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Contact Resistance Reduction to FinFET Source/Drain Using Novel Dielectric Dipole Schottky Barrier Height Modulation Method

IEEE electron device letters, 2011-07, Vol.32 (7), p.862-864

2011

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Study of piezoresistance under unixial stress for technologically relevant III-V semiconductors using wafer bending experiments

Applied physics letters, 2010-06, Vol.96 (24), p.242110-242110-3

2010

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Impact of Fin Doping and Gate Stack on FinFET (110) and (100) Electron and Hole Mobilities

IEEE electron device letters, 2012-03, Vol.33 (3), p.351-353

2012

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Carrier transport mechanism in La-incorporated high- k dielectric/metal gate stack MOSFETs

Microelectronic engineering, 2011-12, Vol.88 (12), p.3399-3403

2011

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on-State Performance Enhancement and Channel-Direction-Dependent Performance of a Biaxial Compressive Strained \hbox\hbox Quantum-Well pMOSFET Along \langle \hbox \rangle and \langle \hbox \rangle Channel Directions

IEEE transactions on electron devices, 2011-04, Vol.58 (4), p.985-995

2011

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The Effect of a Si Capping Layer on RF Characteristics of High- k /Metal Gate SiGe Channel pMOSFETs

IEEE electron device letters, 2010-10, Vol.31 (10), p.1104-1106

2010

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Comparison of Multilayer Dielectric Thin Films for Future Metal--Insulator--Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2

Jpn J Appl Phys, 2011-10, Vol.50 (10), p.10PB06-10PB06-4

2011

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Thermal Immune NiGermanide for High Performance Ge MOSFETs on Ge-on- Si Substrate Utilizing \hbox\hbox Alloy

IEEE transactions on electron devices, 2009-02, Vol.56 (2), p.348-353

2009

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Foreword

2016 IEEE Symposium on VLSI Technology, 2016, p.1-2

2016

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Erratum: "Comparison of Multilayer Dielectric Thin Films for Future Metal--Insulator--Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2"

Jpn J Appl Phys, 2011-12, Vol.50 (12), p.129202-129202-1

2011

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High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility

IEICE transactions on electronics, 2011, Vol.E94-C (5), p.712-716

2011

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Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-12, Vol.154, p.102-105

2008

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Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si Metal–Oxide–Semiconductor Capacitors and Field Effect Transistors

Japanese Journal of Applied Physics, 2008-04, Vol.47 (4S), p.2656

2008

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Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- k/Metal Gate Stacks Directly on SiGe

IEEE electron device letters, 2009-03, Vol.30 (3), p.285-287

2009

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Influence of an Oxide Interlayer Dielectric (ILD) Capping Layer on the Thermal Stability of Ni Germanide for Nanoscale Ge MOSFETs

Journal of the Korean Physical Society, 2009, 55(3), , pp.1026-1030

2009

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Influence of an Oxide Interlayer Dielectric (ILD) Capping Layeron the Thermal Stability of Ni Germanide for Nanoscale Ge MOSFETs

Journal of the Korean Physical Society, 2009-09, Vol.55 (3(1)), p.1026-1030

2009

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Si tunnel transistors with a novel silicided source and 46mV/dec swing

2010 Symposium on VLSI Technology, 2010, p.121-122

2010

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Life beyond Si: More Moore or More than Moore?

2010 IEEE International Integrated Reliability Workshop Final Report, 2010, p.ix-ix

Jammy, Raj

2010

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Suppression of Nickel-germanide (NiGe) Agglomeration and Ni Penetration by Hydrogen (H) Ion Shower Doping in NiGe on a Thin Epitaxial Ge-on-Si Substrate

Journal of the Korean Physical Society, 2009, 55(1), , pp.221-226

2009

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Effects of Parasitics and Interface Traps on Ballistic Nanowire FET in the Ultimate Quantum Capacitance Limit

IEEE transactions on electron devices, 2010-09, Vol.57 (9), p.2264-2273

2010

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Chemical analysis of HfO2∕Si (100) film systems exposed to NH3 thermal processing

Journal of applied physics, 2007-01, Vol.101 (2)

2007

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HFinFET: A Scalable, High Performance, Low Leakage Hybrid n-Channel FET

IEEE transactions on nanotechnology, 2010-05, Vol.9 (3), p.342-344

2010

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Dielectric dipole mitigated Schottky barrier height tuning using atomic layer deposited aluminum oxide for contact resistance reduction

Applied physics letters, 2011-09, Vol.99 (10), p.102108-102108-3

2011

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Characterizing crystalline polymorph transitions in HfO2 by extended x-ray absorption fine-structure spectroscopy

Applied physics letters, 2007-09, Vol.91 (12)

2007

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Prospect of tunneling green transistor for 0.1V CMOS

2010 International Electron Devices Meeting, 2010, p.16.1.1-16.1.4

2010

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Contact Resistance Reduction to FinFET Source/Drain Using Novel Dielectric Dipole Schottky Barrier Height Modulation Method

Study of piezoresistance under unixial stress for technologically relevant III-V semiconductors using wafer bending experiments

Impact of Fin Doping and Gate Stack on FinFET (110) and (100) Electron and Hole Mobilities

Carrier transport mechanism in La-incorporated high- k dielectric/metal gate stack MOSFETs

on-State Performance Enhancement and Channel-Direction-Dependent Performance of a Biaxial Compressive Strained \hbox\hbox Quantum-Well pMOSFET Along \langle \hbox \rangle and \langle \hbox \rangle Channel Directions

The Effect of a Si Capping Layer on RF Characteristics of High- k /Metal Gate SiGe Channel pMOSFETs

Comparison of Multilayer Dielectric Thin Films for Future Metal--Insulator--Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2

Thermal Immune NiGermanide for High Performance Ge MOSFETs on Ge-on- Si Substrate Utilizing \hbox\hbox Alloy

Foreword

Erratum: "Comparison of Multilayer Dielectric Thin Films for Future Metal--Insulator--Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2"

High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility

Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate

Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si Metal–Oxide–Semiconductor Capacitors and Field Effect Transistors

Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- k/Metal Gate Stacks Directly on SiGe

Influence of an Oxide Interlayer Dielectric (ILD) Capping Layer on the Thermal Stability of Ni Germanide for Nanoscale Ge MOSFETs

Influence of an Oxide Interlayer Dielectric (ILD) Capping Layeron the Thermal Stability of Ni Germanide for Nanoscale Ge MOSFETs

Si tunnel transistors with a novel silicided source and 46mV/dec swing

Life beyond Si: More Moore or More than Moore?

Suppression of Nickel-germanide (NiGe) Agglomeration and Ni Penetration by Hydrogen (H) Ion Shower Doping in NiGe on a Thin Epitaxial Ge-on-Si Substrate

Effects of Parasitics and Interface Traps on Ballistic Nanowire FET in the Ultimate Quantum Capacitance Limit

Chemical analysis of HfO2∕Si (100) film systems exposed to NH3 thermal processing

HFinFET: A Scalable, High Performance, Low Leakage Hybrid n-Channel FET

Dielectric dipole mitigated Schottky barrier height tuning using atomic layer deposited aluminum oxide for contact resistance reduction

Characterizing crystalline polymorph transitions in HfO2 by extended x-ray absorption fine-structure spectroscopy

Prospect of tunneling green transistor for 0.1V CMOS

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