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A CMOS silicon spin qubit

Nature communications, 2016-11, Vol.7 (1), p.13575-13575, Article 13575

2016

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Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon

Nature communications, 2019-07, Vol.10 (1), p.2776-6, Article 2776

2019

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Dispersively Detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor

Nano letters, 2015-07, Vol.15 (7), p.4622-4627

2015

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Electrical Control of g‑Factor in a Few-Hole Silicon Nanowire MOSFET

Nano letters, 2016-01, Vol.16 (1), p.88-92

2016

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Single-donor ionization energies in a nanoscale CMOS channel

Nature nanotechnology, 2010-02, Vol.5 (2), p.133-137

2010

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A single hole spin with enhanced coherence in natural silicon

Nature nanotechnology, 2022-10, Vol.17 (10), p.1072-1077

2022

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Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening

IEEE electron device letters, 2019-05, Vol.40 (5), p.784-787

2019

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Coherent coupling of two dopants in a silicon nanowire probed by Landau-Zener-Stückelberg interferometry

Physical review letters, 2013-03, Vol.110 (13), p.136802-136802, Article 136802

2013

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A two-atom electron pump

Nature communications, 2013-03, Vol.4 (1), p.1581-1581, Article 1581

2013

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Strongly Correlated Charge Transport in Silicon Metal-Oxide-Semiconductor Field-Effect Transistor Quantum Dots

Physical review letters, 2018-07, Vol.121 (2), p.027701-027701, Article 027701

2018

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Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction

Applied physics letters, 2016-11, Vol.109 (19)

2016

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Hybrid Metal-Semiconductor Electron Pump for Quantum Metrology

Physical review. X, 2013-05, Vol.3 (2), p.021012, Article 021012

2013

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Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3682-3688

2018

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Pauli spin blockade in CMOS double quantum dot devices

Physica Status Solidi. B: Basic Solid State Physics, 2017-03, Vol.254 (3), p.np-n/a

2017

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Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy

Physical review letters, 2012-05, Vol.108 (20), p.206812-206812, Article 206812

2012

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High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors

Applied physics letters, 2014-01, Vol.104 (4)

2014

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Detection of doubled shot noise in short normal-metal/ superconductor junctions

Nature (London), 2000-05, Vol.405 (6782), p.50-53

2000

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Control of the ionization state of three single donor atoms in silicon

Physical review. B, Condensed matter and materials physics, 2014-04, Vol.89 (16), Article 161404

2014

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Simple and controlled single electron transistor based on doping modulation in silicon nanowires

Applied physics letters, 2006-10, Vol.89 (14), p.143504-143504-3

2006

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Cryogenic instrumentation based on Silicon technology: from Astrophysics Cryo-Detectors to Quantum computing

Journal of instrumentation, 2020-04, Vol.15 (4), p.C04044-C04044

2020

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Background charges and quantum effects in quantum dots transport spectroscopy

The European physical journal. B, Condensed matter physics, 2009-08, Vol.70 (4), p.475-481

2009

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The coupled atom transistor

Journal of physics. Condensed matter, 2015-04, Vol.27 (15), p.154206-154206

2015

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Individual charge traps in silicon nanowires : Measurements of location, spin and occupation number by Coulomb blockade spectroscopy

The European physical journal. B, Condensed matter physics, 2006-12, Vol.54 (3), p.299-307

2006

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MOS technology for quantum computing: recent progress and perspectives for scaling up

2021 Device Research Conference (DRC), 2021, p.1-2

2021

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Scaling of Trigate nanowire (NW) MOSFETs to sub-7 nm width: 300 K transition to Single Electron Transistor

Solid-state electronics, 2013-06, Vol.84, p.179-184

2013

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A CMOS silicon spin qubit

Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon

Dispersively Detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor

Electrical Control of g‑Factor in a Few-Hole Silicon Nanowire MOSFET

Single-donor ionization energies in a nanoscale CMOS channel

A single hole spin with enhanced coherence in natural silicon

Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening

Coherent coupling of two dopants in a silicon nanowire probed by Landau-Zener-Stückelberg interferometry

A two-atom electron pump

Strongly Correlated Charge Transport in Silicon Metal-Oxide-Semiconductor Field-Effect Transistor Quantum Dots

Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction

Hybrid Metal-Semiconductor Electron Pump for Quantum Metrology

Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization

Pauli spin blockade in CMOS double quantum dot devices

Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy

High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors

Detection of doubled shot noise in short normal-metal/ superconductor junctions

Control of the ionization state of three single donor atoms in silicon

Simple and controlled single electron transistor based on doping modulation in silicon nanowires

Cryogenic instrumentation based on Silicon technology: from Astrophysics Cryo-Detectors to Quantum computing

Background charges and quantum effects in quantum dots transport spectroscopy

The coupled atom transistor

Individual charge traps in silicon nanowires : Measurements of location, spin and occupation number by Coulomb blockade spectroscopy

MOS technology for quantum computing: recent progress and perspectives for scaling up

Scaling of Trigate nanowire (NW) MOSFETs to sub-7 nm width: 300 K transition to Single Electron Transistor

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