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B cluster formation and dissolution in Si: A scenario based on atomistic modeling

Applied physics letters, 1999-06, Vol.74 (24), p.3657-3659

1999

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Atomistic modeling of defect diffusion and interdiffusion in SiGe heterostructures

Thin solid films, 2010-02, Vol.518 (9), p.2448-2453

2010

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The role of connexin43–Src interaction in astrocytomas: A molecular puzzle

Neuroscience, 2016-05, Vol.323, p.183-194

2016

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B diffusion and clustering in ion implanted Si: The role of B cluster precursors

Applied physics letters, 1997-04, Vol.70 (17), p.2285-2287

1997

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Carbon in silicon: Modeling of diffusion and clustering mechanisms

Journal of applied physics, 2002-08, Vol.92 (3), p.1582-1587

2002

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Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach

Applied physics letters, 2005-06, Vol.86 (25)

2005

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Comprehensive model of damage accumulation in silicon

Journal of applied physics, 2008-01, Vol.103 (1), p.014911-014911-7

2008

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Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon

Physical review. B, Condensed matter and materials physics, 2005-07, Vol.72 (3), Article 035202

2005

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Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

Applied physics letters, 1996-01, Vol.68 (3), p.409-411

1996

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Predictive Simulation of Advanced Nano-CMOS Devices Based on kMC Process Simulation

IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2155-2163

2007

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Improved binary collision approximation ion implant simulators

Journal of applied physics, 2002-01, Vol.91 (2), p.658-667

2002

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Simulation of cluster evaporation and transient enhanced diffusion in silicon

Applied physics letters, 1996-04, Vol.68 (17), p.2395-2397

1996

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The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-12, Vol.154, p.260-263

2008

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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Journal of applied physics, 1997-05, Vol.81 (9), p.6031-6050

1997

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Activation and deactivation of implanted B in Si

Applied physics letters, 1999-08, Vol.75 (5), p.662-664

1999

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Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation

Journal of applied physics, 2011-05, Vol.109 (10), p.103502-103502-13

2011

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Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

Journal of applied physics, 2005-08, Vol.98 (4), p.046104-046104-3

2005

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Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators

Journal of applied physics, 2005-09, Vol.98 (5), p.053709-053709-7

2005

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Diffusion and interactions of point defects in silicon: molecular dynamics simulations

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1995-08, Vol.102 (1), p.247-255

1995

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Mobile silicon di-interstitial: Surface, self-interstitial clustering, and transient enhanced diffusion phenomena

Physical review. B, Condensed matter, 2003-11, Vol.68 (19), Article 195204

2003

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Energetics of Self-Interstitial Clusters in Si

Physical review letters, 1999-05, Vol.82 (22), p.4460-4463

1999

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Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features

Applied physics letters, 2004-06, Vol.84 (24), p.4962-4964

2004

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Phase II trial of gemcitabine and UFT modulated by leucovorin in patients with advanced pancreatic carcinoma

Cancer, 2000-10, Vol.89 (8), p.1706-1713

2000

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Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-12, Vol.114, p.151-155

2004

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Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124-125, p.392-396

2005

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B cluster formation and dissolution in Si: A scenario based on atomistic modeling

Atomistic modeling of defect diffusion and interdiffusion in SiGe heterostructures

The role of connexin43–Src interaction in astrocytomas: A molecular puzzle

B diffusion and clustering in ion implanted Si: The role of B cluster precursors

Carbon in silicon: Modeling of diffusion and clustering mechanisms

Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach

Comprehensive model of damage accumulation in silicon

Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon

Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

Predictive Simulation of Advanced Nano-CMOS Devices Based on kMC Process Simulation

Improved binary collision approximation ion implant simulators

Simulation of cluster evaporation and transient enhanced diffusion in silicon

The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Activation and deactivation of implanted B in Si

Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation

Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators

Diffusion and interactions of point defects in silicon: molecular dynamics simulations

Mobile silicon di-interstitial: Surface, self-interstitial clustering, and transient enhanced diffusion phenomena

Energetics of Self-Interstitial Clusters in Si

Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features

Phase II trial of gemcitabine and UFT modulated by leucovorin in patients with advanced pancreatic carcinoma

Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation

Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations

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