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A 0.0046mm2 6.7μW Three-Stage Amplifier Capable of Driving 0.5-to-1.9nF Capacitive Load with >0.68MHz GBW without Compensation Zero

2020 IEEE Symposium on VLSI Circuits, 2020, p.1-2

2020

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A 0.06-mm2 double-sampling single-OTA 2nd-order ΔΣ modulator in 0.18-μm CMOS technology

IEEE Asian Solid-State Circuits Conference 2011, 2011, p.253-256

2011

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0.1 Hz 4.0 PW Ti:Sapphire laser at CoReLS

2015 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015, Vol.2, p.1-2

2015

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A 0.18V charge-pumped DFF with 50.8% energy-delay reduction for near-/sub-threshold circuits

2013 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2013, p.121-124

2013

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A 0.18μm front end for ECG/EEG/neural sensor interface

2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2012, p.107-109

2012

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A 0.2a2 Gb/s 6x OSR Receiver Using a Digitally Self-Adaptive Equalizer

IEEE journal of solid-state circuits, 2008-01, Vol.43 (6)

2008

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A 0.2V 16Kb 9T SRAM with bitline leakage equalization and CAM-assisted write performance boosting for improving energy efficiency

2012 IEEE Asian Solid State Circuits Conference (A-SSCC), 2012, p.73-76

2012

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A 0.45 V 100-Channel Neural-Recording IC With Sub-[Formula Omitted]/Channel Consumption in 0.18 [Formula Omitted] CMOS

IEEE transactions on biomedical circuits and systems, 2013-12, Vol.7 (6), p.735

2013

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A 0.45 V 100-Channel Neural-Recording IC With Sub- \mu /Channel Consumption in 0.18 \mu CMOS

IEEE transactions on biomedical circuits and systems, 2013-12, Vol.7 (6), p.735-746

2013

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A 0.45 V 100-Channel Neural-Recording IC With Sub- mu rm W /Channel Consumption in 0.18 mu rm m CMOS

IEEE transactions on biomedical circuits and systems, 2013-12, Vol.7 (6), p.735-746

2013

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A 0.45 V 100-channel neural-recording IC with sub- μW/channel consumption in 0.18 μm CMOS

IEEE transactions on biomedical circuits and systems, 2013-12, Vol.7 (6), p.735-746

2013

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A 0.45V 100-channel neural-recording IC with sub-µW/channel consumption in 0.18µm CMOS

2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers, 2013, p.290-291

2013

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A 0.5-V sub-μW/channel neural recording IC with delta-modulation-based spike detection

2014 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2014, p.189-192

2014

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0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser

IEEE photonics technology letters, 2003-07, Vol.15 (7), p.894-896

2003

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A 0.5V 16nW 8.08-ENOB SAR ADC for ultra-low power sensor applications

2013 IEEE MTT-S International Microwave Workshop Series on RF and Wireless Technologies for Biomedical and Healthcare Applications (IMWS-BIO), 2013, p.1-3

2013

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A 0.5V 29pJ/cycle sensor node processor for intelligent sensing applications

2014 International SoC Design Conference (ISOCC), 2014, p.70-71

2014

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A 0.6-V Low Power UWB CMOS LNA

IEEE microwave and wireless components letters, 2007-03, Vol.17 (3), p.229-231

2007

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0-600 kev Gamma-Ray Spectra from Thermal Neutron Capture in the Region A = 104 to 198

Physical review, 1959-04, Vol.114 (1), p.268-278

Draper, James E.

1959

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A 0.7V 17fJ/Step-FOMW 178.1dB-FOMSNDR 10kHz-BW 560mVPP True-ExG Biopotential Acquisition System with Parasitic-Insensitive 421MΩ Input Impedance in 0.18μm CMOS

2022 IEEE International Solid- State Circuits Conference (ISSCC), 2022, Vol.65, p.336-338

2022

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0.8 μm CMOS analog front-end processor for 4x speed CD-ROM

1996. Digest of Technical Papers., International Conference on Consumer Electronics, 1996, p.420

1996

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0.8 mu m CMOS analog front-end processor for 4X speed CD-ROM

IEEE transactions on consumer electronics, 1996-08, Vol.42 (3), p.826-831

1996

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0.8 mum CMOS analog front-end processor for 4x speed CD-ROM

IEEE transactions on consumer electronics, 1996-08, Vol.42 (3), p.826-831

1996

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A 0.8-mW 55-GHz Dual-Injection-Locked CMOS Frequency Divider

IEEE transactions on microwave theory and techniques, 2008-03, Vol.56 (3), p.620-625

2008

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0.8 /spl mu/m CMOS analog front-end processor for 4/spl times/ speed CD-ROM

IEEE transactions on consumer electronics, 1996-08, Vol.42 (3), p.826-831

1996

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A 0.8 V Supply- and Temperature-Insensitive Capacitance-to-Digital Converter in 0.18-[Formula Omitted] CMOS

IEEE sensors journal, 2016-01, Vol.16 (13), p.5354

2016

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A 0.0046mm2 6.7μW Three-Stage Amplifier Capable of Driving 0.5-to-1.9nF Capacitive Load with >0.68MHz GBW without Compensation Zero

A 0.06-mm2 double-sampling single-OTA 2nd-order ΔΣ modulator in 0.18-μm CMOS technology

0.1 Hz 4.0 PW Ti:Sapphire laser at CoReLS

A 0.18V charge-pumped DFF with 50.8% energy-delay reduction for near-/sub-threshold circuits

A 0.18μm front end for ECG/EEG/neural sensor interface

A 0.2a2 Gb/s 6x OSR Receiver Using a Digitally Self-Adaptive Equalizer

A 0.2V 16Kb 9T SRAM with bitline leakage equalization and CAM-assisted write performance boosting for improving energy efficiency

A 0.45 V 100-Channel Neural-Recording IC With Sub-[Formula Omitted]/Channel Consumption in 0.18 [Formula Omitted] CMOS

A 0.45 V 100-Channel Neural-Recording IC With Sub- \mu /Channel Consumption in 0.18 \mu CMOS

A 0.45 V 100-Channel Neural-Recording IC With Sub- mu rm W /Channel Consumption in 0.18 mu rm m CMOS

A 0.45 V 100-channel neural-recording IC with sub- μW/channel consumption in 0.18 μm CMOS

A 0.45V 100-channel neural-recording IC with sub-µW/channel consumption in 0.18µm CMOS

A 0.5-V sub-μW/channel neural recording IC with delta-modulation-based spike detection

0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser

A 0.5V 16nW 8.08-ENOB SAR ADC for ultra-low power sensor applications

A 0.5V 29pJ/cycle sensor node processor for intelligent sensing applications

A 0.6-V Low Power UWB CMOS LNA

0-600 kev Gamma-Ray Spectra from Thermal Neutron Capture in the Region A = 104 to 198

A 0.7V 17fJ/Step-FOMW 178.1dB-FOMSNDR 10kHz-BW 560mVPP True-ExG Biopotential Acquisition System with Parasitic-Insensitive 421MΩ Input Impedance in 0.18μm CMOS

0.8 μm CMOS analog front-end processor for 4x speed CD-ROM

0.8 mu m CMOS analog front-end processor for 4X speed CD-ROM

0.8 mum CMOS analog front-end processor for 4x speed CD-ROM

A 0.8-mW 55-GHz Dual-Injection-Locked CMOS Frequency Divider

0.8 /spl mu/m CMOS analog front-end processor for 4/spl times/ speed CD-ROM

A 0.8 V Supply- and Temperature-Insensitive Capacitance-to-Digital Converter in 0.18-[Formula Omitted] CMOS

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