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Grain boundary-driven leakage path formation in HfO2 dielectrics

Solid-state electronics, 2011-11, Vol.65-66, p.146-150

2011

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Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- k/Metal Gate Stacks Directly on SiGe

IEEE electron device letters, 2009-03, Vol.30 (3), p.285-287

2009

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Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

Applied physics letters, 2008-03, Vol.92 (9)

2008

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Which obesity index is a better predictor for cardiometabolic risk factors in a young adult rural population of Telangana State, India?

Journal of family medicine and primary care, 2020-09, Vol.9 (9), p.4667-4672

2020

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Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices

Applied physics letters, 2007-08, Vol.91 (6)

2007

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Work function engineering using lanthanum oxide interfacial layers

Applied physics letters, 2006-12, Vol.89 (23), p.232103-232103-3

2006

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Intrinsic Reliability Improvement in Biaxially Strained SiGe p-MOSFETs

IEEE electron device letters, 2011-03, Vol.32 (3), p.255-257

2011

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Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates

IEEE electron device letters, 2007-11, Vol.28 (11), p.1044-1046

2007

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Erase and Retention Improvements in Charge Trap Flash Through Engineered Charge Storage Layer

IEEE electron device letters, 2009-03, Vol.30 (3), p.216-218

2009

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Bulk and Interface effects on voltage linearity of ZrO2–SiO2 multilayered metal-insulator-metal capacitors for analog mixed-signal applications

Applied physics letters, 2009-07, Vol.95 (2)

2009

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Single-crystal Pb(ZrxTi1−x)O3 thin films prepared by metal-organic chemical vapor deposition: Systematic compositional variation of electronic and optical properties

Journal of applied physics, 1997-03, Vol.81 (5), p.2349-2357

1997

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Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation

IEEE electron device letters, 2009-11, Vol.30 (11), p.1140-1142

2009

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SILICON FINFETS AS DETECTORS OF TERAHERTZ AND SUB-TERAHERTZ RADIATION

International journal of high speed electronics, 2011-03, Vol.20 (1), p.27-42

2011

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Improvement of Thermal Stability of Ni Germanide Using a Ni-Pt(1%) Alloy on Ge-on-Si Substrate for Nanoscale Ge MOSFETs

IEEE transactions on nanotechnology, 2010-03, Vol.9 (2), p.258-263

2010

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Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric

Solid-state electronics, 2013-04, Vol.82, p.82-85

2013

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A Study of Strain Engineering Using CESL Stressor on Reliability Comparing Effect of Intrinsic Mechanical Stress

IEEE electron device letters, 2009-07, Vol.30 (7), p.760-762

2009

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Local structural modifications of the HfO2 layer in the Al2O3 capped high-k dielectric films as probed by EXAFS

Physica status solidi. A, Applications and materials science, 2012-04, Vol.209 (4), p.679-682

2012

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Improvement of metal gate/high-k dielectric CMOSFETs characteristics by neutral beam etching of metal gate

Solid-state electronics, 2013-08, Vol.86, p.75-78

2013

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Low-Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate Dielectric

IEEE electron device letters, 2009-05, Vol.30 (5), p.523-525

2009

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Comparison of Uniaxial Wafer Bending and Contact-Etch-Stop-Liner Stress Induced Performance Enhancement on Double-Gate FinFETs

IEEE electron device letters, 2008-05, Vol.29 (5), p.480-482

2008

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Understanding noise measurements in MOSFETs: the role of traps structural relaxation

2010 IEEE International Reliability Physics Symposium, 2010, p.73-79

2010

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Characterization of device performance and reliability of high performance Ge-on-Si field-effect transistor

Microelectronic engineering, 2011-12, Vol.88 (12), p.3424-3427

2011

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A Comparative NBTI Study of \hbox, \hbox, and SiON p-MOSFETs Using UF-OTF I Technique

IEEE electron device letters, 2009-02, Vol.30 (2), p.152-154

2009

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Gate stack technology for nanoscale devices

Materials today (Kidlington, England), 2006-06, Vol.9 (6), p.32-40

2006

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Grain boundary-driven leakage path formation in HfO2 dielectrics

2010 Proceedings of the European Solid State Device Research Conference, 2010, p.333-336

2010

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Grain boundary-driven leakage path formation in HfO2 dielectrics

Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- k/Metal Gate Stacks Directly on SiGe

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

Which obesity index is a better predictor for cardiometabolic risk factors in a young adult rural population of Telangana State, India?

Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices

Work function engineering using lanthanum oxide interfacial layers

Intrinsic Reliability Improvement in Biaxially Strained SiGe p-MOSFETs

Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates

Erase and Retention Improvements in Charge Trap Flash Through Engineered Charge Storage Layer

Bulk and Interface effects on voltage linearity of ZrO2–SiO2 multilayered metal-insulator-metal capacitors for analog mixed-signal applications

Single-crystal Pb(ZrxTi1−x)O3 thin films prepared by metal-organic chemical vapor deposition: Systematic compositional variation of electronic and optical properties

Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation

SILICON FINFETS AS DETECTORS OF TERAHERTZ AND SUB-TERAHERTZ RADIATION

Improvement of Thermal Stability of Ni Germanide Using a Ni-Pt(1%) Alloy on Ge-on-Si Substrate for Nanoscale Ge MOSFETs

Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric

A Study of Strain Engineering Using CESL Stressor on Reliability Comparing Effect of Intrinsic Mechanical Stress

Local structural modifications of the HfO2 layer in the Al2O3 capped high-k dielectric films as probed by EXAFS

Improvement of metal gate/high-k dielectric CMOSFETs characteristics by neutral beam etching of metal gate

Low-Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate Dielectric

Comparison of Uniaxial Wafer Bending and Contact-Etch-Stop-Liner Stress Induced Performance Enhancement on Double-Gate FinFETs

Understanding noise measurements in MOSFETs: the role of traps structural relaxation

Characterization of device performance and reliability of high performance Ge-on-Si field-effect transistor

A Comparative NBTI Study of \hbox, \hbox, and SiON p-MOSFETs Using UF-OTF I Technique

Gate stack technology for nanoscale devices

Grain boundary-driven leakage path formation in HfO2 dielectrics

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