UB Paderborn / Katalog / Suche / in CDI

Stretchable, Transparent Zinc Oxide Thin Film Transistors

Advanced functional materials, 2010-10, Vol.20 (20), p.3577-3582

2010

Volltextzugriff (PDF)

Employment of a bi-layer of Ni(P)/Cu as a diffusion barrier in a Cu/Sn/Cu bonding structure for three-dimensional interconnects

Acta materialia, 2013-10, Vol.61 (18), p.6736-6742

2013

Volltextzugriff (PDF)

Solution-processed InGaZnO-based thin film transistors for printed electronics applications

Applied physics letters, 2009-07, Vol.95 (1), p.012108-012108-3

2009

Volltextzugriff (PDF)

A study on the microstructural and chemical evolution of In–Ga–Zn–O sol–gel films and the effects on the electrical properties

Thin solid films, 2013-07, Vol.540, p.31-35

2013

Volltextzugriff (PDF)

Thermal reliability of a bilayer of Ni(P)/Cu as a diffusion barrier for Cu/Sn/Cu bonding

Japanese Journal of Applied Physics, 2016-06, Vol.55 (6S3), p.6-06JF03

2016

Volltextzugriff (PDF)

Effects of post-annealing on thermoelectric properties of bismuth–tellurium thin films deposited by co-sputtering

Microelectronic engineering, 2011-05, Vol.88 (5), p.541-544

2011

Volltextzugriff (PDF)

A Study on the Breakdown Mechanism of an Electroless-Plated Ni(P) Diffusion Barrier for Cu/Sn/Cu 3D Interconnect Bonding Structures

Journal of electronic materials, 2012-01, Vol.41 (1), p.109-114

2012

Volltextzugriff (PDF)

A Study on Sputtered Bi-Te Thermoelectric Films with Various Compositions: Microstructure Evolution and the Effects on Thermoelectric and Electrical Properties

Journal of electronic materials, 2012, Vol.41 (1), p.60-66

2012

Volltextzugriff (PDF)

Thermal stability of metal Ohmic contacts in indium gallium zinc oxide transistors using a graphene barrier layer

Applied physics letters, 2013-03, Vol.102 (11)

2013

Volltextzugriff (PDF)

Microstructure evolution of sputtered BiSb–Te thermoelectric films during post-annealing and its effects on the thermoelectric properties

Journal of alloys and compounds, 2013-03, Vol.553, p.343-349

2013

Volltextzugriff (PDF)

Microstructure and electrical properties of XInZnO (X = Ti, Zr, Hf) films and device performance of their thin film transistorsaThe effects of employing Group IV-B elements in place of Ga

Journal of alloys and compounds, 2013-06, Vol.563, p.124-129

2013

Volltextzugriff (PDF)

Microstructure and electrical properties of XInZnO (X=Ti, Zr, Hf) films and device performance of their thin film transistors—The effects of employing Group IV-B elements in place of Ga

Journal of alloys and compounds, 2013-06, Vol.563, p.124-129

2013

Volltextzugriff (PDF)

Effects of Sn doping on the growth morphology and electrical properties of ZnO nanowires

Nanotechnology, 2013-02, Vol.24 (6), p.065703-065703

2013

Volltextzugriff (PDF)

Employment of a Bi-Layer of NiP/Cu as a Diffusion Barrier Layer for Cu bump/Sn Bonding Structures for the 3D Integration Applications

AIP conference proceedings, 2012-03

2012

Volltextzugriff (PDF)

Microstructure evolution of sputtered BiSbaTe thermoelectric films during post-annealing and its effects on the thermoelectric properties

Journal of alloys and compounds, 2013-03, Vol.553, p.343-349

2013

Volltextzugriff (PDF)

Fabrication of Nanocrystalline InGaZnO Films: The Microstructure and the Device Performance of Their Thin Film Transistors

AIP conference proceedings, 2012-03

2012

Volltextzugriff (PDF)

The effects of a combined thermal treatment of substrate heating and post-annealing on the microstructure of InGaZnO films and the device performance of their thin film transistors

Surface and interface analysis, 2012-11, Vol.44 (11-12), p.1431-1435

2012

Volltextzugriff (PDF)

A Study on the Formation Mechanism of Ytterbium Germanide for Schottky Contact Applications

AIP conference proceedings, 2012-03

2012

Volltextzugriff (PDF)

High-Performance Electrochemical Capacitors Based on Nanocomposites of Transition Metal Oxide Aero-Gel/Vertically Aligned Carbon Nanotubes

AIP conference proceedings, 2012-03

2012

Volltextzugriff (PDF)

Effects of Post Annealing on the Electrical Properties of ZnO Thin Films Transistors

한국현미경학회지, 2012, 42(4), , pp.212-217

2012

Volltextzugriff (PDF)

Effects of Post Annealing on the Electrical Properties of ZnO Thin Films Transistors

Applied microscopy, 2012, Vol.42 (4), p.212-217

2012

Volltextzugriff (PDF)

Menü

Weitere Dienste

Einstellungen

Stretchable, Transparent Zinc Oxide Thin Film Transistors

Employment of a bi-layer of Ni(P)/Cu as a diffusion barrier in a Cu/Sn/Cu bonding structure for three-dimensional interconnects

Solution-processed InGaZnO-based thin film transistors for printed electronics applications

A study on the microstructural and chemical evolution of In–Ga–Zn–O sol–gel films and the effects on the electrical properties

Thermal reliability of a bilayer of Ni(P)/Cu as a diffusion barrier for Cu/Sn/Cu bonding

Effects of post-annealing on thermoelectric properties of bismuth–tellurium thin films deposited by co-sputtering

A Study on the Breakdown Mechanism of an Electroless-Plated Ni(P) Diffusion Barrier for Cu/Sn/Cu 3D Interconnect Bonding Structures

A Study on Sputtered Bi-Te Thermoelectric Films with Various Compositions: Microstructure Evolution and the Effects on Thermoelectric and Electrical Properties

Thermal stability of metal Ohmic contacts in indium gallium zinc oxide transistors using a graphene barrier layer

Microstructure evolution of sputtered BiSb–Te thermoelectric films during post-annealing and its effects on the thermoelectric properties

Microstructure and electrical properties of XInZnO (X = Ti, Zr, Hf) films and device performance of their thin film transistorsaThe effects of employing Group IV-B elements in place of Ga

Microstructure and electrical properties of XInZnO (X=Ti, Zr, Hf) films and device performance of their thin film transistors—The effects of employing Group IV-B elements in place of Ga

Effects of Sn doping on the growth morphology and electrical properties of ZnO nanowires

Employment of a Bi-Layer of NiP/Cu as a Diffusion Barrier Layer for Cu bump/Sn Bonding Structures for the 3D Integration Applications

Microstructure evolution of sputtered BiSbaTe thermoelectric films during post-annealing and its effects on the thermoelectric properties

Fabrication of Nanocrystalline InGaZnO Films: The Microstructure and the Device Performance of Their Thin Film Transistors

The effects of a combined thermal treatment of substrate heating and post-annealing on the microstructure of InGaZnO films and the device performance of their thin film transistors

A Study on the Formation Mechanism of Ytterbium Germanide for Schottky Contact Applications

High-Performance Electrochemical Capacitors Based on Nanocomposites of Transition Metal Oxide Aero-Gel/Vertically Aligned Carbon Nanotubes

Effects of Post Annealing on the Electrical Properties of ZnO Thin Films Transistors

Effects of Post Annealing on the Electrical Properties of ZnO Thin Films Transistors

Suchergebnisse filtern