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Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition

Journal of applied physics, 2014-02, Vol.115 (7)

2014

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Detection of oxygen ion drift in Pt/Al2O3/TiO2/Pt RRAM using interface-free single-layer graphene electrodes

Carbon (New York), 2014-08, Vol.75, p.209-216

2014

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Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition

Journal of applied physics, 2013-11, Vol.114 (17)

2013

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Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition

Physica status solidi. A, Applications and materials science, 2014-09, Vol.211 (9), p.2166-2171

2014

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Resistive switching of a TaOx/TaON double layer via ionic control of carrier tunneling

Applied physics letters, 2014-04, Vol.104 (15)

2014

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Stabilized resistive switching behaviors of a Pt/TaOx/TiN RRAM under different oxygen contents

Physica status solidi. A, Applications and materials science, 2014-09, Vol.211 (9), p.2189-2194

2014

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The effect of ozone concentration during atomic layer deposition on the properties of ZrO2 films for capacitor applications

Thin solid films, 2016-11, Vol.619, p.317-322

2016

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Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier

Applied physics letters, 2014-01, Vol.104 (4)

2014

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Reduction of RuO2 Film to Metallic Ru Film Using Atomic Layer Deposition under Different Oxygen Partial Pressure

Jpn J Appl Phys, 2013-05, Vol.52 (5), p.05FB05-05FB05-4

2013

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Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2012-01, Vol.30 (1)

2012

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The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer

Physica status solidi. A, Applications and materials science, 2015-12, Vol.212 (12), p.2785-2790

2015

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Effect of N Concentration Upon Resistive Switching Behavior of Au/Ni/TaON/NiSi ECM Devices

Physica status solidi. A, Applications and materials science, 2018-12, Vol.215 (23), p.n/a

2018

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Resolution of methoxyphenamine and its analogues on a chiral stationary phase based on (+)‐(18‐crown‐6)‐2,3,11,12‐tetracarboxylic acid

Journal of separation science, 2018-12, Vol.41 (23), p.4281-4285

2018

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Nonlinear and complementary resistive switching behaviors of Au/Ti/TaOx/TiN devices dependent on Ti thicknesses

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2015-09, Vol.33 (5)

2015

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Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2015-09, Vol.33 (5)

2015

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Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma

Physica status solidi. A, Applications and materials science, 2015-03, Vol.212 (3), p.674-679

2015

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Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2016-05, Vol.34 (3)

2016

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Deposition temperature dependence of titanium oxide thin films grown by remote-plasma atomic layer deposition

Physica status solidi. A, Applications and materials science, 2013-02, Vol.210 (2), p.276-284

2013

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Resistive switching behaviors of Ti nano-layer embedded TaO x -based devices

Current applied physics, 2017-02, Vol.17 (2), p.230-234

2017

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Stabilization of Ni conductive filaments using NH3 plasma treatment for electrochemical metallization memory

2015-08

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Resistive switching behaviors of Cu/TaOx/TiN device with combined oxygen vacancy/copper conductive filaments

Current Applied Physics, 2015, 15(9), , pp.1005-1009

2015

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Characteristics of WN{sub x}C{sub y} films deposited using remote plasma atomic layer deposition with ({sup Me}Cp)W(CO){sub 2}(NO) for Cu diffusion barrier

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2015-09, Vol.33 (5)

2015

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Investigation of the Flatband Voltage (VFB) Shift of Al2O3 on N2 Plasma Treated Si Substrate

Journal of nanoscience and nanotechnology, 2013-09, Vol.13 (9), p.6275-6279

2013

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Detection of oxygen ion drift in Pt/Al sub(2)O sub(3)/TiO sub(2)/Pt RRAM using interface-free single-layer graphene electrodes

Carbon (New York), 2014-08, Vol.75, p.209-216

2014

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Growth behavior and structural characteristics of TiO sub(2) thin films using (CpN)Ti(NMe sub(2)) sub(2) and oxygen remote plasma

Physica status solidi. A, Applications and materials science, 2015-03, Vol.212 (3), p.674-679

2015

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Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition

Detection of oxygen ion drift in Pt/Al2O3/TiO2/Pt RRAM using interface-free single-layer graphene electrodes

Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition

Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition

Resistive switching of a TaOx/TaON double layer via ionic control of carrier tunneling

Stabilized resistive switching behaviors of a Pt/TaOx/TiN RRAM under different oxygen contents

The effect of ozone concentration during atomic layer deposition on the properties of ZrO2 films for capacitor applications

Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier

Reduction of RuO2 Film to Metallic Ru Film Using Atomic Layer Deposition under Different Oxygen Partial Pressure

Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications

The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer

Effect of N Concentration Upon Resistive Switching Behavior of Au/Ni/TaON/NiSi ECM Devices

Resolution of methoxyphenamine and its analogues on a chiral stationary phase based on (+)‐(18‐crown‐6)‐2,3,11,12‐tetracarboxylic acid

Nonlinear and complementary resistive switching behaviors of Au/Ti/TaOx/TiN devices dependent on Ti thicknesses

Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier

Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma

Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition

Deposition temperature dependence of titanium oxide thin films grown by remote-plasma atomic layer deposition

Resistive switching behaviors of Ti nano-layer embedded TaO x -based devices

Stabilization of Ni conductive filaments using NH3 plasma treatment for electrochemical metallization memory

Resistive switching behaviors of Cu/TaOx/TiN device with combined oxygen vacancy/copper conductive filaments

Characteristics of WN{sub x}C{sub y} films deposited using remote plasma atomic layer deposition with ({sup Me}Cp)W(CO){sub 2}(NO) for Cu diffusion barrier

Investigation of the Flatband Voltage (VFB) Shift of Al2O3 on N2 Plasma Treated Si Substrate

Detection of oxygen ion drift in Pt/Al sub(2)O sub(3)/TiO sub(2)/Pt RRAM using interface-free single-layer graphene electrodes

Growth behavior and structural characteristics of TiO sub(2) thin films using (CpN)Ti(NMe sub(2)) sub(2) and oxygen remote plasma

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