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The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

Acta physica Polonica, A, 2019-12, Vol.136 (6), p.916-939, Article 916

Jakie la, R.

2019

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Diffusion and impurity segregation in hydrogen-implanted silicon carbide

Journal of applied physics, 2014-06, Vol.115 (22)

2014

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X-ray photoelectron spectroscopy study of highly-doped ZnO:Al,N films grown at O-rich conditions

Journal of alloys and compounds, 2017-10, Vol.722, p.683-689

2017

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Detection of Si doping in the AlN/GaN MQW using Super X – EDS measurements

Micron (Oxford, England : 1993), 2020-07, Vol.134, p.102864-102864, Article 102864

2020

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Electron beam induced current profiling of the p-ZnO:N/ n -GaN heterojunction

Applied physics letters, 2015-02, Vol.106 (6)

2015

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Comparison of defect structure in Si and Ge ion implanted GaN epilayers by RBS/channeling

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2019-04, Vol.444, p.74-79

2019

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Analysis of defect structure in GaN epilayers doped with implanted Si+ by RBS/c method

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2019-07, Vol.450, p.248-251

2019

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The chemical states of As 3d in highly doped ZnO grown by Molecular Beam Epitaxy and annealed in different atmospheres

Thin solid films, 2016-04, Vol.605, p.283-288

2016

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Conductance spectra of (Nb, Pb, In)/NbP superconductor/Weyl semimetal junctions

Physical review. B, 2020-02, Vol.101 (8), Article 085113

2020

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Proton implantation for the isolation of AlGaAs/GaAs quantum cascade lasers

Semiconductor science and technology, 2016-07, Vol.31 (7), p.75010

2016

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Magnetic, optical and electrical characterization of SiC doped with scandium during the PVT growth

Journal of crystal growth, 2015-03, Vol.413, p.86-93

2015

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The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors. Acta Physica Polonica A 136, 916 (2019), ERRATUM

Acta physica Polonica, A, 2020-03, Vol.137 (3), p.437-438

Jakieła, R.

2020

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The influence of the growth temperature and interruption time on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods

Journal of crystal growth, 2008-05, Vol.310 (11), p.2785-2792

2008

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Polarity dependence of Mn incorporation in (Ga,Mn)N superlattices

Journal of crystal growth, 2016-03, Vol.437, p.49-52

2016

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Composite titanium nitride layers produced on the AZ91D magnesium alloy by a hybrid method including hydrothermal modification of the layer

Applied surface science, 2015-08, Vol.346, p.394-405

2015

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Growth of SiC by PVT method with different sources for doping by a cerium impurity, CeO2 or CeSi2

Journal of crystal growth, 2014-09, Vol.401, p.677-680

2014

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Incorporation of oxygen in SiC implanted with hydrogen

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2015-12, Vol.365, p.146-149

2015

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Optical observation of the recharging processes of manganese ions in YAlO3:Mn crystals under radiation and thermal treatment

Journal of physics. Condensed matter, 2006-06, Vol.18 (23), p.5389-5403

2006

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Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchange

Journal of crystal growth, 2014-10, Vol.403, p.77-82

2014

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ZnO, ZnMnO and ZnCoO films grown by atomic layer deposition

Semiconductor science and technology, 2012-07, Vol.27 (7), p.74009

2012

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Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy

Applied physics letters, 2008-10, Vol.93 (17), p.172117-172117-3

2008

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Fe-Mg interplay and the effect of deposition mode in (Ga,Fe)N doped with Mg

Physical review. B, Condensed matter and materials physics, 2011-10, Vol.84 (15), Article 155321

2011

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Amorphous contact layers on (Cd,Mn)Te crystals

Journal of crystal growth, 2011-04, Vol.320 (1), p.1-5

2011

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Dual-acceptor doped p-ZnO:(As,Sb)/n-GaN heterojunctions grown by PA-MBE as a spectrum selective ultraviolet photodetector

Physica status solidi. A, Applications and materials science, 2014-09, Vol.211 (9), p.2072-2077

2014

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Photoluminescence study and structural characterization of p-type ZnO doped by N and/or As acceptors

Semiconductor science and technology, 2007-02, Vol.22 (2), p.10-14

2007

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The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

Diffusion and impurity segregation in hydrogen-implanted silicon carbide

X-ray photoelectron spectroscopy study of highly-doped ZnO:Al,N films grown at O-rich conditions

Detection of Si doping in the AlN/GaN MQW using Super X – EDS measurements

Electron beam induced current profiling of the p-ZnO:N/ n -GaN heterojunction

Comparison of defect structure in Si and Ge ion implanted GaN epilayers by RBS/channeling

Analysis of defect structure in GaN epilayers doped with implanted Si+ by RBS/c method

The chemical states of As 3d in highly doped ZnO grown by Molecular Beam Epitaxy and annealed in different atmospheres

Conductance spectra of (Nb, Pb, In)/NbP superconductor/Weyl semimetal junctions

Proton implantation for the isolation of AlGaAs/GaAs quantum cascade lasers

Magnetic, optical and electrical characterization of SiC doped with scandium during the PVT growth

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors. Acta Physica Polonica A 136, 916 (2019), ERRATUM

The influence of the growth temperature and interruption time on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods

Polarity dependence of Mn incorporation in (Ga,Mn)N superlattices

Composite titanium nitride layers produced on the AZ91D magnesium alloy by a hybrid method including hydrothermal modification of the layer

Growth of SiC by PVT method with different sources for doping by a cerium impurity, CeO2 or CeSi2

Incorporation of oxygen in SiC implanted with hydrogen

Optical observation of the recharging processes of manganese ions in YAlO3:Mn crystals under radiation and thermal treatment

Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchange

ZnO, ZnMnO and ZnCoO films grown by atomic layer deposition

Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy

Fe-Mg interplay and the effect of deposition mode in (Ga,Fe)N doped with Mg

Amorphous contact layers on (Cd,Mn)Te crystals

Dual-acceptor doped p-ZnO:(As,Sb)/n-GaN heterojunctions grown by PA-MBE as a spectrum selective ultraviolet photodetector

Photoluminescence study and structural characterization of p-type ZnO doped by N and/or As acceptors

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