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An Integrated Approach for Managing Read Disturbs in High-Density NAND Flash Memory

IEEE transactions on computer-aided design of integrated circuits and systems, 2016-07, Vol.35 (7), p.1079-1091

2016

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Dynamic Erase Voltage and Time Scaling for Extending Lifetime of NAND Flash-Based SSDs

IEEE transactions on computers, 2017-04, Vol.66 (4), p.616-630

2017

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Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement

Advanced electronic materials, 2023-05, Vol.9 (5), p.n/a

2023

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Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics

Advanced electronic materials, 2024-01, Vol.10 (1), p.n/a

2024

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A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface

IEEE journal of solid-state circuits, 2012-04, Vol.47 (4), p.981-989

2012

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Improving performance and lifetime of NAND storage systems using relaxed program sequence

2016 53nd ACM/EDAC/IEEE Design Automation Conference (DAC), 2016, p.1-6

2016

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An immersed interface method for acoustic wave equations with discontinuous coefficients in complex geometries

Journal of computational physics, 2021-02, Vol.426, p.109932, Article 109932

2021

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Numerical simualtion of a circulating fluidized bed combustor and evaluation of empirical models for estimating solids volume fraction

Powder technology, 2021-11, Vol.393, p.786-795

2021

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Domain reduction strategy for large-eddy simulation to predict underwater radiated noise from a marine propeller

Ocean engineering, 2023-07, Vol.279, p.114538, Article 114538

2023

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Understanding the Anatomy of the Transverse Nasalis Aponeurotic Fibers and Its Importance in Asian Rhinoplasty

Annals of plastic surgery, 2018-11, Vol.81 (5), p.516-522

2018

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Commutative recursive filters for explicit-filter large-eddy simulation of turbulent flows

Computers & fluids, 2021-03, Vol.217, p.104846, Article 104846

2021

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Heterogeneous and Monolithic 3D Integration Technology for Mixed-Signal ICs

Electronics (Basel), 2022-10, Vol.11 (19), p.3013

2022

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Effects of Back Metal on the DC and RF Characteristics of 3D Stacked InGaAs RF Device for Monolithic 3D RF Applications

IEEE electron device letters, 2023-04, Vol.44 (4), p.598-601

2023

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Heterogeneous and Monolithic 3D Integration of III–V-Based Radio Frequency Devices on Si CMOS Circuits

ACS nano, 2022-06, Vol.16 (6), p.9031-9040

2022

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Heavily Doped Channel Carrier Mobility in β-Ga 2 O 3 Lateral Accumulation MOSFET

IEEE transactions on electron devices, 2024-05, Vol.71 (5), p.3429-3432

2024

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Large Polarization of Hf₀.₅Zr₀.₅Oₓ Ferroelectric Film on InGaAs With Electric-Field Cycling and Annealing Temperature Engineering

IEEE electron device letters, 2024-05, Vol.45 (5), p.766-769

2024

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Thermal Studies of 3-D Stacked InGaAs HEMTs and Mitigation Strategy of Self-Heating Effect Using Buried Metal Insertion

IEEE transactions on electron devices, 2024-08, Vol.71 (8), p.4517-4523

2024

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Heterogeneous 3-D Sequential CFETs With Ge (110) Nanosheet p-FETs on Si (100) Bulk n-FETs

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.393-399

2024

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Stackable InGaAs-on-Insulator HEMTs for Monolithic 3-D Integration

IEEE transactions on electron devices, 2021-05, Vol.68 (5), p.2205-2211

2021

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Robust control chart based on mixed-effects modeling framework: A case study in NAND flash memory industry

Quality engineering, 2024-07, Vol.36 (3), p.510-520

2024

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200-mm Si CMOS Process-Compatible Integrated Passive Device Stack for Millimeter-Wave Monolithic 3-D Integration

IEEE transactions on electron devices, 2023-10, Vol.70 (10), p.1-8

2023

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The Study of Seafarers Education System for the Sea Power in Korea

Journal of the Korean Society of Marine Environment and Safety, 2017-02, Vol.23 (1), p.56-66

2017

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Heavily Doped Channel Carrier Mobility in β-Ga2O3 Lateral Accumulation MOSFET

IEEE transactions on electron devices, 2024-05, Vol.71 (5), p.3429-3432

2024

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Influence of Channel Structure on the Subthreshold Swing of InGaAs HEMTs at Cryogenic Temperatures Down to 4 K

IEEE transactions on electron devices, 2024-05, Vol.71 (5), p.3390-3395

2024

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Effect of Scandium Insertion Into the Gate-Stack of Ferroelectric Field-Effect Transistors

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1996-2000

2023

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An Integrated Approach for Managing Read Disturbs in High-Density NAND Flash Memory

Dynamic Erase Voltage and Time Scaling for Extending Lifetime of NAND Flash-Based SSDs

Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement

Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics

A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface

Improving performance and lifetime of NAND storage systems using relaxed program sequence

An immersed interface method for acoustic wave equations with discontinuous coefficients in complex geometries

Numerical simualtion of a circulating fluidized bed combustor and evaluation of empirical models for estimating solids volume fraction

Domain reduction strategy for large-eddy simulation to predict underwater radiated noise from a marine propeller

Understanding the Anatomy of the Transverse Nasalis Aponeurotic Fibers and Its Importance in Asian Rhinoplasty

Commutative recursive filters for explicit-filter large-eddy simulation of turbulent flows

Heterogeneous and Monolithic 3D Integration Technology for Mixed-Signal ICs

Effects of Back Metal on the DC and RF Characteristics of 3D Stacked InGaAs RF Device for Monolithic 3D RF Applications

Heterogeneous and Monolithic 3D Integration of III–V-Based Radio Frequency Devices on Si CMOS Circuits

Heavily Doped Channel Carrier Mobility in β-Ga 2 O 3 Lateral Accumulation MOSFET

Large Polarization of Hf₀.₅Zr₀.₅Oₓ Ferroelectric Film on InGaAs With Electric-Field Cycling and Annealing Temperature Engineering

Thermal Studies of 3-D Stacked InGaAs HEMTs and Mitigation Strategy of Self-Heating Effect Using Buried Metal Insertion

Heterogeneous 3-D Sequential CFETs With Ge (110) Nanosheet p-FETs on Si (100) Bulk n-FETs

Stackable InGaAs-on-Insulator HEMTs for Monolithic 3-D Integration

Robust control chart based on mixed-effects modeling framework: A case study in NAND flash memory industry

200-mm Si CMOS Process-Compatible Integrated Passive Device Stack for Millimeter-Wave Monolithic 3-D Integration

The Study of Seafarers Education System for the Sea Power in Korea

Heavily Doped Channel Carrier Mobility in β-Ga2O3 Lateral Accumulation MOSFET

Influence of Channel Structure on the Subthreshold Swing of InGaAs HEMTs at Cryogenic Temperatures Down to 4 K

Effect of Scandium Insertion Into the Gate-Stack of Ferroelectric Field-Effect Transistors

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