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Immunization during a cerebrospinal meningitis epidemic in the Mongolian People's Republic, 1974-75

Bulletin of the World Health Organization, 1979, Vol.57 (6), p.943-946

1979

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Radioactive isotopes of Toson-Ula basin of Mongolia

AIP Conference Proceedings, 2018, Vol.2051 (1)

2018

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Optimization of biocatalytic processes of oxidation of viscous paraffin oil by soil microflora

AIP Conference Proceedings, 2018, Vol.2051 (1)

2018

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Mycoplasma penetrans is capable of activating V gamma 9/V delta 2 T cells while other human pathogenic mycoplasmas fail to do so

Infection and immunity, 2004-08, Vol.72 (8), p.4881-4883

2004

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High performance HgCdTe two-color infrared detectors grown by molecular beam epitaxy

Journal of crystal growth, 1997-05, Vol.175-176, p.653-658

1997

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Integrated multi-sensor system for real-time monitoring and control of HgCdTe MBE

Journal of electronic materials, 1999-06, Vol.28 (6), p.749-755

1999

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Status of HgCdTe-MBE technology for producing dual-band infrared detectors

Journal of crystal growth, 2000-06, Vol.214, p.1100-1105

2000

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Growth and properties of In- and As-doped HgCdTe by MBE

Journal of crystal growth, 1993-01, Vol.127 (1), p.365-370

1993

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HgCdTe molecular beam epitaxy technology: a focus on material properties

Journal of electronic materials, 1995-05, Vol.24 (5), p.423-429

1995

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Range and shape factors, damage, regrowth, and redistribution for Ag implants in (100) and (111) Si

Journal of applied physics, 1987-02, Vol.61 (4), p.1355-1358

1987

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Status of MBE technology for the flexible manufacturing of HgCdTe focal plane arrays

Journal of electronic materials, 1996-08, Vol.25 (8), p.1411-1415

1996

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Dependence of implanted Se and S profiles on GaAs implantation temperature and crystallinity

Applied physics letters, 1981-01, Vol.39 (9), p.715-717

1981

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Unannealed and annealed depth distributions of mercury implanted into silicon

Journal of applied physics, 1984-01, Vol.55 (2), p.327-330

1984

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Atom and acceptor depth distributions for aluminum channeled in silicon as a function of ion energy and crystal orientation

Journal of applied physics, 1986-10, Vol.60 (8), p.2806-2809

1986

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Mg and Be Ion Implanted GaAs

Journal of applied physics, 1972-01, Vol.43 (3), p.1318-1320

1972

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Chromium concentrations, depth distributions, and diffusion coefficient in bulk and epitaxial GaAs and in Si

Applied physics letters, 1980-02, Vol.36 (3), p.215-217

1980

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Status of HgCdTe-MBE technology for producing dual-band infrared detectors

Journal of crystal growth, 2000, Vol.214-15, p.1100-1105

2000

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Comparison of sources of boron, phosphorus, and arsenic ions

Applied physics letters, 1973-02, Vol.22 (4), p.176-179

1973

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High Performance HgCdTe-Detectors Grown by Molecular Beam Epitaxy

MRS proceedings, 1996, Vol.450, Article 257

1996

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Depth distributions of sulfur implanted into GaAs as a function of ion energy, ion fluence, and annealing temperature and encapsulation

Journal of applied physics, 1983-01, Vol.54 (7), p.3849-3854

1983

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High performance HgCdTe two-color infrared detectors grown by molecular beam epitaxy

Journal of crystal growth, 1997, Vol.175-76, p.653-658

1997

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Ion Implantation In Linbo3

MRS proceedings, 1983, Vol.24

1983

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Ion Implantation In Linbo 3

MRS proceedings, 1983, Vol.24, Article 181

1983

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Mass-separated ion source

Nuclear instruments & methods, 1971-01, Vol.91 (2), p.285-288

1971

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Mass Analysis of Ion Beams from a Low-Voltage Spark Ion Source for Ion-Implantation Doping of Semiconductors

Journal of applied physics, 1967-01, Vol.38 (4), p.1976-1977

1967

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Immunization during a cerebrospinal meningitis epidemic in the Mongolian People's Republic, 1974-75

Radioactive isotopes of Toson-Ula basin of Mongolia

Optimization of biocatalytic processes of oxidation of viscous paraffin oil by soil microflora

Mycoplasma penetrans is capable of activating V gamma 9/V delta 2 T cells while other human pathogenic mycoplasmas fail to do so

High performance HgCdTe two-color infrared detectors grown by molecular beam epitaxy

Integrated multi-sensor system for real-time monitoring and control of HgCdTe MBE

Status of HgCdTe-MBE technology for producing dual-band infrared detectors

Growth and properties of In- and As-doped HgCdTe by MBE

HgCdTe molecular beam epitaxy technology: a focus on material properties

Range and shape factors, damage, regrowth, and redistribution for Ag implants in (100) and (111) Si

Status of MBE technology for the flexible manufacturing of HgCdTe focal plane arrays

Dependence of implanted Se and S profiles on GaAs implantation temperature and crystallinity

Unannealed and annealed depth distributions of mercury implanted into silicon

Atom and acceptor depth distributions for aluminum channeled in silicon as a function of ion energy and crystal orientation

Mg and Be Ion Implanted GaAs

Chromium concentrations, depth distributions, and diffusion coefficient in bulk and epitaxial GaAs and in Si

Status of HgCdTe-MBE technology for producing dual-band infrared detectors

Comparison of sources of boron, phosphorus, and arsenic ions

High Performance HgCdTe-Detectors Grown by Molecular Beam Epitaxy

Depth distributions of sulfur implanted into GaAs as a function of ion energy, ion fluence, and annealing temperature and encapsulation

High performance HgCdTe two-color infrared detectors grown by molecular beam epitaxy

Ion Implantation In Linbo3

Ion Implantation In Linbo 3

Mass-separated ion source

Mass Analysis of Ion Beams from a Low-Voltage Spark Ion Source for Ion-Implantation Doping of Semiconductors

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