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On the mechanisms of cation injection in conducting bridge memories: The case of HfO2 in contact with noble metal anodes (Au, Cu, Ag)

Journal of applied physics, 2016-03, Vol.119 (11)

2016

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Ag/HfO2-based conductive bridge memories elaborated by atomic layer deposition: impact of inert electrode and HfO2 crystallinity on resistive switching mechanisms

Journal of materials science. Materials in electronics, 2020-08, Vol.31 (16), p.13487-13495

2020

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Impact of roughness of TiN bottom electrode on the forming voltage of HfO2 based resistive memories

Microelectronic engineering, 2020-01, Vol.221, p.111194, Article 111194

2020

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InP-based two-dimensional photonic crystal on silicon: In-plane Bloch mode laser

Applied physics letters, 2002-12, Vol.81 (27), p.5102-5104

2002

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CMOS compatible strategy based on selective atomic layer deposition of a hard mask for transferring block copolymer lithography patterns

Nanotechnology, 2010-10, Vol.21 (43), p.435301-435301

2010

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Performance and Modeling of Si-Nanocrystal Double-Layer Memory Devices With High- k Control Dielectrics

IEEE transactions on electron devices, 2012-04, Vol.59 (4), p.933-940

2012

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Passivated TiN nanocrystals/SiN trapping layer for enhanced erasing in nonvolatile memory

Applied physics letters, 2010-10, Vol.97 (15), p.152112

2010

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Very low threshold vertical emitting laser operation in InP graphite photonic crystal slab on silicon

Electronics letters, 2003-03, Vol.39 (6), p.526

2003

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The generic nature of the Smart-Cut® process for thin film transfer

Journal of electronic materials, 2001-07, Vol.30 (7), p.834-840

2001

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III-V layer transfer onto silicon and applications

Physica status solidi. A, Applications and materials science, 2005-03, Vol.202 (4), p.509-515

2005

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Two-dimensional hexagonal-shaped microcavities formed in a two-dimensional photonic crystal on an InP membrane

Journal of applied physics, 2003-01, Vol.93 (1), p.23-31

2003

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Double Si nanocrystal layers grown by RPCVD for non-volatile memory applications

Semiconductor science and technology, 2011-02, Vol.26 (2), p.025008

2011

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InP 2D photonic crystal microlasers on silicon wafer: Room temperature operation at 1.55 mu m

Electronics letters, 2001-06, Vol.37 (12), p.764-766

2001

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Investigation of Hybrid Molecular/Silicon Memories With Redox-Active Molecules Acting as Storage Media

IEEE transactions on nanotechnology, 2009-03, Vol.8 (2), p.204-213

2009

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Transfer of 3 in GaAs film on silicon substrate by proton implantation process

Electronics letters, 1998-02, Vol.34 (4), p.408

1998

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On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculations

2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2013, p.170-173

2013

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Integration of CVD silicon nanocrystals in a 32 Mb NOR flash memory

Solid-state electronics, 2008-09, Vol.52 (9), p.1452-1459

2008

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On the mechanisms of cation injection in conducting bridge memories: The case of HfO 2 in contact with noble metal anodes (Au, Cu, Ag)

Journal of applied physics, 2016-03, Vol.119 (11)

2016

Volltextzugriff (PDF)

Impact of roughness of TiN bottom electrode on the forming voltage of HfO$_2$ based resistive memories

Microelectronic engineering, 2020-01, Vol.221

2020

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InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6 mu m

Electronics letters, 2001-02, Vol.37 (4), p.222-223

2001

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Modal analysis and engineering on InP-based two-dimensional photonic-crystal microlasers on a Si wafer

IEEE journal of quantum electronics, 2003-03, Vol.39 (3), p.419-425

2003

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Compact Model for Oxygen Engineered Yttrium Oxide-Based Resistive Switching Devices

2022 IEEE 22nd International Conference on Nanotechnology (NANO), 2022, p.275-278

2022

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On the mechanisms of cation injection in conducting bridge memories: The case of HfO{sub 2} in contact with noble metal anodes (Au, Cu, Ag)

Journal of applied physics, 2016-03, Vol.119 (11)

2016

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Feasibility of III–V on-silicon strain relaxed substrates

Journal of crystal growth, 2005-02, Vol.275 (1), p.157-166

2005

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Endurance/Retention Trade Off in HfOx and TaOx Based RRAM

2016 IEEE 8th International Memory Workshop (IMW), 2016, p.1-4

2016

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On the mechanisms of cation injection in conducting bridge memories: The case of HfO2 in contact with noble metal anodes (Au, Cu, Ag)

Ag/HfO2-based conductive bridge memories elaborated by atomic layer deposition: impact of inert electrode and HfO2 crystallinity on resistive switching mechanisms

Impact of roughness of TiN bottom electrode on the forming voltage of HfO2 based resistive memories

InP-based two-dimensional photonic crystal on silicon: In-plane Bloch mode laser

CMOS compatible strategy based on selective atomic layer deposition of a hard mask for transferring block copolymer lithography patterns

Performance and Modeling of Si-Nanocrystal Double-Layer Memory Devices With High- k Control Dielectrics

Passivated TiN nanocrystals/SiN trapping layer for enhanced erasing in nonvolatile memory

Very low threshold vertical emitting laser operation in InP graphite photonic crystal slab on silicon

The generic nature of the Smart-Cut® process for thin film transfer

III-V layer transfer onto silicon and applications

Two-dimensional hexagonal-shaped microcavities formed in a two-dimensional photonic crystal on an InP membrane

Double Si nanocrystal layers grown by RPCVD for non-volatile memory applications

InP 2D photonic crystal microlasers on silicon wafer: Room temperature operation at 1.55 mu m

Investigation of Hybrid Molecular/Silicon Memories With Redox-Active Molecules Acting as Storage Media

Transfer of 3 in GaAs film on silicon substrate by proton implantation process

On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculations

Integration of CVD silicon nanocrystals in a 32 Mb NOR flash memory

On the mechanisms of cation injection in conducting bridge memories: The case of HfO 2 in contact with noble metal anodes (Au, Cu, Ag)

Impact of roughness of TiN bottom electrode on the forming voltage of HfO$_2$ based resistive memories

InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6 mu m

Modal analysis and engineering on InP-based two-dimensional photonic-crystal microlasers on a Si wafer

Compact Model for Oxygen Engineered Yttrium Oxide-Based Resistive Switching Devices

On the mechanisms of cation injection in conducting bridge memories: The case of HfO{sub 2} in contact with noble metal anodes (Au, Cu, Ag)

Feasibility of III–V on-silicon strain relaxed substrates

Endurance/Retention Trade Off in HfOx and TaOx Based RRAM

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