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Investigation of long-term light stability of negative charge injected into oxide-nitride-oxide passivation stack of crystalline silicon solar cells

Journal of applied physics, 2022-12, Vol.132 (21)

2022

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Analysis of the negative charges injected into a SiO2/SiNx stack using plasma charging technology for field‐effect passivation on a boron‐doped silicon surface

Progress in photovoltaics, 2021-01, Vol.29 (1), p.54-63

2021

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Plasma charge injection technology and its application to c-Si solar cells for field-effect passivation

Journal of applied physics, 2019-05, Vol.125 (17)

Hwang, Jeong-Mo

2019

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Enhanced passivation and stability of negative charge injected SiNx with higher nitrogen content on the boron diffused surface of n-type Si solar cells

Solar energy materials and solar cells, 2024-08, Vol.273, p.112922, Article 112922

2024

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Terminal Crosslinking of Highly Sulfonated Poly(arylene ether sulfone) Block Copolymers: Synthesis and Properties as Polymer Electrolyte Membranes

Bulletin of the Korean Chemical Society, 2015, 36(1), , pp.287-294

2015

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Investigation on Light Stability of Injected Charge in α-SiNx: H by Plasma Charge Injection Technology

2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), 2021, Vol.2021, p.2119-2123

2021

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Azide-assisted terminal crosslinking of ionomeric blocks: Effects on morphology and proton conductivity

Journal of membrane science, 2012-03, Vol.392, p.58-65

2012

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Plasma charge injection technology and its application to c-Si solar cells for field-effect passivation

Journal of applied physics, 2019-05, Vol.125 (17)

Hwang, Jeong-Mo

2019

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Experimental evidence for nonlucky electron model effect in 0.15-μm NMOSFETs

IEEE transactions on electron devices, 2002-11, Vol.49 (11), p.1876-1881

2002

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Investigation of High Nitrogen Composition \text} for Textured Front Surface Passivation of n-Type Silicon Solar Cells in Terms of Light Stability of Injected Negative Charge and Cell Performance

2023 IEEE 50th Photovoltaic Specialists Conference (PVSC), 2023, p.1-3

2023

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Boron penetration in p+ polycrystalline-Si/Al2O3/Si metal–oxide–semiconductor system

Applied physics letters, 2000-10, Vol.77 (14), p.2207-2209

2000

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Investigation of long-term light stability of negative charge injected into oxide-nitride-oxide passivation stack of crystalline silicon solar cells

Journal of applied physics, 2022-12, Vol.132 (21)

2022

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A leakage current mechanism caused by the interaction of residual oxidation stress and high-energy ion implantation impact in advanced CMOS technology

IEEE electron device letters, 1999-05, Vol.20 (5), p.251-253

1999

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Enhanced passivation and stability of negative charge injected SiNx with higher nitrogen content on the boron diffused surface of n-type Si solar cells

Solar energy materials and solar cells, 2024-08, Vol.273 (C)

2024

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Characterization of Corner-Induced Leakage Current of a Shallow Silicided n + /p Junction for Quarter-Micron MOSFETs

Japanese Journal of Applied Physics, 1998-03, Vol.37 (3S), p.1179

1998

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DC bias effects on data retention at room temperature in SONOS nonvolatile memory devices

2007 IEEE International Integrated Reliability Workshop Final Report, 2007, p.147-149

2007

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Impact of Nitrogen Implantation in Lightly Doped Drain (NIL) on Deep Sub-Micron CMOS Devices

Japanese Journal of Applied Physics, 2000, Vol.39 (4S), p.2141-2146

2000

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A 15ns 4Mb NVSRAM in 0.13u SONOS Technology

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, 2008, p.83-86

2008

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Analysis of the negative charges injected into a SiO 2 /SiN x stack using plasma charging technology for field‐effect passivation on a boron‐doped silicon surface

Progress in photovoltaics, 2021-01, Vol.29 (1), p.54-63

2021

Volltextzugriff (PDF)

Analysis of the negative charges injected into a SiO2/SiNx stack using plasma charging technology for field-effect passivation on a boron-doped silicon surface

Progress in photovoltaics, 2020-10, Vol.29 (1)

2020

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Analysis of the negative charges injected into a SiO 2 /SiN x stack using plasma charging technology for field‐effect passivation on a boron‐doped silicon surface

Progress in photovoltaics, 2020-10, Vol.29 (1)

2020

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Effects of nitrogen implantation in silicon for shallow p+-n junction formation

Applied physics letters, 1999-03, Vol.74 (13), p.1833-1835

1999

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Plasma enhanced chemical vapor deposition Si-rich silicon oxynitride films for advanced self-aligned contact oxide etching in sub-0.25 μm ultralarge scale integration technology and beyond

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2000-07, Vol.18 (4), p.1401-1410

2000

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Electrical properties of MOCVD BST thin films annealed by rapid thermal annealing process

Integrated ferroelectrics, 2001-01, Vol.33 (1-4), p.291-301

2001

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Room-temperature bias acceleration test for data retention screening on SONOS nonvolatile memory devices

2007 International Semiconductor Device Research Symposium, 2007, p.1-2

2007

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Investigation of long-term light stability of negative charge injected into oxide-nitride-oxide passivation stack of crystalline silicon solar cells

Analysis of the negative charges injected into a SiO2/SiNx stack using plasma charging technology for field‐effect passivation on a boron‐doped silicon surface

Plasma charge injection technology and its application to c-Si solar cells for field-effect passivation

Enhanced passivation and stability of negative charge injected SiNx with higher nitrogen content on the boron diffused surface of n-type Si solar cells

Terminal Crosslinking of Highly Sulfonated Poly(arylene ether sulfone) Block Copolymers: Synthesis and Properties as Polymer Electrolyte Membranes

Investigation on Light Stability of Injected Charge in α-SiNx: H by Plasma Charge Injection Technology

Azide-assisted terminal crosslinking of ionomeric blocks: Effects on morphology and proton conductivity

Plasma charge injection technology and its application to c-Si solar cells for field-effect passivation

Experimental evidence for nonlucky electron model effect in 0.15-μm NMOSFETs

Investigation of High Nitrogen Composition \text} for Textured Front Surface Passivation of n-Type Silicon Solar Cells in Terms of Light Stability of Injected Negative Charge and Cell Performance

Boron penetration in p+ polycrystalline-Si/Al2O3/Si metal–oxide–semiconductor system

Investigation of long-term light stability of negative charge injected into oxide-nitride-oxide passivation stack of crystalline silicon solar cells

A leakage current mechanism caused by the interaction of residual oxidation stress and high-energy ion implantation impact in advanced CMOS technology

Enhanced passivation and stability of negative charge injected SiNx with higher nitrogen content on the boron diffused surface of n-type Si solar cells

Characterization of Corner-Induced Leakage Current of a Shallow Silicided n + /p Junction for Quarter-Micron MOSFETs

DC bias effects on data retention at room temperature in SONOS nonvolatile memory devices

Impact of Nitrogen Implantation in Lightly Doped Drain (NIL) on Deep Sub-Micron CMOS Devices

A 15ns 4Mb NVSRAM in 0.13u SONOS Technology

Analysis of the negative charges injected into a SiO 2 /SiN x stack using plasma charging technology for field‐effect passivation on a boron‐doped silicon surface

Analysis of the negative charges injected into a SiO2/SiNx stack using plasma charging technology for field-effect passivation on a boron-doped silicon surface

Analysis of the negative charges injected into a SiO 2 /SiN x stack using plasma charging technology for field‐effect passivation on a boron‐doped silicon surface

Effects of nitrogen implantation in silicon for shallow p+-n junction formation

Plasma enhanced chemical vapor deposition Si-rich silicon oxynitride films for advanced self-aligned contact oxide etching in sub-0.25 μm ultralarge scale integration technology and beyond

Electrical properties of MOCVD BST thin films annealed by rapid thermal annealing process

Room-temperature bias acceleration test for data retention screening on SONOS nonvolatile memory devices

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