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One‐Pot Gram‐Scale, Eco‐Friendly, and Cost‐Effective Synthesis of CuGaS2/ZnS Nanocrystals as Efficient UV‐Harvesting Down‐Converter for Photovoltaics

Advanced energy materials, 2018-07, Vol.8 (20), p.n/a

2018

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Super Ultra-High Resolution Liquid-Crystal-Display Using Perovskite Quantum-Dot Functional Color-Filters

Scientific reports, 2018-08, Vol.8 (1), p.12881-7, Article 12881

2018

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Synaptic variation reduction via embedding Au nanocrystals in resistive switching layer and bottom electrode interface for CuTe/CuO/TiN-stacked synaptic device

Journal of the Korean Physical Society, 2023-12, Vol.83 (12), p.970-977

2023

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Effect of double MgO tunneling barrier on thermal stability and TMR ratio for perpendicular MTJ spin-valve with tungsten layers

Applied physics letters, 2016-10, Vol.109 (18)

2016

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Super‐Linear‐Threshold‐Switching Selector with Multiple Jar‐Shaped Cu‐Filaments in the Amorphous Ge3Se7 Resistive Switching Layer in a Cross‐Point Synaptic Memristor Array

Advanced materials (Weinheim), 2022-10, Vol.34 (40), p.n/a

2022

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Sputter‐grown GeTe/Sb2Te3 superlattice interfacial phase change memory for low power and multi‐level‐cell operation

Electronics letters, 2022-01, Vol.58 (1), p.38-40

2022

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Polymer link breakage of polyimide-film-surface using hydrolysis reaction accelerator for enhancing chemical-mechanical-planarization polishing-rate

Scientific reports, 2022-03, Vol.12 (1), p.3366-3366, Article 3366

2022

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Super fine cerium hydroxide abrasives for SiO2 film chemical mechanical planarization performing scratch free

Scientific reports, 2021-09, Vol.11 (1), p.17736-17736, Article 17736

2021

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Two-step hydrogen-ion implantation annihilation of threading dislocation defects in strain-relaxed Si0.7Ge0.3

Journal of the Korean Physical Society, 2021, 79(12), , pp.1151-1156

2021

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Electro-Forming and Electro-Breaking of Nanoscale Ag Filaments for Conductive-Bridging Random-Access Memory Cell using Ag-Doped Polymer-Electrolyte between Pt Electrodes

Scientific reports, 2017-06, Vol.7 (1), p.3065-10, Article 3065

2017

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Effect of coupling ability between a synthetic antiferromagnetic layer and pinned layer on a bridging layer of Ta, Ti, and Pt in perpendicular-magnetic tunnel junctions

Nanotechnology, 2016-07, Vol.27 (29), p.295705-295705

2016

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Hardware Implementation of a Fully Functional Stochastic p‐STT Neuron for Probabilistic Computing

Advanced electronic materials, 2024-07, Vol.10 (7), p.n/a

2024

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Study of Ruthenium Oxides Species on Ruthenium Chemical Mechanical Planarization Using Periodate-Based Slurry

Journal of the Electrochemical Society, 2012-01, Vol.159 (3), p.H335-H341

2012

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[Co/NM/Pt]n-based seedless synthetic anti-ferromagnetic layer design for preventing MgO crystallinity degradation from Pt diffusion

Journal of the Korean Physical Society, 2024, 84(3), , pp.218-223

2024

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Chemical mechanical planarization mechanism of epitaxially grown Ge-film for sequential integrating 3D-structured transistor cells

Journal of the Korean Physical Society, 2022-12, Vol.81 (12), p.1262-1268

2022

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Impact of wet ceria abrasive size on initial step height removal efficiency for Isolated SiO2 film chemical mechanical planarization

Journal of the Korean Physical Society, 2021, 78(1), , pp.51-57

2021

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Double Pinned Perpendicular-Magnetic-Tunnel-Junction Spin-Valve Providing Multi-level Resistance States

Scientific reports, 2019-08, Vol.9 (1), p.11932-9, Article 11932

2019

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Effect of core quantum-dot size on power-conversion-efficiency for silicon solar-cells implementing energy-down-shift using CdSe/ZnS core/shell quantum dots

Nanoscale, 2014-11, Vol.6 (21), p.12524-12531

2014

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Effect of iron(III) nitrate concentration on tungsten chemical-mechanical-planarization performance

Applied surface science, 2013-10, Vol.282, p.512-517

2013

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Enhancement of electrical characteristics and reliability of CuGeS2/GeS2-based super-linear-threshold-switching device by insertion of TiN liner

Journal of the Korean Physical Society, 2022-06, Vol.80 (12), p.1076-1080

2022

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Effects of Pt capping layer on perpendicular magnet anisotropy in pseudo-spin valves of Ta/CoFeB/MgO/CoFeB/Pt magnetic-tunneling junctions

Applied physics letters, 2013-05, Vol.102 (21)

2013

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Relationship of Free Surface Area with Oxygen Concentration in Silicon Ingot Grown by Czochralski Method for High Efficiency Solar Cells

Journal of the Korean Physical Society, 2020, 77(11), , pp.940-944

2020

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Extremely high photoconductivity ultraviolet-light sensor using amorphous In–Ga–Zn–O thin-film-transistor

Journal of the Korean Physical Society, 2021, 78(12), , pp.1221-1226

2021

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Design of two-terminal-electrode vertical thyristor as cross-point memory cell without selector

Applied physics letters, 2018-07, Vol.113 (5)

2018

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Dependency of anti-ferro-magnetic coupling strength on Ru spacer thickness of [Co/Pd]n-synthetic-anti-ferro-magnetic layer in perpendicular magnetic-tunnel-junctions fabricated on 12-inch TiN electrode wafer

Journal of applied physics, 2014-07, Vol.116 (3)

2014

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One‐Pot Gram‐Scale, Eco‐Friendly, and Cost‐Effective Synthesis of CuGaS2/ZnS Nanocrystals as Efficient UV‐Harvesting Down‐Converter for Photovoltaics

Super Ultra-High Resolution Liquid-Crystal-Display Using Perovskite Quantum-Dot Functional Color-Filters

Synaptic variation reduction via embedding Au nanocrystals in resistive switching layer and bottom electrode interface for CuTe/CuO/TiN-stacked synaptic device

Effect of double MgO tunneling barrier on thermal stability and TMR ratio for perpendicular MTJ spin-valve with tungsten layers

Super‐Linear‐Threshold‐Switching Selector with Multiple Jar‐Shaped Cu‐Filaments in the Amorphous Ge3Se7 Resistive Switching Layer in a Cross‐Point Synaptic Memristor Array

Sputter‐grown GeTe/Sb2Te3 superlattice interfacial phase change memory for low power and multi‐level‐cell operation

Polymer link breakage of polyimide-film-surface using hydrolysis reaction accelerator for enhancing chemical-mechanical-planarization polishing-rate

Super fine cerium hydroxide abrasives for SiO2 film chemical mechanical planarization performing scratch free

Two-step hydrogen-ion implantation annihilation of threading dislocation defects in strain-relaxed Si0.7Ge0.3

Electro-Forming and Electro-Breaking of Nanoscale Ag Filaments for Conductive-Bridging Random-Access Memory Cell using Ag-Doped Polymer-Electrolyte between Pt Electrodes

Effect of coupling ability between a synthetic antiferromagnetic layer and pinned layer on a bridging layer of Ta, Ti, and Pt in perpendicular-magnetic tunnel junctions

Hardware Implementation of a Fully Functional Stochastic p‐STT Neuron for Probabilistic Computing

Study of Ruthenium Oxides Species on Ruthenium Chemical Mechanical Planarization Using Periodate-Based Slurry

[Co/NM/Pt]n-based seedless synthetic anti-ferromagnetic layer design for preventing MgO crystallinity degradation from Pt diffusion

Chemical mechanical planarization mechanism of epitaxially grown Ge-film for sequential integrating 3D-structured transistor cells

Impact of wet ceria abrasive size on initial step height removal efficiency for Isolated SiO2 film chemical mechanical planarization

Double Pinned Perpendicular-Magnetic-Tunnel-Junction Spin-Valve Providing Multi-level Resistance States

Effect of core quantum-dot size on power-conversion-efficiency for silicon solar-cells implementing energy-down-shift using CdSe/ZnS core/shell quantum dots

Effect of iron(III) nitrate concentration on tungsten chemical-mechanical-planarization performance

Enhancement of electrical characteristics and reliability of CuGeS2/GeS2-based super-linear-threshold-switching device by insertion of TiN liner

Effects of Pt capping layer on perpendicular magnet anisotropy in pseudo-spin valves of Ta/CoFeB/MgO/CoFeB/Pt magnetic-tunneling junctions

Relationship of Free Surface Area with Oxygen Concentration in Silicon Ingot Grown by Czochralski Method for High Efficiency Solar Cells

Extremely high photoconductivity ultraviolet-light sensor using amorphous In–Ga–Zn–O thin-film-transistor

Design of two-terminal-electrode vertical thyristor as cross-point memory cell without selector

Dependency of anti-ferro-magnetic coupling strength on Ru spacer thickness of [Co/Pd]n-synthetic-anti-ferro-magnetic layer in perpendicular magnetic-tunnel-junctions fabricated on 12-inch TiN electrode wafer

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