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High-Power GaN-Based Light-Emitting Diodes Using Thermally Stable and Highly Reflective Nano-Scaled Ni-Ag-Ni-Au Mirror

IEEE photonics technology letters, 2011-11, Vol.23 (22), p.1685-1687

2011

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Monolithic Flexible Vertical GaN Light‐Emitting Diodes for a Transparent Wireless Brain Optical Stimulator

Advanced materials (Weinheim), 2018-07, Vol.30 (28), p.e1800649-n/a

2018

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White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates

Nanotechnology, 2017-06, Vol.28 (22), p.225703-225703

2017

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Light‐Emitting Diodes: Monolithic Flexible Vertical GaN Light‐Emitting Diodes for a Transparent Wireless Brain Optical Stimulator (Adv. Mater. 28/2018)

Advanced materials (Weinheim), 2018-07, Vol.30 (28), p.n/a

2018

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Control of Crack Formation for the Fabrication of Crack-Free and Self-Isolated High-Efficiency Gallium Arsenide Photovoltaic Cells on Silicon Substrate

IEEE journal of photovoltaics, 2016-07, Vol.6 (4), p.1031-1035

2016

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Influence of Growth Temperature on the Characteristics of Single-Junction p–i–n InGaP Solar Cells

Journal of nanoscience and nanotechnology, 2017-04, Vol.17 (4), p.2559-2562

2017

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Improved light-output power of InGaN-based multiple-quantum-well light-emitting diodes by GaN/InAlGaN/GaN multi-barrier

Current Applied Physics, 2016, 16(2), , pp.150-154

2016

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Efficiency Enhancement of Single-Junction GaAs Solar Cells with Gradually Doped p–n Junction Active Layers

Science of advanced materials, 2018-04, Vol.10 (4), p.575-579

2018

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Fabrication and theoretical analysis of GaN-based vertical light-emitting diodes with SiO 2 current blocking layer

Semiconductor science and technology, 2011-09, Vol.26 (9), p.95008

2011

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610 GHz InAlAs/In0.75GaAs Metamorphic HEMTs with an Ultra-Short 15-nm-Gate

2007 IEEE International Electron Devices Meeting, 2007, p.613-616

2007

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Fabrication and theoretical analysis of GaN-based vertical light-emitting diodes with SiO sub(2) current blocking layer

Semiconductor science and technology, 2011-01, Vol.26 (9), p.1-7

2011

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Fabrication and theoretical analysis of GaN-based vertical light-emitting diodes with SiO2 current blocking layer

Semiconductor science and technology, 2011-09, Vol.26 (9), p.095008

2011

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Characteristics and simulation analysis of GaN-based vertical light emitting diodes via wafer-level additional surface roughening process

Physica status solidi. A, Applications and materials science, 2012-06, Vol.209 (6), p.1168-1173

2012

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Atomic-level strain-relieving mechanism and local electronic structureof a wetting film

Applied physics letters, 2005-09, Vol.87 (12), p.123112-123112-3

2005

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Atomic-level strain-relieving mechanism and local electronic structure of a wetting film

Applied physics letters, 2005-09, Vol.87 (12)

2005

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Anticancer, antiobesity, and anti-inflammatory activity species in vitro

中医杂志：英文版, 2013 (1), p.92-97

Eunjeong Choi Heesook Park Jehyuk Lee Gunhee Kim

2013

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A Design and Validation of 400 W PV Emulator Using Simple Equivalent Circuit for PV Power System Test

Energies (Basel), 2023-02, Vol.16 (4), p.1561

2023

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Anticancer, antiobesity, and anti-inflammatory activity of Artemisia species in vitro

Journal of Traditional Chinese Medicine, 2013-02, Vol.33 (1), p.92-97

2013

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High Speed 3D IR Scanner for Home Service Robots

IEICE transactions on fundamentals of electronics, communications and computer sciences, 2006-03, Vol.E89-A (3), p.678-685

RYU, J.

2006

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High-Power GaN-Based Light-Emitting Diodes Using Thermally Stable and Highly Reflective Nano-Scaled Ni-Ag-Ni-Au Mirror

Monolithic Flexible Vertical GaN Light‐Emitting Diodes for a Transparent Wireless Brain Optical Stimulator

White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates

Light‐Emitting Diodes: Monolithic Flexible Vertical GaN Light‐Emitting Diodes for a Transparent Wireless Brain Optical Stimulator (Adv. Mater. 28/2018)

Control of Crack Formation for the Fabrication of Crack-Free and Self-Isolated High-Efficiency Gallium Arsenide Photovoltaic Cells on Silicon Substrate

Influence of Growth Temperature on the Characteristics of Single-Junction p–i–n InGaP Solar Cells

Improved light-output power of InGaN-based multiple-quantum-well light-emitting diodes by GaN/InAlGaN/GaN multi-barrier

Efficiency Enhancement of Single-Junction GaAs Solar Cells with Gradually Doped p–n Junction Active Layers

Fabrication and theoretical analysis of GaN-based vertical light-emitting diodes with SiO 2 current blocking layer

610 GHz InAlAs/In0.75GaAs Metamorphic HEMTs with an Ultra-Short 15-nm-Gate

Fabrication and theoretical analysis of GaN-based vertical light-emitting diodes with SiO sub(2) current blocking layer

Fabrication and theoretical analysis of GaN-based vertical light-emitting diodes with SiO2 current blocking layer

Characteristics and simulation analysis of GaN-based vertical light emitting diodes via wafer-level additional surface roughening process

Atomic-level strain-relieving mechanism and local electronic structureof a wetting film

Atomic-level strain-relieving mechanism and local electronic structure of a wetting film

Anticancer, antiobesity, and anti-inflammatory activity species in vitro

A Design and Validation of 400 W PV Emulator Using Simple Equivalent Circuit for PV Power System Test

Anticancer, antiobesity, and anti-inflammatory activity of Artemisia species in vitro

High Speed 3D IR Scanner for Home Service Robots

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