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Buffer-eliminated, charge-neutral epitaxial graphene on oxidized 4H-SiC (0001) surface

Journal of applied physics, 2016-06, Vol.119 (21)

2016

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Atomic composition/configuration dependent bulk moduli of Al–C composites

AIP advances, 2022-11, Vol.12 (11), p.115008-115008-6

2022

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Recent advances in investigations of the electronic and optoelectronic properties of group III, IV, and V selenide based binary layered compounds

Journal of materials chemistry. C, Materials for optical and electronic devices, 2017, Vol.5 (43), p.11214-11225

2017

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Band engineering and magnetic doping of epitaxial graphene on SiC (0001)

Physical review letters, 2010-04, Vol.104 (14), p.146801-146801, Article 146801

2010

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Effect of Nanocarbon on the Structural and Mechanical Properties of 6061 Aluminum Composites by Powder Metallurgy

Nanomaterials (Basel, Switzerland), 2023-11, Vol.13 (22), p.2917

2023

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Multiple coexisting intercalation structures of sodium in epitaxial graphene-SiC interfaces

Physical review. B, Condensed matter and materials physics, 2012-03, Vol.85 (12), Article 125410

2012

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Transport in multiterminal graphene nanodevices

Nanotechnology, 2007-10, Vol.18 (42), p.424033-424033 (5)

2007

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Tunable indirect-direct transition of few-layer SnSe via interface engineering

Journal of physics. Condensed matter, 2017-10, Vol.29 (42), p.425501-425501

2017

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Cooling electrons in semiconductor devices: A model of evaporative emission

Physical review. B, Condensed matter and materials physics, 2007-01, Vol.75 (3), Article 035316

2007

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Dopant-induced indirect-direct transition and semiconductor-semimetal transition of bilayer SnSe

Journal of applied physics, 2019-12, Vol.126 (22)

2019

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Effect of phase-breaking events on electron transport in mesoscopic and nanodevices

International journal of quantum chemistry, 2008, Vol.108 (15), p.2896-2905

2008

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Symmetry induced semimetal-semiconductor transition in doped graphene

Scientific reports, 2016-01, Vol.6 (1), p.19115-19115, Article 19115

2016

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Tunable Electronics in Large-Area Atomic Layers of Boron–Nitrogen–Carbon

Nano letters, 2013-08, Vol.13 (8), p.3476-3481

2013

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Viable route towards large-area 2D MoS2 using magnetron sputtering

2d materials, 2017-06, Vol.4 (2)

2017

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Ab initio thermal transport properties of nanostructures from density functional perturbation theory

Journal of physics. Condensed matter, 2012-12, Vol.24 (49), p.492204-9

2012

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Charge transfer equilibria in ambient-exposed epitaxial graphene on (0001¯) 6 H-SiC

Journal of applied physics, 2012-06, Vol.111 (11)

2012

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Evaporative Cooling of Electrons in Semiconductor Devices

Physics of Semiconductors; Part B, 2005, Vol.772, p.1279-1280

2005

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Ge cages at the SiC/graphene interface: A first principles calculation

Journal of crystal growth, 2014-05, Vol.393, p.145-149

2014

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Lattice vacancy effects on electron transport in multiterminal graphene nanodevices

International journal of quantum chemistry, 2007, Vol.107 (15), p.3071-3076

2007

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Corrigendum: Viable route towards large-area 2D MoS 2 using magnetron sputtering (2017 2D Mater . 4 021002)

2d materials, 2017-07, Vol.4 (3), p.39502

2017

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Electronic and Structural Properties of Turbostratic Epitaxial Graphene on the 6H-SiC (000-1) Surface

Materials science forum, 2012, Vol.717-720, p.595-600

2012

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Viable route towards large-area 2D MoS 2 using magnetron sputtering

2d materials, 2017-01, Vol.4 (2), p.21002

2017

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Electronic transport of silicon nanowires with surface defects

International journal of quantum chemistry, 2009-12, Vol.109 (15), p.3705-3710

2009

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Publisher’s Note: “Charge transfer equilibria in ambient-exposed epitaxial graphene on (0001¯) 6 H-SiC” [J. Appl. Phys. 111, 113706 (2012)]

Journal of applied physics, 2012-07, Vol.112 (2)

2012

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Corrigendum: Viable route towards large-area 2D MoS2 using magnetron sputtering (2017 2D Mater. 4 021002)

2d materials, 2017-07, Vol.4 (3)

2017

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Buffer-eliminated, charge-neutral epitaxial graphene on oxidized 4H-SiC (0001) surface

Atomic composition/configuration dependent bulk moduli of Al–C composites

Recent advances in investigations of the electronic and optoelectronic properties of group III, IV, and V selenide based binary layered compounds

Band engineering and magnetic doping of epitaxial graphene on SiC (0001)

Effect of Nanocarbon on the Structural and Mechanical Properties of 6061 Aluminum Composites by Powder Metallurgy

Multiple coexisting intercalation structures of sodium in epitaxial graphene-SiC interfaces

Transport in multiterminal graphene nanodevices

Tunable indirect-direct transition of few-layer SnSe via interface engineering

Cooling electrons in semiconductor devices: A model of evaporative emission

Dopant-induced indirect-direct transition and semiconductor-semimetal transition of bilayer SnSe

Effect of phase-breaking events on electron transport in mesoscopic and nanodevices

Symmetry induced semimetal-semiconductor transition in doped graphene

Tunable Electronics in Large-Area Atomic Layers of Boron–Nitrogen–Carbon

Viable route towards large-area 2D MoS2 using magnetron sputtering

Ab initio thermal transport properties of nanostructures from density functional perturbation theory

Charge transfer equilibria in ambient-exposed epitaxial graphene on (0001¯) 6 H-SiC

Evaporative Cooling of Electrons in Semiconductor Devices

Ge cages at the SiC/graphene interface: A first principles calculation

Lattice vacancy effects on electron transport in multiterminal graphene nanodevices

Corrigendum: Viable route towards large-area 2D MoS 2 using magnetron sputtering (2017 2D Mater . 4 021002)

Electronic and Structural Properties of Turbostratic Epitaxial Graphene on the 6H-SiC (000-1) Surface

Viable route towards large-area 2D MoS 2 using magnetron sputtering

Electronic transport of silicon nanowires with surface defects

Publisher’s Note: “Charge transfer equilibria in ambient-exposed epitaxial graphene on (0001¯) 6 H-SiC” [J. Appl. Phys. 111, 113706 (2012)]

Corrigendum: Viable route towards large-area 2D MoS2 using magnetron sputtering (2017 2D Mater. 4 021002)

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