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Triethanolamine doped multilayer MoS2 field effect transistors

Physical chemistry chemical physics : PCCP, 2017, Vol.19 (20), p.13133-13139

2017

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Anisotropic electrical and thermal characteristics of carbon nanotube-embedded wood

Cellulose (London), 2019-06, Vol.26 (9), p.5719-5730

2019

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Degradation pattern of black phosphorus multilayer field−effect transistors in ambient conditions: Strategy for contact resistance engineering in BP transistors

Applied surface science, 2017-10, Vol.419, p.637-641

2017

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Effect of Intertube Junctions on the Thermoelectric Power of Monodispersed Single Walled Carbon Nanotube Networks

Journal of physical chemistry. C, 2014-11, Vol.118 (46), p.26454-26461

2014

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Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors

Journal of applied physics, 2014-03, Vol.115 (11)

2014

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Induction heating effect on the performance of flexible MoS2 field-effect transistors

Applied physics letters, 2017-10, Vol.111 (15)

2017

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Current fluctuation of electron and hole carriers in multilayer WSe2 field effect transistors

Applied physics letters, 2015-12, Vol.107 (24)

2015

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Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

Journal of applied physics, 2014-12, Vol.116 (24)

2014

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Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation

Nanoscale, 2014-01, Vol.6 (1), p.433-441

2014

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Controlling charge balance using non-conjugated polymer interlayer in quantum dot light-emitting diodes

Organic electronics, 2017-11, Vol.50, p.82-86

2017

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On/off ratio enhancement in single-walled carbon nanotube field-effect transistor by controlling network density via sonication

Applied surface science, 2018-06, Vol.444, p.442-447

2018

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Electrical percolation thresholds of semiconducting single-walled carbon nanotube networks in field-effect transistors

Physical chemistry chemical physics : PCCP, 2015-03, Vol.17 (1), p.6874-688

2015

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Catalytic etching of monolayer graphene at low temperature via carbon oxidation

Physical chemistry chemical physics : PCCP, 2016-01, Vol.18 (1), p.11-19

2016

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Inductively coupled plasma etching of hafnium-indium-zinc oxide using chlorine based gas mixtures

Japanese Journal of Applied Physics, 2014-04, Vol.53 (4), p.46503-1-046503-6

2014

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Conductive multi-walled boron nitride nanotubes by catalytic etching using cobalt oxide

Physical chemistry chemical physics : PCCP, 2017-01, Vol.19 (2), p.976-985

2017

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Catalytically-etched hexagonal boron nitride flakes and their surface activity

Applied surface science, 2017-04, Vol.402, p.254-260

2017

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Surface Modulation of Graphene Field Effect Transistors on Periodic Trench Structure

ACS applied materials & interfaces, 2016-07, Vol.8 (28), p.18513-18518

2016

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Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors

Thin solid films, 2014-05, Vol.558, p.279-282

2014

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Low frequency noise reduction in multilayer WSe2 field effect transistors

2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), 2015, p.1118-1121

2015

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Real-time effect of electron beam on MoS 2 field-effect transistors

Nanotechnology, 2020-11, Vol.31 (45), p.455202

2020

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Real-time effect of electron beam on MoS2 field-effect transistors

Nanotechnology, 2020-11, Vol.31 (45), p.455202-455202

2020

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Capacitance-voltage analysis of electrical properties for WSe 2 field effect transistors with high-k encapsulation layer

Nanotechnology, 2018-02, Vol.29 (6), p.065703

2018

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Capacitance-voltage analysis of electrical properties for WSe2 field effect transistors with high-k encapsulation layer

Nanotechnology, 2018-02, Vol.29 (6), p.065703-065703

2018

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Triethanolamine doped multilayer MoS2 field effect transistorsElectronic supplementary information (ESI) available. See DOI: 10.1039/c7cp00589j

2017-05

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Triethanolamine doped multilayer MoS 2 field effect transistors

Physical chemistry chemical physics : PCCP, 2017-05, Vol.19 (20), p.13133-13139

2017

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Triethanolamine doped multilayer MoS2 field effect transistors

Anisotropic electrical and thermal characteristics of carbon nanotube-embedded wood

Degradation pattern of black phosphorus multilayer field−effect transistors in ambient conditions: Strategy for contact resistance engineering in BP transistors

Effect of Intertube Junctions on the Thermoelectric Power of Monodispersed Single Walled Carbon Nanotube Networks

Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors

Induction heating effect on the performance of flexible MoS2 field-effect transistors

Current fluctuation of electron and hole carriers in multilayer WSe2 field effect transistors

Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation

Controlling charge balance using non-conjugated polymer interlayer in quantum dot light-emitting diodes

On/off ratio enhancement in single-walled carbon nanotube field-effect transistor by controlling network density via sonication

Electrical percolation thresholds of semiconducting single-walled carbon nanotube networks in field-effect transistors

Catalytic etching of monolayer graphene at low temperature via carbon oxidation

Inductively coupled plasma etching of hafnium-indium-zinc oxide using chlorine based gas mixtures

Conductive multi-walled boron nitride nanotubes by catalytic etching using cobalt oxide

Catalytically-etched hexagonal boron nitride flakes and their surface activity

Surface Modulation of Graphene Field Effect Transistors on Periodic Trench Structure

Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors

Low frequency noise reduction in multilayer WSe2 field effect transistors

Real-time effect of electron beam on MoS 2 field-effect transistors

Real-time effect of electron beam on MoS2 field-effect transistors

Capacitance-voltage analysis of electrical properties for WSe 2 field effect transistors with high-k encapsulation layer

Capacitance-voltage analysis of electrical properties for WSe2 field effect transistors with high-k encapsulation layer

Triethanolamine doped multilayer MoS2 field effect transistorsElectronic supplementary information (ESI) available. See DOI: 10.1039/c7cp00589j

Triethanolamine doped multilayer MoS 2 field effect transistors

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