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A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate

IEEE journal of solid-state circuits, 2016-01, Vol.51 (1), p.204-212

2016

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Unified Endurance Degradation Model of Floating Gate NAND Flash Memory

IEEE transactions on electron devices, 2013-06, Vol.60 (6), p.2031-2037

2013

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Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming

IEEE journal of solid-state circuits, 2015-01, Vol.50 (1), p.204-213

2015

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Data retention characteristics of sub-100 nm NAND flash memory cells

IEEE electron device letters, 2003-12, Vol.24 (12), p.748-750

2003

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Floating gate technology for high performance 8-level 3-bit NAND flash memory

Solid-state electronics, 2009-07, Vol.53 (7), p.792-797

2009

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Charge-trapping device structure of SiO2∕SiN∕high-k dielectric Al2O3 for high-density flash memory

Applied physics letters, 2005-04, Vol.86 (15)

2005

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New scaling limitation of the floating gate cell in NAND Flash Memory

2010 IEEE International Reliability Physics Symposium, 2010, p.599-603

2010

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A 90-nm CMOS 1.8-V 2-Gb NAND flash memory for mass storage applications

IEEE journal of solid-state circuits, 2003-11, Vol.38 (11), p.1934-1942

2003

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Intrinsic fluctuations in Vertical NAND flash memories

2012 Symposium on VLSI Technology (VLSIT), 2012, p.21-22

2012

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32nm 3-bit 32Gb NAND Flash Memory with DPT (d̲ouble p̲atterning t̲echnology) process for mass production

2010 Symposium on VLSI Technology, 2010, p.125-126

2010

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Optimal cell design for enhancing reliability characteristics for sub 30 nm NAND Flash memory

2010 IEEE International Reliability Physics Symposium, 2010, p.611-614

2010

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16-Gigabit, 8-level NAND flash memory with 51nm 44-cell string technology

ESSDERC 2008 - 38th European Solid-State Device Research Conference, 2008, p.111-114

2008

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Effect of Intermetal Dielectric Layer On the Interpoly Dielectric Properties of Nonvolatile Memory Devices

ECS transactions, 2013, Vol.58 (5), p.69-73

2013

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Degradation of tunnel oxide by FN current stress and its effects on data retention characteristics of 90 nm NAND flash memory cells

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual, 2003, p.497-501

2003

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7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate

2015 IEEE International Solid State Circuits Conference (ISSCC), 2015, p.1-3

2015

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7.6 1GB/s 2Tb NAND flash multi-chip package with frequency-boosting interface chip

2015 IEEE International Solid State Circuits Conference (ISSCC), 2015, p.1-3

2015

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A new approach of NAND flash cell trap analysis using RTN characteristics

2011 Symposium on VLSI Technology - Digest of Technical Papers, 2011, p.206-207

2011

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Disturbance-suppressed ReRAM write algorithm for high-capacity and high-performance memory

2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS), 2014, p.1-4

2014

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A New Cell-Type String Select Transistor in NAND Flash Memories for under 20nm Node

2012 4th IEEE International Memory Workshop, 2012, p.1-3

2012

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A new approach for trap analysis of vertical NAND flash cell using RTN characteristics

2014 IEEE International Electron Devices Meeting, 2014, p.14.5.1-14.5.4

2014

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A highly manufacturable integration technology for 27nm 2 and 3bit/cell NAND flash memory

2010 International Electron Devices Meeting, 2010, p.5.1.1-5.1.4

2010

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Observation and Effective Suppression of Dielectric Relaxation in Charge-Trap NAND Flash Memory

2011 3rd IEEE International Memory Workshop (IMW), 2011, p.1-2

2011

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Effects of interface trap generation and annihilation on the data retention characteristics of flash memory cells

IEEE transactions on device and materials reliability, 2004-03, Vol.4 (1), p.110-117

2004

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Extraction of location and energies of traps in nanoscale flash memory using RTN

2008 IEEE Silicon Nanoelectronics Workshop, 2008, p.1-2

2008

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7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers

2016 IEEE International Solid-State Circuits Conference (ISSCC), 2016, p.130-131

2016

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A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate

Unified Endurance Degradation Model of Floating Gate NAND Flash Memory

Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming

Data retention characteristics of sub-100 nm NAND flash memory cells

Floating gate technology for high performance 8-level 3-bit NAND flash memory

Charge-trapping device structure of SiO2∕SiN∕high-k dielectric Al2O3 for high-density flash memory

New scaling limitation of the floating gate cell in NAND Flash Memory

A 90-nm CMOS 1.8-V 2-Gb NAND flash memory for mass storage applications

Intrinsic fluctuations in Vertical NAND flash memories

32nm 3-bit 32Gb NAND Flash Memory with DPT (d̲ouble p̲atterning t̲echnology) process for mass production

Optimal cell design for enhancing reliability characteristics for sub 30 nm NAND Flash memory

16-Gigabit, 8-level NAND flash memory with 51nm 44-cell string technology

Effect of Intermetal Dielectric Layer On the Interpoly Dielectric Properties of Nonvolatile Memory Devices

Degradation of tunnel oxide by FN current stress and its effects on data retention characteristics of 90 nm NAND flash memory cells

7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate

7.6 1GB/s 2Tb NAND flash multi-chip package with frequency-boosting interface chip

A new approach of NAND flash cell trap analysis using RTN characteristics

Disturbance-suppressed ReRAM write algorithm for high-capacity and high-performance memory

A New Cell-Type String Select Transistor in NAND Flash Memories for under 20nm Node

A new approach for trap analysis of vertical NAND flash cell using RTN characteristics

A highly manufacturable integration technology for 27nm 2 and 3bit/cell NAND flash memory

Observation and Effective Suppression of Dielectric Relaxation in Charge-Trap NAND Flash Memory

Effects of interface trap generation and annihilation on the data retention characteristics of flash memory cells

Extraction of location and energies of traps in nanoscale flash memory using RTN

7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers

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