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Enhanced permanent degradation of organic TFT under electrical stress and visible light exposure

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2490-2494

2012

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Charge transport in 2,6-bis(5′-hexyl-2,2′-bithiophene-5-yl)naphthalene-based organic devices

Synthetic metals, 2016-01, Vol.211, p.84-88

2016

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Charge transport in 2,6-bis(5'-hexyl-2,2'-bithiophene-5-yl)naphthalene-ba sed organic devices

Synthetic metals, 2016-01, Vol.211, p.84-88

2016

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Low-energy UV effects on Organic Thin-Film-Transistors

2011 International Reliability Physics Symposium, 2011, p.2E.2.1-2E.2.8

2011

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Structural, electrical and optical properties of ZnO/Si structures prepared by sputtering or pulsed laser deposition

Journal of physics. Conference series, 2008, Vol.100 (4), p.042031

2008

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Growth of lanthanum oxide films for application as a gate dielectric in CMOS technology

Materials science in semiconductor processing, 2004, Vol.7 (4), p.231-236

2004

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Investigation of GaNxP1−x/GaP LED structure optical properties

Journal of electronic materials, 2006-04, Vol.35 (4), p.654-657

2006

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Near-UV Irradiation Effects on Pentacene-Based Organic Thin Film Transistors

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2911-2917

2011

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Visible Light and Low-Energy UV Effects on Organic Thin-Film Transistors

IEEE transactions on electron devices, 2012-05, Vol.59 (5), p.1501-1509

2012

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Surface and interface analysis of iodine-doped pentacene structures for OTFTs

Surface and interface analysis, 2011-01, Vol.43 (1-2), p.518-521

2011

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Improved Tolerance Against UV and Alpha Irradiation of Encapsulated Organic TFTs

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2979-2986

2012

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Defect Analysis of Pentacene Diode

Acta physica Polonica, A, 2014-04, Vol.125 (4), p.1038-1041

2014

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Evidence of pentacene bulk and thin film phase transformation into an orthorhombic phase by iodine diffusion

Chemical physics letters, 2010-01, Vol.484 (4), p.299-303

2010

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Effects of positive and negative constant voltage stress on organic TFTs

2013 IEEE International Reliability Physics Symposium (IRPS), 2013, p.XT.8.1-XT.8.6

2013

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Organic Thin Film Transistor degradation under sunlight exposure

2012 IEEE International Reliability Physics Symposium (IRPS), 2012, p.XT.6.1-XT.6.7

2012

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Preparation and properties of thin parylene layers as the gate dielectrics for organic field effect transistors

Microelectronics, 2009-03, Vol.40 (3), p.595-597

2009

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Investigation of GaN^sub x^P^sub 1-x^/GaP LED Structure Optical Properties

Journal of electronic materials, 2006-04, Vol.35 (4), p.654

2006

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Investigation of GaNxP1-x/GaP LED structure optical properties: Group III Nitrides, SiC, and ZnO

Journal of electronic materials, 2006, Vol.35 (4), p.654-657

2006

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Optical and structural investigation of GaNxP1−x/GaP structures for light emitting diodes

Vacuum, 2005-10, Vol.80 (1-3), p.229-235

2005

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Pentacene-Gate Dielectric Interface Modification with Silicon Nanoparticles for OTFTs

Physics procedia, 2012, Vol.32, p.285-288

2012

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Properties of 4-dicyanomethylene-2-methyl-6-(p-dimethyl-aminostyryl)-4H-pyran-doped Alq layers as optically pumped lasers

Applied physics letters, 2003-08, Vol.83 (7), p.1295-1297

2003

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Effects of soft-UV irradiation on organic thin film transistors with different gate dielectrics

The Eighth International Conference on Advanced Semiconductor Devices and Microsystems, 2010, p.171-174

2010

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Organic TFT with SiO2-parylene gate dielectric stack and optimized pentacene growth temperature

2009 Proceedings of the European Solid State Device Research Conference, 2009, p.201-204

2009

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Threshold voltage instability in organic TFT with SiO2 and SiO2/parylene-stack dielectrics

2009 IEEE International Reliability Physics Symposium, 2009, p.109-116

2009

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Structural analysis of annealed Al/n-InP(100) interfaces: Different types of indium heteroepitaxial growth on InP(111)A and InP(111)B planes

Journal of applied physics, 1998-07, Vol.84 (2), p.751-755

1998

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Enhanced permanent degradation of organic TFT under electrical stress and visible light exposure

Charge transport in 2,6-bis(5′-hexyl-2,2′-bithiophene-5-yl)naphthalene-based organic devices

Charge transport in 2,6-bis(5'-hexyl-2,2'-bithiophene-5-yl)naphthalene-ba sed organic devices

Low-energy UV effects on Organic Thin-Film-Transistors

Structural, electrical and optical properties of ZnO/Si structures prepared by sputtering or pulsed laser deposition

Growth of lanthanum oxide films for application as a gate dielectric in CMOS technology

Investigation of GaNxP1−x/GaP LED structure optical properties

Near-UV Irradiation Effects on Pentacene-Based Organic Thin Film Transistors

Visible Light and Low-Energy UV Effects on Organic Thin-Film Transistors

Surface and interface analysis of iodine-doped pentacene structures for OTFTs

Improved Tolerance Against UV and Alpha Irradiation of Encapsulated Organic TFTs

Defect Analysis of Pentacene Diode

Evidence of pentacene bulk and thin film phase transformation into an orthorhombic phase by iodine diffusion

Effects of positive and negative constant voltage stress on organic TFTs

Organic Thin Film Transistor degradation under sunlight exposure

Preparation and properties of thin parylene layers as the gate dielectrics for organic field effect transistors

Investigation of GaN^sub x^P^sub 1-x^/GaP LED Structure Optical Properties

Investigation of GaNxP1-x/GaP LED structure optical properties: Group III Nitrides, SiC, and ZnO

Optical and structural investigation of GaNxP1−x/GaP structures for light emitting diodes

Pentacene-Gate Dielectric Interface Modification with Silicon Nanoparticles for OTFTs

Properties of 4-dicyanomethylene-2-methyl-6-(p-dimethyl-aminostyryl)-4H-pyran-doped Alq layers as optically pumped lasers

Effects of soft-UV irradiation on organic thin film transistors with different gate dielectrics

Organic TFT with SiO2-parylene gate dielectric stack and optimized pentacene growth temperature

Threshold voltage instability in organic TFT with SiO2 and SiO2/parylene-stack dielectrics

Structural analysis of annealed Al/n-InP(100) interfaces: Different types of indium heteroepitaxial growth on InP(111)A and InP(111)B planes

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