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Stretching magnetism with an electric field in a nitride semiconductor

Nature communications, 2016-10, Vol.7 (1), p.13232-13232, Article 13232

2016

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Influence of oxygen-rich and zinc-rich conditions on donor and acceptor states and conductivity mechanism of ZnO films grown by ALD—Experimental studies

Journal of applied physics, 2020-02, Vol.127 (7)

2020

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Observation of surface states on heavily indium-doped SnTe(111), a superconducting topological crystalline insulator

Physical review. B, 2016-02, Vol.93 (7), Article 075132

2016

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The effect of FeGa (0/–) level presence on material properties in dilute AlxGa1−xN layers

Journal of applied physics, 2024-05, Vol.135 (17)

2024

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Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures

Scientific reports, 2017-02, Vol.7 (1), p.41877-41877, Article 41877

2017

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Evidence for the homogeneous ferromagnetic phase in (Ga,Mn)(Bi,As) epitaxial layers from muon spin relaxation spectroscopy

Scientific reports, 2019-03, Vol.9 (1), p.3394-3394, Article 3394

2019

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ALD grown zinc oxide with controllable electrical properties

Semiconductor science and technology, 2012-07, Vol.27 (7), p.74011

2012

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Ultrahigh sensitivity SIMS analysis of oxygen in silicon

Surface and interface analysis, 2018-07, Vol.50 (7), p.729-733

2018

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Role of intrinsic and extrinsic defects in H implanted hydrothermally grown ZnO

Journal of applied physics, 2019-09, Vol.126 (12)

2019

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Schottky contacts to ZnO layers grown by Atomic Layer Deposition: effects of H2O2 functionalization and transport mechanisms

Applied surface science, 2021-06, Vol.552, p.149067, Article 149067

2021

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Effects of electron concentration on the optical absorption edge of InN

Applied physics letters, 2004-04, Vol.84 (15), p.2805-2807

2004

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Nitrogen doped p-type ZnO films and p-n homojunction

Semiconductor science and technology, 2015-01, Vol.30 (1), p.15001

2015

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Deep levels in the MBE ZnO:As/n-GaN diodes – Photoluminescence, electrical properties and deep level transient spectroscopy

Journal of alloys and compounds, 2018-04, Vol.742, p.296-303

2018

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ZnO:Sb MBE layers with different Sb content-optical, electronic and structural analysis

Journal of alloys and compounds, 2019-08, Vol.797, p.1163-1172

2019

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Accumulation of Arsenic Implantation-Induced Donor Defects in Hg0.7Cd0.3Te Heteroepitaxial Structures

Journal of electronic materials, 2021-06, Vol.50 (6), p.3714-3721

2021

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Band structure evolution and the origin of magnetism in (Ga,Mn)As: From paramagnetic through superparamagnetic to ferromagnetic phase

Physical review. B, 2018-03, Vol.97 (11), Article 115201

2018

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Electrical and mechanical stability of aluminum-doped ZnO films grown on flexible substrates by atomic layer deposition

Materials science & engineering. B, Solid-state materials for advanced technology, 2014-08, Vol.186, p.15-20

2014

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The uniformity of Al distribution in aluminum-doped zinc oxide films grown by atomic layer deposition

Materials science & engineering. B, Solid-state materials for advanced technology, 2011-02, Vol.176 (3), p.237-241

2011

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Atomic layer deposition of Zn1−x Mg x O:Al transparent conducting films

Journal of materials science, 2014-02, Vol.49 (4), p.1512-1518

2014

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Electrical and structural characterization of nitrogen doped ZnO layers grown at low temperature by atomic layer deposition

Semiconductor science and technology, 2014-08, Vol.29 (8), p.85006

2014

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XPS study of arsenic doped ZnO grown by Atomic Layer Deposition

Journal of alloys and compounds, 2014-01, Vol.582, p.594-597

2014

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Origin of magnetic circular dichroism in GaMnAs: giant zeeman splitting versus spin dependent density of states

Physical review letters, 2009-06, Vol.102 (24), p.247202-247202, Article 247202

2009

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Characteristics of ZnO : As/GaN heterojunction diodes obtained by PA-MBE

Journal of physics. D, Applied physics, 2013-01, Vol.46 (3), p.35101-1-6

2013

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Nano-size defect layers in arsenic-implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy

Applied nanoscience, 2020-12, Vol.10 (12), p.4971-4976

2020

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The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

Acta physica Polonica, A, 2019-12, Vol.136 (6), p.916-939

Jakie la, R.

2019

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Stretching magnetism with an electric field in a nitride semiconductor

Influence of oxygen-rich and zinc-rich conditions on donor and acceptor states and conductivity mechanism of ZnO films grown by ALD—Experimental studies

Observation of surface states on heavily indium-doped SnTe(111), a superconducting topological crystalline insulator

The effect of FeGa (0/–) level presence on material properties in dilute AlxGa1−xN layers

Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures

Evidence for the homogeneous ferromagnetic phase in (Ga,Mn)(Bi,As) epitaxial layers from muon spin relaxation spectroscopy

ALD grown zinc oxide with controllable electrical properties

Ultrahigh sensitivity SIMS analysis of oxygen in silicon

Role of intrinsic and extrinsic defects in H implanted hydrothermally grown ZnO

Schottky contacts to ZnO layers grown by Atomic Layer Deposition: effects of H2O2 functionalization and transport mechanisms

Effects of electron concentration on the optical absorption edge of InN

Nitrogen doped p-type ZnO films and p-n homojunction

Deep levels in the MBE ZnO:As/n-GaN diodes – Photoluminescence, electrical properties and deep level transient spectroscopy

ZnO:Sb MBE layers with different Sb content-optical, electronic and structural analysis

Accumulation of Arsenic Implantation-Induced Donor Defects in Hg0.7Cd0.3Te Heteroepitaxial Structures

Band structure evolution and the origin of magnetism in (Ga,Mn)As: From paramagnetic through superparamagnetic to ferromagnetic phase

Electrical and mechanical stability of aluminum-doped ZnO films grown on flexible substrates by atomic layer deposition

The uniformity of Al distribution in aluminum-doped zinc oxide films grown by atomic layer deposition

Atomic layer deposition of Zn1−x Mg x O:Al transparent conducting films

Electrical and structural characterization of nitrogen doped ZnO layers grown at low temperature by atomic layer deposition

XPS study of arsenic doped ZnO grown by Atomic Layer Deposition

Origin of magnetic circular dichroism in GaMnAs: giant zeeman splitting versus spin dependent density of states

Characteristics of ZnO : As/GaN heterojunction diodes obtained by PA-MBE

Nano-size defect layers in arsenic-implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

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