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Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures

Applied physics letters, 1999-04, Vol.74 (14), p.2002-2004

1999

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Transferable tight-binding parametrization for the group-III nitrides

Applied physics letters, 2002-12, Vol.81 (25), p.4838-4840

2002

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Full band approach to tunneling in MOS structures

IEEE transactions on electron devices, 2004-05, Vol.51 (5), p.741-748

2004

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IEEE_Xplore

Empirical spds tight-binding calculation for cubic semiconductors: General method and material parameters

Physical review. B, Condensed matter, 1998-03, Vol.57 (11), p.6493-6507

1998

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Giant birefringence in zinc-blende-based artificial semiconductors

Physical review. B, Condensed matter and materials physics, 2004-06, Vol.69 (24), Article 241303

2004

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Normal-incidence intersubband absorption in AlGaSb quantum wells

Journal of applied physics, 2002-07, Vol.92 (1), p.641-643

2002

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Calculation of Electronic States in Semiconductor Heterostructures with an Empirical spds Tight-Binding Model

physica status solidi (b), 2000-01, Vol.217 (1), p.449-460

2000

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1.26 μm intersubband transitions in In0.3Ga0.7As/AlAs quantum wells

Applied physics letters, 2000-12, Vol.77 (23), p.3767-3769

2000

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Bulk Inversion Asymmetry Spin-splitting in L-valley GaSb Quantum Wells

Physics of Semiconductors; Part B, 2005, Vol.772, p.1307-1308

2005

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Evidence of electronic confinement in pseudomorphic Si/GaAs superlattices

Physical review. B, Condensed matter, 1998-06, Vol.57 (24), p.R15100-R15103

1998

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InAs monolayers and the controlled introduction of deep levels in AlGaAs alloys

Applied physics letters, 1996-03, Vol.68 (11), p.1534-1536

1996

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MOVPE-growth and physics of ZnSe-ZnTe superlattices

Physica. B, Condensed matter, 1993-04, Vol.185 (1), p.109-111

1993

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Equations of state and a tight-binding model for strained layers : application to a ZnSe-GaAs epilayer

Physical review. B, Condensed matter, 1993-07, Vol.48 (4), p.2452-2459

1993

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Upper-conduction-band effects in heavily strained low-dimensional zinc-blende semiconductor systems

Physical review. B, 1994-04, Vol.49 (15), p.10802-10805

1994

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Tight-binding design of intersubband transitions in InGaAs/AlAs quantum heterostructures grown pseudomorphically on InP

Superlattices and microstructures, 1999-01, Vol.25 (1-2), p.351-355

1999

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Inversion asymmetry effects in L-valley quantum wells

4th IEEE Conference on Nanotechnology, 2004, 2004, p.485-487

2004

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IEEE_Xplore

[001] strain-induced band mixing in zinc-blende semiconductors: Intravalence versus upper-conduction-valence band effects

Physical review. B, Condensed matter, 1994-12, Vol.50 (23), p.16956-16963

1994

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Tight-binding study of ZnSe/ZnTe strained superlattices: Determination of the band offset from the optical properties

Physical review. B, Condensed matter, 1995-08, Vol.52 (7), p.5124-5131

1995

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Reply to "Comment on 'Upper-conduction-band effects in heavily strained low-dimensional zinc-blende semiconductor systems' "

Physical review. B, Condensed matter, 1995-03, Vol.51 (12), p.7929-7930

1995

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Optical transitions involving unconfined energy states in superlattices

Physical review. B, Condensed matter, 1992-08, Vol.46 (8), p.4988-4991

1992

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Uniaxial-stress determination of the symmetry of excitons associated with the miniband dispersion in (Ga,In)As-GaAs superlattices

Physical review. B, Condensed matter, 1992-08, Vol.46 (8), p.4764-4768

1992

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Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures

Transferable tight-binding parametrization for the group-III nitrides

Full band approach to tunneling in MOS structures

Empirical spds tight-binding calculation for cubic semiconductors: General method and material parameters

Giant birefringence in zinc-blende-based artificial semiconductors

Normal-incidence intersubband absorption in AlGaSb quantum wells

Calculation of Electronic States in Semiconductor Heterostructures with an Empirical spds Tight-Binding Model

1.26 μm intersubband transitions in In0.3Ga0.7As/AlAs quantum wells

Bulk Inversion Asymmetry Spin-splitting in L-valley GaSb Quantum Wells

Evidence of electronic confinement in pseudomorphic Si/GaAs superlattices

InAs monolayers and the controlled introduction of deep levels in AlGaAs alloys

MOVPE-growth and physics of ZnSe-ZnTe superlattices

Equations of state and a tight-binding model for strained layers : application to a ZnSe-GaAs epilayer

Upper-conduction-band effects in heavily strained low-dimensional zinc-blende semiconductor systems

Tight-binding design of intersubband transitions in InGaAs/AlAs quantum heterostructures grown pseudomorphically on InP

Inversion asymmetry effects in L-valley quantum wells

[001] strain-induced band mixing in zinc-blende semiconductors: Intravalence versus upper-conduction-valence band effects

Tight-binding study of ZnSe/ZnTe strained superlattices: Determination of the band offset from the optical properties

Reply to "Comment on 'Upper-conduction-band effects in heavily strained low-dimensional zinc-blende semiconductor systems' "

Optical transitions involving unconfined energy states in superlattices

Uniaxial-stress determination of the symmetry of excitons associated with the miniband dispersion in (Ga,In)As-GaAs superlattices

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