 2007-05, Vol.28 (5), p.354-356

2007

Volltextzugriff (PDF)

Dominant effect of near-interface native point defects on ZnO Schottky barriers

Applied physics letters, 2007-03, Vol.90 (10), p.102116-102116-3

2007

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High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier

IEEE electron device letters, 2010-01, Vol.31 (1), p.2-4

2010

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Thermal and doping dependence of 4H-SiC polytype transformation

Applied physics letters, 2002-10, Vol.81 (15), p.2785-2787

2002

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Localized states at InGaN/GaN quantum well interfaces

Applied physics letters, 1999-12, Vol.75 (24), p.3835-3837

1999

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High performance 0.14 μm gate-length AlGaN/GaN power HEMTs on SiC

IEEE electron device letters, 2003-11, Vol.24 (11), p.677-679

2003

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Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2589-2597

2007

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Micro-Auger electron spectroscopy studies of chemical and electronic effects at GaN-sapphire interfaces

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2004-11, Vol.22 (6), p.2284-2289

2004

Volltextzugriff (PDF)

Chemically dependent traps and polytypes at Pt/Ti contacts to 4H and 6H–SiC

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-03, Vol.20 (2), p.554-560

2002

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High frequency performance of Ga free barrier AlInN/GaN HEMT

Physica status solidi. C, 2010-10, Vol.7 (10), p.2433-2435

2010

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Ohmic contact characterization of AlGaN/GaN device layers with spatially localized LEEN spectroscopy

Solid-state electronics, 2002-09, Vol.46 (9), p.1427-1431

2002

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Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors

Applied physics letters, 2003-11, Vol.83 (20), p.4178-4180

2003

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Effects of deep-level defects on ohmic contact and frequency performance of AlGaN/GaN high-electron-mobility transistors

Applied physics letters, 2003-07, Vol.83 (3), p.485-487

2003

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Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation

Solid-state electronics, 2003-10, Vol.47 (10), p.1781-1786

2003

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Effective Suppression of IV Knee Walk-Out in AlGaN/GaN HEMTs for Pulsed-IV Pulsed-RF With a Large Signal Network Analyzer

IEEE microwave and wireless components letters, 2006-12, Vol.16 (12), p.681-683

2006

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Pulsed Active Load-Pull Measurements for the Design of High-Efficiency Class-B RF Power Amplifiers With GaN HEMTs

IEEE transactions on microwave theory and techniques, 2009-04, Vol.57 (4), p.881-889

2009

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Low energy electron-excited nano-luminescence spectroscopy of GaN surfaces and interfaces

Applied surface science, 2001-05, Vol.175-176, p.442-449

2001

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Defect formation near GaN surfaces and interfaces

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.70-74

1999

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Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-06, Vol.75 (2), p.218-223

2000

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High-Power Ka-B and Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier

IEEE electron device letters, 2010, Vol.31 (1), p.2-4

2010

Volltextzugriff (PDF)

Pulsed Active LoadaPull Measurements for the Design of High-Efficiency Class-B RF Power Amplifiers With GaN HEMTs

IEEE transactions on microwave theory and techniques, 2009-01, Vol.57 (4)

2009

Volltextzugriff (PDF)

AlGaN/GaN HEMT on Diamond Technology Demonstration

2006 IEEE Compound Semiconductor Integrated Circuit Symposium, 2006, p.271-274

2006

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RF Power Measurements of InAlN/GaN Unstrained HEMTs on @@iSiC@ Substrates at 10 GHz

IEEE electron device letters, 2007-05, Vol.28 (5), p.354-356

2007

Volltextzugriff (PDF)

Comparative Study of AlGaN/GaN HEMTs on Free-Standing Diamond and Silicon Substrates for Thermal Effects

2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010, p.1-4

2010

Volltextzugriff (PDF)

High performance 0.14 mum gate-length AlGaN/GaN power HEMTs on SiC

IEEE electron device letters, 2003-11, Vol.24 (11), p.677-679

2003

Volltextzugriff (PDF)

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RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz

Dominant effect of near-interface native point defects on ZnO Schottky barriers

High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier

Thermal and doping dependence of 4H-SiC polytype transformation

Localized states at InGaN/GaN quantum well interfaces

High performance 0.14 μm gate-length AlGaN/GaN power HEMTs on SiC

Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices

Micro-Auger electron spectroscopy studies of chemical and electronic effects at GaN-sapphire interfaces

Chemically dependent traps and polytypes at Pt/Ti contacts to 4H and 6H–SiC

High frequency performance of Ga free barrier AlInN/GaN HEMT

Ohmic contact characterization of AlGaN/GaN device layers with spatially localized LEEN spectroscopy

Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors

Effects of deep-level defects on ohmic contact and frequency performance of AlGaN/GaN high-electron-mobility transistors

Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation

Effective Suppression of IV Knee Walk-Out in AlGaN/GaN HEMTs for Pulsed-IV Pulsed-RF With a Large Signal Network Analyzer

Pulsed Active Load-Pull Measurements for the Design of High-Efficiency Class-B RF Power Amplifiers With GaN HEMTs

Low energy electron-excited nano-luminescence spectroscopy of GaN surfaces and interfaces

Defect formation near GaN surfaces and interfaces

Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces

High-Power Ka-B and Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier

Pulsed Active LoadaPull Measurements for the Design of High-Efficiency Class-B RF Power Amplifiers With GaN HEMTs

AlGaN/GaN HEMT on Diamond Technology Demonstration

RF Power Measurements of InAlN/GaN Unstrained HEMTs on @@iSiC@ Substrates at 10 GHz

Comparative Study of AlGaN/GaN HEMTs on Free-Standing Diamond and Silicon Substrates for Thermal Effects

High performance 0.14 mum gate-length AlGaN/GaN power HEMTs on SiC

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