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Full-Band Monte Carlo investigation of hole mobilities in SiGe, SiC and SiGeC alloys

Thin solid films, 2010-02, Vol.518 (9), p.2437-2441

2010

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On the validity of the effective mass approximation and the Luttinger k.p model in fully depleted SOI MOSFETs

Solid-state electronics, 2009-04, Vol.53 (4), p.452-461

2009

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Combined synchrotron x-ray diffraction and wafer curvature measurements during Ni-Si reactive film formation

Applied physics letters, 2005-07, Vol.87 (4), p.041904-041904-3

2005

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Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility

Journal of computational electronics, 2013-12, Vol.12 (4), p.675-684

2013

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Onsite matrix elements of the tight-binding Hamiltonian of a strained crystal: Application to silicon, germanium, and their alloys

Physical review. B, Condensed matter and materials physics, 2009-06, Vol.79 (24), Article 245201

2009

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Characterization and 3D TCAD simulation of NOR-type flash non-volatile memories with emphasis on corner effects

Solid-state electronics, 2011-09, Vol.63 (1), p.158-162

2011

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Monte Carlo simulation of high-energy transport of electrons and holes in bulk SiGeC alloys

Journal of physics. Conference series, 2009-11, Vol.193 (1), p.012037

2009

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TCAD modeling challenges for 14nm FullyDepleted SOI technology performance assessment

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015, p.4-7

2015

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New compact model for performance and process variability assessment in 14nm FDSOI CMOS technology

Proceedings of the 2015 International Conference on Microelectronic Test Structures, 2015, p.59-64

2015

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A constitutive single crystal model for the silicon mechanical behavior: Applications to the stress induced by silicided lines and STI in MOS technologies

Microelectronics and reliability, 2007-02, Vol.47 (2), p.161-167

2007

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Revisited RF Compact Model of Gate Resistance Suitable for High-K/Metal Gate Technology

IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.13-19

2013

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FEM-based method to determine mechanical stress evolution during process flow in microelectronics, application to stress–voiding

Microelectronics and reliability, 2007-02, Vol.47 (2), p.295-301

2007

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Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach-Part II: Transient Effects

IEEE transactions on electron devices, 2012-03, Vol.59 (3), p.621-630

2012

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An Efficient Nonlocal Hot Electron Model Accounting for Electron-Electron Scattering

IEEE transactions on electron devices, 2012-04, Vol.59 (4), p.983-993

2012

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Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach-Part I: Impedance Analysis

IEEE transactions on electron devices, 2012-03, Vol.59 (3), p.610-620

2012

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Pearson versus gaussian effective potentials for quantum-corrected Monte-Carlo simulation

Journal of computational electronics, 2007-09, Vol.6 (1-3), p.19-22

2007

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Characterization & modeling of gate-induced-drain-leakage with complete overlap and fringing model

2010 International Conference on Microelectronic Test Structures (ICMTS), 2010, p.210-213

2010

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Narrow-Width Effects on a Body-Tied Partially Depleted SOI MOSFET

IEEE transactions on electron devices, 2011-11, Vol.58 (11), p.3793-3800

2011

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LDMOS modeling for analog and RF circuit design

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005, 2005, p.469-472

2005

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Validity of the effective potential approach for the simulation of quantum confinement effects: A Monte-Carlo study

Journal of computational electronics, 2006-07, Vol.5 (2-3), p.171-175

2006

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On the accuracy of current TCAD hot carrier injection models in nanoscale devices

Solid-state electronics, 2010-12, Vol.54 (12), p.1669-1674

2010

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The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies

2014 44th European Solid State Device Research Conference (ESSDERC), 2014, p.254-257

2014

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Kinetic analysis and correlation with residual stress of the Ni/Si system in thin film

MRS proceedings, 2005, Vol.875, Article O14.5

2005

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Strained Si/SiGe MOSFET capacitance modeling based on band structure analysis

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005, 2005, p.281-284

2005

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A New Quasi Ballistic Model for Strained MOSFET

2005 International Conference On Simulation of Semiconductor Processes and Devices, 2005, p.303-306

2005

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Full-Band Monte Carlo investigation of hole mobilities in SiGe, SiC and SiGeC alloys

On the validity of the effective mass approximation and the Luttinger k.p model in fully depleted SOI MOSFETs

Combined synchrotron x-ray diffraction and wafer curvature measurements during Ni-Si reactive film formation

Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility

Onsite matrix elements of the tight-binding Hamiltonian of a strained crystal: Application to silicon, germanium, and their alloys

Characterization and 3D TCAD simulation of NOR-type flash non-volatile memories with emphasis on corner effects

Monte Carlo simulation of high-energy transport of electrons and holes in bulk SiGeC alloys

TCAD modeling challenges for 14nm FullyDepleted SOI technology performance assessment

New compact model for performance and process variability assessment in 14nm FDSOI CMOS technology

A constitutive single crystal model for the silicon mechanical behavior: Applications to the stress induced by silicided lines and STI in MOS technologies

Revisited RF Compact Model of Gate Resistance Suitable for High-K/Metal Gate Technology

FEM-based method to determine mechanical stress evolution during process flow in microelectronics, application to stress–voiding

Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach-Part II: Transient Effects

An Efficient Nonlocal Hot Electron Model Accounting for Electron-Electron Scattering

Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach-Part I: Impedance Analysis

Pearson versus gaussian effective potentials for quantum-corrected Monte-Carlo simulation

Characterization & modeling of gate-induced-drain-leakage with complete overlap and fringing model

Narrow-Width Effects on a Body-Tied Partially Depleted SOI MOSFET

LDMOS modeling for analog and RF circuit design

Validity of the effective potential approach for the simulation of quantum confinement effects: A Monte-Carlo study

On the accuracy of current TCAD hot carrier injection models in nanoscale devices

The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies

Kinetic analysis and correlation with residual stress of the Ni/Si system in thin film

Strained Si/SiGe MOSFET capacitance modeling based on band structure analysis

A New Quasi Ballistic Model for Strained MOSFET

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