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A 36-channel parallel optical interconnect module based on optoelectronics-on-VLSI technology

IEEE journal of selected topics in quantum electronics, 2003-03, Vol.9 (2), p.387-399

2003

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Quantum well carrier sweep out: relation to electroabsorption and exciton saturation

IEEE journal of quantum electronics, 1991-10, Vol.27 (10), p.2281-2295

1991

Volltextzugriff (PDF)

Mode-locking ultrafast solid-state lasers with saturable Bragg reflectors

IEEE journal of selected topics in quantum electronics, 1996-09, Vol.2 (3), p.454-464

1996

Volltextzugriff (PDF)

High-power extremely shallow quantum-well modulators

IEEE photonics technology letters, 1991-05, Vol.3 (5), p.448-450

1991

Volltextzugriff (PDF)

Characterization of the GaAs: C and AlGaAs: C doping superlattice grown by chemical beam epitaxy

Journal of crystal growth, 1991-05, Vol.111 (1), p.274-279

1991

Volltextzugriff (PDF)

Short cavity erbium/ytterbium fiber lasers mode-locked with a saturable Bragg reflector

IEEE journal of selected topics in quantum electronics, 1997-08, Vol.3 (4), p.1065-1075

1997

Volltextzugriff (PDF)

Monolayer Be δ-doped heterostructure bipolar transistor fabricated using doping selective base contact

Electronics letters, 1990-01, Vol.26 (15), p.1187-1188

1990

Volltextzugriff (PDF)

1-Gb/s two-beam transimpedance smart-pixel optical receivers made from hybrid GaAs MQW modulators bonded to 0.8 μm silicon CMOS

IEEE photonics technology letters, 1996-03, Vol.8 (3), p.422-424

1996

Volltextzugriff (PDF)

Triggered receivers for optoelectronic VLSI

Electronics letters, 2000-02, Vol.36 (3), p.249-250, Article 249

2000

Volltextzugriff (PDF)

The AMOEBA switch: an optoelectronic switch for multiprocessor networking using dense-WDM

IEEE journal of selected topics in quantum electronics, 1999-03, Vol.5 (2), p.261-275

1999

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High-speed optoelectronic VLSI switching chip with >4000 optical I/O based on flip-chip bonding of MQW modulators and detectors to silicon CMOS

IEEE journal of selected topics in quantum electronics, 1996-04, Vol.2 (1), p.77-84, Article 77

1996

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InGaAs-InP P-I (MQW)-N surface-normal electroabsorption modulators exhibiting better than 8:1 contrast ratio for 1.55-/spl mu/m applications grown by gas-source MBE

IEEE photonics technology letters, 1994-12, Vol.6 (12), p.1439-1441

1994

Volltextzugriff (PDF)

Optoelectronic VLSI switching chip with greater than 1 Tbit/s potential optical I/O bandwidth

Electronics letters, 1997-05, Vol.33 (10), p.894, Article 894

1997

Volltextzugriff (PDF)

GaAs 850 nm modulators solder-bonded to silicon

IEEE photonics technology letters, 1993-07, Vol.5 (7), p.776-778

1993

Volltextzugriff (PDF)

Measurement of effective drift velocities of electrons and holes in shallow multiple-quantum-well p-i-n modulators

IEEE journal of quantum electronics, 1997-09, Vol.33 (9), p.1498-1506

1997

Volltextzugriff (PDF)

Clocked-sense-amplifier-based smart-pixel optical receivers

IEEE photonics technology letters, 1996-08, Vol.8 (8), p.1067-1069

1996

Volltextzugriff (PDF)

On the operational and manufacturing tolerances of GaAs-AlAs MQW modulators

IEEE journal of quantum electronics, 1998-03, Vol.34 (3), p.431-438

1998

Volltextzugriff (PDF)

InGaAs-InP P-I (MQW)-N surface-normal electroabsorption modulators exhibiting better than 8:1 contrast ratio for 1.55-μm applications grown by gas-source MBE

IEEE photonics technology letters, 1994-12, Vol.6 (12), p.1439-1441

1994

Volltextzugriff (PDF)

Parallel operation of 50 element two-dimensional CMOS smart-pixel receiver array

Electronics letters, 1998-05, Vol.34 (10), p.936, Article 936

1998

Volltextzugriff (PDF)

Interleaved-contact electroabsorption modulator using doping-selective electrodes with 25 degrees C to 95 degrees C operating range

IEEE photonics technology letters, 1993-02, Vol.5 (2), p.181-184

1993

Volltextzugriff (PDF)

A hybrid-SEED smart pixel array for a four-stage intelligent optical backplane demonstrator

IEEE journal of selected topics in quantum electronics, 1996-04, Vol.2 (1), p.97-105

1996

Volltextzugriff (PDF)

Operation of a single-ended 550 Mbit/s, 41 fJ, hybrid CMOS/MQW receiver-transmitter

Electronics letters, 1996, Vol.32 (8), p.764

1996

Volltextzugriff (PDF)

Stacked-diode electroabsorption modulator

IEEE photonics technology letters, 1994-08, Vol.6 (8), p.936-938

1994

Volltextzugriff (PDF)

30 G Omega isolation of GaAs devices on doped Si via undoped buffer layers-application to symmetric self-electrooptic effect devices

IEEE photonics technology letters, 1992-07, Vol.4 (7), p.763-765

1992

Volltextzugriff (PDF)

Optical bandwidth considerations in p-i-n multiple quantum-well modulators

Journal of lightwave technology, 1995-03, Vol.13 (3), p.461-464

1995

Volltextzugriff (PDF)

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A 36-channel parallel optical interconnect module based on optoelectronics-on-VLSI technology

Quantum well carrier sweep out: relation to electroabsorption and exciton saturation

Mode-locking ultrafast solid-state lasers with saturable Bragg reflectors

High-power extremely shallow quantum-well modulators

Characterization of the GaAs: C and AlGaAs: C doping superlattice grown by chemical beam epitaxy

Short cavity erbium/ytterbium fiber lasers mode-locked with a saturable Bragg reflector

Monolayer Be δ-doped heterostructure bipolar transistor fabricated using doping selective base contact

1-Gb/s two-beam transimpedance smart-pixel optical receivers made from hybrid GaAs MQW modulators bonded to 0.8 μm silicon CMOS

Triggered receivers for optoelectronic VLSI

The AMOEBA switch: an optoelectronic switch for multiprocessor networking using dense-WDM

High-speed optoelectronic VLSI switching chip with >4000 optical I/O based on flip-chip bonding of MQW modulators and detectors to silicon CMOS

InGaAs-InP P-I (MQW)-N surface-normal electroabsorption modulators exhibiting better than 8:1 contrast ratio for 1.55-/spl mu/m applications grown by gas-source MBE

Optoelectronic VLSI switching chip with greater than 1 Tbit/s potential optical I/O bandwidth

GaAs 850 nm modulators solder-bonded to silicon

Measurement of effective drift velocities of electrons and holes in shallow multiple-quantum-well p-i-n modulators

Clocked-sense-amplifier-based smart-pixel optical receivers

On the operational and manufacturing tolerances of GaAs-AlAs MQW modulators

InGaAs-InP P-I (MQW)-N surface-normal electroabsorption modulators exhibiting better than 8:1 contrast ratio for 1.55-μm applications grown by gas-source MBE

Parallel operation of 50 element two-dimensional CMOS smart-pixel receiver array

Interleaved-contact electroabsorption modulator using doping-selective electrodes with 25 degrees C to 95 degrees C operating range

A hybrid-SEED smart pixel array for a four-stage intelligent optical backplane demonstrator

Operation of a single-ended 550 Mbit/s, 41 fJ, hybrid CMOS/MQW receiver-transmitter

Stacked-diode electroabsorption modulator

30 G Omega isolation of GaAs devices on doped Si via undoped buffer layers-application to symmetric self-electrooptic effect devices

Optical bandwidth considerations in p-i-n multiple quantum-well modulators

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