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Simulation of Single Particle Displacement Damage in Silicon-Part II: Generation and Long-Time Relaxation of Damage Structure

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.141-148

2017

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Comparative Study of Collision Cascades and Resulting Displacement Damage in GaN, Si, and Ge

IEEE transactions on nuclear science, 2024, Vol.71 (8), p.1461-1469

2024

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Simulation of Single Particle Displacement Damage in Silicon - Part I: Global Approach and Primary Interaction Simulation

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.133-140

2017

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Theoretical phase diagram of boron carbide from ambient to high pressure and temperature

Journal of applied physics, 2019-05, Vol.125 (18)

2019

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Simulation of Single Particle Displacement Damage in Si₁₋ ₓ Ge ₓ Alloys—Interaction of Primary Particles With the Material and Generation of the Damage Structure

IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1273-1283

2020

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Simulation of Single-Particle Displacement Damage in Silicon—Part III: First Principle Characterization of Defect Properties

IEEE transactions on nuclear science, 2018-02, Vol.65 (2), p.724-731

2018

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Radiation-Induced Variable Retention Time in Dynamic Random Access Memories

IEEE transactions on nuclear science, 2020-01, Vol.67 (1), p.234-244

2020

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Carbon-rich icosahedral boron carbide designed from first principles

Applied physics letters, 2014-07, Vol.105 (3)

2014

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Parametric study of the Two-Temperature Model for Molecular Dynamics simulations of collisions cascades in Si and Ge

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2020-12, Vol.485, p.1-9

2020

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Theoretical Raman spectrum of boron carbide B4.3C under pressure

Acta materialia, 2023-08, Vol.255, p.119085, Article 119085

2023

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Coping with the stochasticity of collision cascades in Molecular Dynamics simulations

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2021-08, Vol.500-501, p.1-9

2021

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Partn: A Plugin Implementation of the Activation Relaxation Technique Nouveau Hijacking a Minimisation Algorithm

Computer physics communications, 2023

2023

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A comprehensive theoretical picture of E centers in silicon: From optical properties to vacancy-mediated dopant diffusion

Journal of applied physics, 2020-02, Vol.127 (8)

2020

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Boron carbide under torsional deformation: Evidence of the formation of chain vacancies in the plastic regime

Acta materialia, 2022-03, Vol.226, p.117553, Article 117553

2022

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Growth of BiSb on GaAs (001) and (111)A surfaces: A joint experimental and theoretical study

Applied surface science, 2023-06, Vol.622, p.156688, Article 156688

2023

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Simulation of Single Particle Displacement Damage in Si₁₋ₓGeₓ Alloys-Interaction of Primary Particles With the Material and Generation of the Damage Structure

IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1273-1283

2020

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Finding Reaction Pathways and Transition States: r‑ARTn and d‑ARTn as an Efficient and Versatile Alternative to String Approaches

Journal of chemical theory and computation, 2020-10, Vol.16 (10), p.6726-6734

2020

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A comprehensive atomistic picture of the as-deposited Ni-Si interface before thermal silicidation process

Applied surface science, 2023-09, Vol.631, p.157563, Article 157563

2023

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Understanding first-order Raman spectra of boron carbides across the homogeneity range

Physical review materials, 2021-06, Vol.5 (6), Article 063601

2021

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Activation–Relaxation Technique: An efficient way to find minima and saddle points of potential energy surfaces

Computational materials science, 2022-06, Vol.209, p.111363, Article 111363

2022

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Understanding first order Raman spectra of boron carbides across the whole stoichiometry range

Physical review materials, 2021-06, Vol.5

2021

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Reply to “Comment on ‘Understanding first-order Raman spectra of boron carbides across the homogeneity range’ ”

Physical review materials, 2022-01, Vol.6 (1), Article 016602

2022

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Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study

2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021, p.128-132

2021

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Kinetic Monte Carlo for Process Simulation: First Principles Calibrated Parameters for BO2

2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021, p.219-223

2021

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Perspectives on War in the Twentieth Century

Contemporary European History, 2008-11, Vol.17 (4), p.567-573

2008

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Simulation of Single Particle Displacement Damage in Silicon-Part II: Generation and Long-Time Relaxation of Damage Structure

Comparative Study of Collision Cascades and Resulting Displacement Damage in GaN, Si, and Ge

Simulation of Single Particle Displacement Damage in Silicon - Part I: Global Approach and Primary Interaction Simulation

Theoretical phase diagram of boron carbide from ambient to high pressure and temperature

Simulation of Single Particle Displacement Damage in Si₁₋ ₓ Ge ₓ Alloys—Interaction of Primary Particles With the Material and Generation of the Damage Structure

Simulation of Single-Particle Displacement Damage in Silicon—Part III: First Principle Characterization of Defect Properties

Radiation-Induced Variable Retention Time in Dynamic Random Access Memories

Carbon-rich icosahedral boron carbide designed from first principles

Parametric study of the Two-Temperature Model for Molecular Dynamics simulations of collisions cascades in Si and Ge

Theoretical Raman spectrum of boron carbide B4.3C under pressure

Coping with the stochasticity of collision cascades in Molecular Dynamics simulations

Partn: A Plugin Implementation of the Activation Relaxation Technique Nouveau Hijacking a Minimisation Algorithm

A comprehensive theoretical picture of E centers in silicon: From optical properties to vacancy-mediated dopant diffusion

Boron carbide under torsional deformation: Evidence of the formation of chain vacancies in the plastic regime

Growth of BiSb on GaAs (001) and (111)A surfaces: A joint experimental and theoretical study

Simulation of Single Particle Displacement Damage in Si₁₋ₓGeₓ Alloys-Interaction of Primary Particles With the Material and Generation of the Damage Structure

Finding Reaction Pathways and Transition States: r‑ARTn and d‑ARTn as an Efficient and Versatile Alternative to String Approaches

A comprehensive atomistic picture of the as-deposited Ni-Si interface before thermal silicidation process

Understanding first-order Raman spectra of boron carbides across the homogeneity range

Activation–Relaxation Technique: An efficient way to find minima and saddle points of potential energy surfaces

Understanding first order Raman spectra of boron carbides across the whole stoichiometry range

Reply to “Comment on ‘Understanding first-order Raman spectra of boron carbides across the homogeneity range’ ”

Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study

Kinetic Monte Carlo for Process Simulation: First Principles Calibrated Parameters for BO2

Perspectives on War in the Twentieth Century

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