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Improved package reliability of AlGaN/GaN HFETs on 150 mm Si substrates by SiNx/polyimide dual passivation layers

Surface & coatings technology, 2016-12, Vol.307, p.1124-1128

2016

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Bonding Pad Over Active Structure for Chip Shrinkage of High-Power AlGaN/GaN HFETs

IEEE transactions on electron devices, 2016-02, Vol.63 (2), p.620-624

2016

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Microsurgical treatment of distal middle cerebral artery aneurysm: A single-center review

Journal of Cerebrovascular and Endovascular Neurosurgery, 2024, 26(1), , pp.37-45

2024

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Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT

Japanese Journal of Applied Physics, 2019-12, Vol.58 (12), p.121003

2019

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Synergistic Ligand Effect in Rhodium(I)-Catalyzed Regio-Controlled Propene Hydroformylation

Organometallics, 2022-11, Vol.41 (21), p.3032-3037

2022

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High-resolution X-ray photoemission study of photo-grown Ga2O3 in GaN/AlGaN/GaN heterostructures on Si substrates

Journal of the Korean Physical Society, 2013, 63(12), , pp.2314-2318

2013

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Development of chip shrink technology for lateral-type GaN based HFETs using SiO2/polyimide dual IMD layers

Electronic materials letters, 2015-03, Vol.11 (2), p.213-216

2015

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Strain relaxation and dislocation annihilation in compositionally graded α-(AlxGa1-x)2O3 layer for high voltage α-Ga2O3 power devices

Acta materialia, 2021-12, Vol.221, p.117423, Article 117423

2021

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Effect of electron-beam irradiation on leakage current of AlGaN/GaN HEMTs on sapphire

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2013, 13(6), 54, pp.617-621

2013

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Ligand-induced suppression of undesirable pathways in cobalt-catalyzed hydroformylation

Cell reports physical science, 2024-06, Vol.5 (6), p.101983, Article 101983

2024

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The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

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Effect of AlxGa1−xN buffer layer on the structural and electrical properties of AlGaN/GaN/AlxGa1−xN double heterojunction high electron mobility transistor structures

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2020-03, Vol.38 (2)

2020

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Effect of ammonia pretreatment on crystal quality of N-polar GaN grown on SiC by metalorganic chemical vapor deposition

Thin solid films, 2019-04, Vol.675, p.148-152

2019

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High-power flexible AlGaN/GaN heterostructure field-effect transistors with suppression of negative differential conductance

Applied physics letters, 2017-09, Vol.111 (13)

2017

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Improved package reliability of AlGaN/GaN HFETs on 150mm Si substrates by SiNx/polyimide dual passivation layers

Surface & coatings technology, 2016-12, Vol.307, p.1124-1128

2016

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Microsurgical treatment of distal middle cerebral artery aneurysm: A single-center review

Journal of cerebrovascular and endovascular neurosurgery, 2024, Vol.26 (1), p.37-45

2024

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Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

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Current relaxation analysis in AlGaN/GaN high electron mobility transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2017-01, Vol.35 (1)

2017

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Output power enhancement in AlGaN/GaN heterostructure field-effect transistors with multilevel metallization

Applied physics express, 2017-01, Vol.10 (1), p.16502

2017

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Realization of high-power dimmable GaN-based LEDs by hybrid integration with AlGaN/GaN HFETs

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCC12

2019

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Effects of CF$_4$ Plasma Treatment on Electrostatic Discharge Performance of AlGaN/GaN Schottky Barrier Diodes

Sae mulli, 2017-01, Vol.67 (1), p.1-6

2017

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Alternating-current Light Emitting Diodes with a Diode Bridge Circuitry

Japanese Journal of Applied Physics, 2007-12, Vol.46 (12L), p.L1194

2007

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Effect of electron-beam irradiation on leakage current of AlGaN/GaN HEMTs on sapphire

Journal of semiconductor technology and science, 2013, Vol.13 (6), p.617-621

2013

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Editorial

Journal of semiconductor technology and science, 2015, Vol.15 (5), p.585-588

2015

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Investigation of the Characteristics of High-Power E-mode GaN Power Semiconductor by Plasma Process

Journal of the Institute of Electronics and Information Engineers, 2021-03, Vol.58 (3), p.43-50

2021

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Improved package reliability of AlGaN/GaN HFETs on 150 mm Si substrates by SiNx/polyimide dual passivation layers

Bonding Pad Over Active Structure for Chip Shrinkage of High-Power AlGaN/GaN HFETs

Microsurgical treatment of distal middle cerebral artery aneurysm: A single-center review

Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT

Synergistic Ligand Effect in Rhodium(I)-Catalyzed Regio-Controlled Propene Hydroformylation

High-resolution X-ray photoemission study of photo-grown Ga2O3 in GaN/AlGaN/GaN heterostructures on Si substrates

Development of chip shrink technology for lateral-type GaN based HFETs using SiO2/polyimide dual IMD layers

Strain relaxation and dislocation annihilation in compositionally graded α-(AlxGa1-x)2O3 layer for high voltage α-Ga2O3 power devices

Effect of electron-beam irradiation on leakage current of AlGaN/GaN HEMTs on sapphire

Ligand-induced suppression of undesirable pathways in cobalt-catalyzed hydroformylation

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

Effect of AlxGa1−xN buffer layer on the structural and electrical properties of AlGaN/GaN/AlxGa1−xN double heterojunction high electron mobility transistor structures

Effect of ammonia pretreatment on crystal quality of N-polar GaN grown on SiC by metalorganic chemical vapor deposition

High-power flexible AlGaN/GaN heterostructure field-effect transistors with suppression of negative differential conductance

Improved package reliability of AlGaN/GaN HFETs on 150mm Si substrates by SiNx/polyimide dual passivation layers

Microsurgical treatment of distal middle cerebral artery aneurysm: A single-center review

Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire

Current relaxation analysis in AlGaN/GaN high electron mobility transistors

Output power enhancement in AlGaN/GaN heterostructure field-effect transistors with multilevel metallization

Realization of high-power dimmable GaN-based LEDs by hybrid integration with AlGaN/GaN HFETs

Effects of CF$_4$ Plasma Treatment on Electrostatic Discharge Performance of AlGaN/GaN Schottky Barrier Diodes

Alternating-current Light Emitting Diodes with a Diode Bridge Circuitry

Effect of electron-beam irradiation on leakage current of AlGaN/GaN HEMTs on sapphire

Editorial

Investigation of the Characteristics of High-Power E-mode GaN Power Semiconductor by Plasma Process

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