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Characteristics of SiO2 etching by using pulse-time modulation in 60 MHz/2 MHz dual-frequency capacitive coupled plasma

Current Applied Physics, 2013, 13(8), , pp.1830-1836

2013

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Effectiveness of non-linear graded buffers for In(Ga,Al)As metamorphic layers grown on GaAs (0 0 1)

Journal of crystal growth, 2009-02, Vol.311 (4), p.1091-1095

2009

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Antioxidant activity and analysis of proanthocyanidins from pine (Pinus densiflora) needles

Nutrition Research and Practice, 2011, 5(4), , pp.281-287

2011

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Optical properties and electronic subband structures in In xGa 1−xN/GaN multiple quantum wells

Thin solid films, 2011, Vol.519 (15), p.5122-5125

2011

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Optical properties and electronic subband structures in InxGa1-xN/GaN multiple quantum wells

Thin solid films, 2011-05, Vol.519 (15), p.5122-5125

2011

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A magnetoluminescence study of GaAs / Al 0.25 Ga 0.75 As quantum wells in an inplane magnetic field

Solid state communications, 2010, Vol.150 (37), p.1782-1784

2010

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A magnetoluminescence study of quantum wells in an inplane magnetic field

Solid state communications, 2010-10, Vol.150 (37-38), p.1782-1784

2010

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Comparative Analysis of the Multiple Test Methods for the Detection of Pandemic Influenza A/H1N1 2009 Virus

Journal of Microbiology and Biotechnology, 2010, 20(10), , pp.1450-1456

2010

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Microstructure and magnetoresistance of sputtered bismuth thin films upon annealing

Journal of applied physics, 2005-07, Vol.98 (2)

2005

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Role of inert gas additive on dry etch patterning of InGaP in planar inductively coupled BCl3 plasmas

Solid-state electronics, 2004-01, Vol.48 (1), p.189-192

2004

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Structural and optical properties of heat-treated Ga doped ZnO thin films grown on glass substrate by RF magnetron sputtering

Journal of the Korean Vacuum Society, 2008-01, Vol.17 (1), p.23-27

2008

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The optical properties of GZO and ZnO thin films deposited by RF magnetron sputtering

Journal of the Korean Vacuum Society, 2007-11, Vol.16 (6), p.453-457

2007

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BCl3/Ne etching of III–V semiconductors in a planar inductively coupled plasma reactor

Applied surface science, 2004-01, Vol.222 (1-4), p.74-81

2004

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Role of inert gas additive on dry etch patterning of InGaP in planar inductively coupled BCl 3 plasmas

Solid-state electronics, 2004, Vol.48 (1), p.189-192

2004

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Bandgap engineering of self-assembled InAs quantum dots with a thin AlAs barrier

Physica. E, Low-dimensional systems & nanostructures, 2005-02, Vol.26 (1), p.100-104

2005

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Electrochemical properties of heat-treated multi-walled carbon nanotubes

Journal of the Korean Vacuum Society, 2008-01, Vol.17 (1), p.67-72

2008

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Effect of Ga-doping on the properties of ZnO films grown on glass substrate at room temperature by radio frequency magnetron sputtering

Journal of the Korean Vacuum Society, 2008-01, Vol.17 (1), p.40-45

2008

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Dry etching of polycarbonate using O 2 /SF 6 , O 2 /N 2 and O 2 /CH 4 plasmas

Journal of the Korean Vacuum Society, 2008-01, Vol.17 (1), p.16-22

2008

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Time-resolved photoluminescence spectroscopy of InAs quantum dots on InP with various InAlGaAs barrier thicknesses

Physica. E, Low-dimensional systems & nanostructures, 2005-02, Vol.26 (1), p.207-211

2005

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Understanding of etch mechanism and etch depth distribution in inductively coupled plasma etching of GaAs

Solid-state electronics, 2001-09, Vol.45 (9), p.1683-1686

2001

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Development of advanced plasma process with an optical emission spectroscopy-based end-point technique for etching of AlGaAs over GaAs in manufacture of heterojunction bipolar transistors

Solid-state electronics, 2002-05, Vol.46 (5), p.773-775

2002

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Effect on 4H-SiC Schottky Rectifiers of Ar Discharges Generated in A Planar Inductively Coupled Plasma Source

Journal of semiconductor technology and science, 2003, Vol.3 (1), p.21-26

2003

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Interfacial analysis of CVD diamond on copper substrates

Diamond and related materials, 1997-04, Vol.6 (5), p.743-746

1997

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Non-destructive measurement of electron concentration in n-ZnSe by means of reflectance difference spectroscopy

Journal of crystal growth, 1998, Vol.184, p.505-509

1998

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p-type ZnSe : N grown by molecular beam epitaxy: evidence of non-radiative recombination centers in moderately to heavily doped material

Journal of crystal growth, 1994-04, Vol.138 (1), p.352-356

1994

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Characteristics of SiO2 etching by using pulse-time modulation in 60 MHz/2 MHz dual-frequency capacitive coupled plasma

Effectiveness of non-linear graded buffers for In(Ga,Al)As metamorphic layers grown on GaAs (0 0 1)

Antioxidant activity and analysis of proanthocyanidins from pine (Pinus densiflora) needles

Optical properties and electronic subband structures in In xGa 1−xN/GaN multiple quantum wells

Optical properties and electronic subband structures in InxGa1-xN/GaN multiple quantum wells

A magnetoluminescence study of GaAs / Al 0.25 Ga 0.75 As quantum wells in an inplane magnetic field

A magnetoluminescence study of quantum wells in an inplane magnetic field

Comparative Analysis of the Multiple Test Methods for the Detection of Pandemic Influenza A/H1N1 2009 Virus

Microstructure and magnetoresistance of sputtered bismuth thin films upon annealing

Role of inert gas additive on dry etch patterning of InGaP in planar inductively coupled BCl3 plasmas

Structural and optical properties of heat-treated Ga doped ZnO thin films grown on glass substrate by RF magnetron sputtering

The optical properties of GZO and ZnO thin films deposited by RF magnetron sputtering

BCl3/Ne etching of III–V semiconductors in a planar inductively coupled plasma reactor

Role of inert gas additive on dry etch patterning of InGaP in planar inductively coupled BCl 3 plasmas

Bandgap engineering of self-assembled InAs quantum dots with a thin AlAs barrier

Electrochemical properties of heat-treated multi-walled carbon nanotubes

Effect of Ga-doping on the properties of ZnO films grown on glass substrate at room temperature by radio frequency magnetron sputtering

Dry etching of polycarbonate using O 2 /SF 6 , O 2 /N 2 and O 2 /CH 4 plasmas

Time-resolved photoluminescence spectroscopy of InAs quantum dots on InP with various InAlGaAs barrier thicknesses

Understanding of etch mechanism and etch depth distribution in inductively coupled plasma etching of GaAs

Development of advanced plasma process with an optical emission spectroscopy-based end-point technique for etching of AlGaAs over GaAs in manufacture of heterojunction bipolar transistors

Effect on 4H-SiC Schottky Rectifiers of Ar Discharges Generated in A Planar Inductively Coupled Plasma Source

Interfacial analysis of CVD diamond on copper substrates

Non-destructive measurement of electron concentration in n-ZnSe by means of reflectance difference spectroscopy

p-type ZnSe : N grown by molecular beam epitaxy: evidence of non-radiative recombination centers in moderately to heavily doped material

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