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Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors

Journal of applied physics, 2021-09, Vol.130 (10)

2021

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Study of deep traps in AlGaN/GaN high-electron mobility transistors by electrical characterization and simulation

Journal of applied physics, 2019-01, Vol.125 (3)

2019

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Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation

Energies (Basel), 2023-07, Vol.16 (14), p.5447

2023

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Modeling of Fermi-Level Pinning Alleviation With MIS Contacts: n and pMOSFETs Cointegration Considerations-Part I

IEEE transactions on electron devices, 2016-09, Vol.63 (9), p.3413-3418

2016

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Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors

Energies (Basel), 2022-10, Vol.15 (19), p.7062

2022

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Modeling of Fermi-Level Pinning Alleviation With MIS Contacts: n and pMOSFETs Cointegration Considerations-Part II

IEEE transactions on electron devices, 2016-09, Vol.63 (9), p.3419-3423

2016

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A unified short-channel compact model for cylindrical surrounding-gate MOSFET

Solid-state electronics, 2011-02, Vol.56 (1), p.40-46

2011

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Calculation of the mobility in Al2O3/GaN electron channel: Effect of p-doping and comparison with experiments

Solid-state electronics, 2022-12, Vol.198, p.108470, Article 108470

2022

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Further Insights in TFET Operation

IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2893-2898

2014

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On the Understanding of Cathode Related Trapping Effects in GaN-on-Si Schottky Diodes

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.956-964

2018

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Multi-VT UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

IEEE transactions on electron devices, 2011, Vol.58 (8), p.2473-2482

2011

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Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies-Part II: DC and AC Model Description

IEEE transactions on electron devices, 2015-09, Vol.62 (9), p.2760-2768

2015

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Gate length effect on trapping properties in AlGaN/GaN high-electron-mobility transistors

Semiconductor science and technology, 2019-03, Vol.34 (4), p.45011

2019

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MOS-like approach for compact modeling of High-Electron-Mobility Transistor

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020, p.221-224

2020

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Surge Current Capability in lateral AlGaN/GaN Hybrid Anode Diodes with p-GaN/Schottky Anode

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020, p.233-236

2020

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Impact of (Quasi-)Ballistic Transport on Operation of Complementary Metal--Oxide--Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices

Japanese Journal of Applied Physics, 2011-01, Vol.50 (1), p.014103-014103-7

2011

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Surface potential based model of ultra-thin fully depleted SOI MOSFET for IC simulations

IEEE 2011 International SOI Conference, 2011, p.1-22

2011

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A Pearson Effective Potential for Monte Carlo Simulation of Quantum Confinement Effects in nMOSFETs

IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3450-3458

2008

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Influence of AlGaN n-type doping and AlN thickness on the two-dimensional electron gas density (ns) and resistance (R2DEG)

Solid-state electronics, 2023-03, Vol.201, p.108594, Article 108594

2023

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Impact of (Quasi-)Ballistic Transport on Operation of Complementary Metal–Oxide–Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices

Japanese Journal of Applied Physics, 2011-01, Vol.50 (1R), p.14103

2011

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Multi- V T UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2473-2482

2011

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Gate length effect on trapping properties in AlGaN/GaN high-electron-mobility transistors

Semiconductor science and technology, 2019-03, Vol.34 (4)

2019

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Impact of Gate Morphology on Electrical Performances of Recessed GaN-on Si MOS channel-HEMT for Different Channel Orientations

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023, p.382-385

2023

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Extra-low parasitic gate-to-contacts capacitance architecture for sub-14 nm transistor nodes

Solid-state electronics, 2014-07, Vol.97, p.45-51

2014

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(Invited) Evaluation of Stacked Nanowires Transistors for CMOS: Performance and Technology Opportunities

ECS transactions, 2016-05, Vol.72 (4), p.43-54

2016

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Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors

Study of deep traps in AlGaN/GaN high-electron mobility transistors by electrical characterization and simulation

Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation

Modeling of Fermi-Level Pinning Alleviation With MIS Contacts: n and pMOSFETs Cointegration Considerations-Part I

Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors

Modeling of Fermi-Level Pinning Alleviation With MIS Contacts: n and pMOSFETs Cointegration Considerations-Part II

A unified short-channel compact model for cylindrical surrounding-gate MOSFET

Calculation of the mobility in Al2O3/GaN electron channel: Effect of p-doping and comparison with experiments

Further Insights in TFET Operation

On the Understanding of Cathode Related Trapping Effects in GaN-on-Si Schottky Diodes

Multi-VT UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies-Part II: DC and AC Model Description

Gate length effect on trapping properties in AlGaN/GaN high-electron-mobility transistors

MOS-like approach for compact modeling of High-Electron-Mobility Transistor

Surge Current Capability in lateral AlGaN/GaN Hybrid Anode Diodes with p-GaN/Schottky Anode

Impact of (Quasi-)Ballistic Transport on Operation of Complementary Metal--Oxide--Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices

Surface potential based model of ultra-thin fully depleted SOI MOSFET for IC simulations

A Pearson Effective Potential for Monte Carlo Simulation of Quantum Confinement Effects in nMOSFETs

Influence of AlGaN n-type doping and AlN thickness on the two-dimensional electron gas density (ns) and resistance (R2DEG)

Impact of (Quasi-)Ballistic Transport on Operation of Complementary Metal–Oxide–Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices

Multi- V T UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

Gate length effect on trapping properties in AlGaN/GaN high-electron-mobility transistors

Impact of Gate Morphology on Electrical Performances of Recessed GaN-on Si MOS channel-HEMT for Different Channel Orientations

Extra-low parasitic gate-to-contacts capacitance architecture for sub-14 nm transistor nodes

(Invited) Evaluation of Stacked Nanowires Transistors for CMOS: Performance and Technology Opportunities

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