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Characteristics of n-Channel MOSFETs With Tailored Source/Drain Extension for Mask ROM and EEPROM Applications

IEEE transactions on electron devices, 2009-09, Vol.56 (9), p.2099-2106

2009

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IEEE_Xplore

Effect of Isothermal Aging on the Long-Term Reliability of Fine-Pitch Sn–Ag–Cu and Sn–Ag Solder Interconnects With and Without Board-Side Ni Surface Finish

Journal of electronic materials, 2014-11, Vol.43 (11), p.4126-4133

2014

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An Automated Permuting Capacitor Device for Calibration of IVDs

IEEE transactions on instrumentation and measurement, 2014-09, Vol.63 (9), p.2271-2278

2014

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IEEE_Xplore

Ultralow Capacitance Transient Voltage Suppressor Design

IEEE transactions on electron devices, 2016-08, Vol.63 (8), p.3064-3068

2016

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IEEE_Xplore

High-Performance 1-μm GaN n-MOSFET With MgO/MgO―TiO2 Stacked Gate Dielectrics

IEEE electron device letters, 2011-03, Vol.32 (3), p.306-308

2011

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A 700-V Device in High-Voltage Power ICs With Low On-State Resistance and Enhanced SOA

IEEE transactions on electron devices, 2013-09, Vol.60 (9), p.2847-2853

2013

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IEEE_Xplore

Improvement on Optical Properties of GaN Light-Emitting Diode With Mesh-Textured Sapphire Back Delineated by Laser Scriber

IEEE photonics technology letters, 2009-04, Vol.21 (7), p.477-479

2009

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IEEE_Xplore

The Conduction Characteristics of a 700 V Lateral Insulated-Gate Bipolar Transistor in a Junction Isolation Technology

IEEE electron device letters, 2015-09, Vol.36 (9), p.929-931

2015

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IEEE_Xplore

Dimension Dependence of Unusual HCI-Induced Degradation on N-Channel High-Voltage DEMOSFET

IEEE transactions on electron devices, 2013-05, Vol.60 (5), p.1723-1729

2013

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IEEE_Xplore

The Role of Pd in Sn-Ag-Cu Solder Interconnect Mechanical Shock Performance

Journal of electronic materials, 2013-02, Vol.42 (2), p.215-223

2013

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Investigation on the Initial Hot-Carrier Injection in P-LDMOS Transistors With Shallow Trench Isolation Structure

IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3569-3574

2008

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IEEE_Xplore

Improving the Electrostatic Discharge Robustness of a Junction Barrier Schottky Diode Using an Embedded p-n-p BJT

IEEE electron device letters, 2014-10, Vol.35 (10), p.1052-1054

2014

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IEEE_Xplore

Simple scheme to increase hold voltage for silicon-controlled rectifier

Electronics letters, 2014-01, Vol.50 (3), p.200-202

2014

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Electrical Characteristics of Al2O3/TiO2/Al2O3 Nanolaminate MOS Capacitor on p-GaN With Post Metallization Annealing and (NH4)2SX Treatments

IEEE electron device letters, 2009, Vol.30 (9), p.907-909

2009

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Demonstration of 3500-V 4H-SiC Lateral MOSFETs

IEEE electron device letters, 2011-03, Vol.32 (3), p.360-362

2011

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IEEE_Xplore

Impact of the TiN barrier layer on the positive bias temperature instabilities of high-k/metal-gate field effect transistors

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4S), p.4-1-04DA01-5

2015

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The Effect of Self-Heating in LDMOSFET Expansion Regime

IEEE transactions on electron devices, 2012-11, Vol.59 (11), p.3042-3047

2012

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IEEE_Xplore

High detectivity InGaN-GaN multiquantum well p-n junction photodiodes

IEEE journal of quantum electronics, 2003-05, Vol.39 (5), p.681-685

2003

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IEEE_Xplore

Design of an RF Transmit/Receive Switch Using LDMOSFETs With High Power Capability and Low Insertion Loss

IEEE transactions on electron devices, 2011-06, Vol.58 (6), p.1722-1727

2011

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IEEE_Xplore

The parameter extraction including field-plate effect of 0.25 μm 12 V LDMOSFETs

Semiconductor science and technology, 2012, Vol.27 (1)

2012

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A Resist-Protection-Oxide Transistor With Adaptable Low-Frequency Noise for Stochastic Neuromorphic Computation in VLSI

IEEE electron device letters, 2011-09, Vol.32 (9), p.1293-1295

2011

Link zum Volltext
IEEE_Xplore

High-Performance 1- \mu\hbox GaN n-MOSFET With MgO/MgO- \hbox Stacked Gate Dielectrics

IEEE electron device letters, 2011-03, Vol.32 (3), p.306-308

2011

Link zum Volltext
IEEE_Xplore

An Octagonal Dual-Gate Transistor With Enhanced and Adaptable Low-Frequency Noise

IEEE electron device letters, 2011-01, Vol.32 (1), p.9-11

2011

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IEEE_Xplore

The Study of the Electrothermal Property of High-Voltage Drain-Extended MOSFETs

IEEE transactions on electron devices, 2012-04, Vol.59 (4), p.1149-1154

2012

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IEEE_Xplore

Calibrations of inductive voltage dividers by four-terminal-pair bridge with automated permuting capacitors

2012 Conference on Precision electromagnetic Measurements, 2012, p.718-719

2012

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IEEE_Xplore

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Characteristics of n-Channel MOSFETs With Tailored Source/Drain Extension for Mask ROM and EEPROM Applications

Effect of Isothermal Aging on the Long-Term Reliability of Fine-Pitch Sn–Ag–Cu and Sn–Ag Solder Interconnects With and Without Board-Side Ni Surface Finish

An Automated Permuting Capacitor Device for Calibration of IVDs

Ultralow Capacitance Transient Voltage Suppressor Design

High-Performance 1-μm GaN n-MOSFET With MgO/MgO―TiO2 Stacked Gate Dielectrics

A 700-V Device in High-Voltage Power ICs With Low On-State Resistance and Enhanced SOA

Improvement on Optical Properties of GaN Light-Emitting Diode With Mesh-Textured Sapphire Back Delineated by Laser Scriber

The Conduction Characteristics of a 700 V Lateral Insulated-Gate Bipolar Transistor in a Junction Isolation Technology

Dimension Dependence of Unusual HCI-Induced Degradation on N-Channel High-Voltage DEMOSFET

The Role of Pd in Sn-Ag-Cu Solder Interconnect Mechanical Shock Performance

Investigation on the Initial Hot-Carrier Injection in P-LDMOS Transistors With Shallow Trench Isolation Structure

Improving the Electrostatic Discharge Robustness of a Junction Barrier Schottky Diode Using an Embedded p-n-p BJT

Simple scheme to increase hold voltage for silicon-controlled rectifier

Electrical Characteristics of Al2O3/TiO2/Al2O3 Nanolaminate MOS Capacitor on p-GaN With Post Metallization Annealing and (NH4)2SX Treatments

Demonstration of 3500-V 4H-SiC Lateral MOSFETs

Impact of the TiN barrier layer on the positive bias temperature instabilities of high-k/metal-gate field effect transistors

The Effect of Self-Heating in LDMOSFET Expansion Regime

High detectivity InGaN-GaN multiquantum well p-n junction photodiodes

Design of an RF Transmit/Receive Switch Using LDMOSFETs With High Power Capability and Low Insertion Loss

The parameter extraction including field-plate effect of 0.25 μm 12 V LDMOSFETs

A Resist-Protection-Oxide Transistor With Adaptable Low-Frequency Noise for Stochastic Neuromorphic Computation in VLSI

High-Performance 1- \mu\hbox GaN n-MOSFET With MgO/MgO- \hbox Stacked Gate Dielectrics

An Octagonal Dual-Gate Transistor With Enhanced and Adaptable Low-Frequency Noise

The Study of the Electrothermal Property of High-Voltage Drain-Extended MOSFETs

Calibrations of inductive voltage dividers by four-terminal-pair bridge with automated permuting capacitors

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