UB Paderborn / Katalog / Suche / in CDI

Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping

IEEE electron device letters, 2005-11, Vol.26 (11), p.817-819

2005

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IEEE_Xplore

Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias

IEEE electron device letters, 2005-03, Vol.26 (3), p.178-180

2005

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Silicon Photonic Switches Hybrid-Integrated With CMOS Drivers

IEEE journal of solid-state circuits, 2012-01, Vol.47 (1), p.345-354

2012

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IEEE_Xplore

Demonstration of a Digital CMOS Driver Codesigned and Integrated With a Broadband Silicon Photonic Switch

Journal of lightwave technology, 2011-04, Vol.29 (8), p.1136-1142

2011

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IEEE_Xplore

High susceptibility domain configuration in micron-sized ferromagnetic stripes

IEEE transactions on magnetics, 1993-11, Vol.29 (6), p.3840-3842

1993

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IEEE_Xplore

Thin film disks with transient metal underlayers

IEEE transactions on magnetics, 1992-09, Vol.28 (5), p.3090-3092

1992

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IEEE_Xplore

Interference resonances in the permeability of laminated magnetic thin films

Journal of applied physics, 1990-10, Vol.68 (8), p.4290-4293

1990

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CrLVV Auger emission and photoreduction of hexavalent Cr oxides

Surface science, 1991-07, Vol.250 (1), p.139-146

1991

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Simple model of the high frequency permeability of narrow thin-film structures with eddy currents, walls, and saturation

IEEE transactions on magnetics, 1992-09, Vol.28 (5), p.2955-2957

1992

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IEEE_Xplore

The high field, high frequency permeability of narrow, thin-film magnetic stripes

IEEE transactions on magnetics, 1991-11, Vol.27 (6), p.4876-4878

1991

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IEEE_Xplore

High-Performance SiGe MODFET Technology

MRS proceedings, 2004, Vol.809, Article B7.2

2004

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Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC, 2004, p.107-108 vol.1

2004

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IEEE_Xplore

Magnetic properties of CoPtCr thin films with crystal orientation

Journal of applied physics, 1991, Vol.69 (8), p.5169-5171

1991

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High-frequency permeability of laminated and unlaminated, narrow thin-film magnetic stripes (invited)

Journal of applied physics, 1991-04, Vol.69 (8), p.5611-5615

1991

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Simultaneous fabrication of RF MEMS switches and resonators using copper-based CMOS interconnect manufacturing methods

17th IEEE International Conference on Micro Electro Mechanical Systems. Maastricht MEMS 2004 Technical Digest, 2004, p.789-792

2004

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IEEE_Xplore

Magnetic and structural characterization of sputtered FeN multilayer films

Journal of applied physics, 1991-11, Vol.70 (10), p.6427-6429

1991

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200 mm wafer-scale integration of sub-20 nm sacrificial nanofluidic channels for manipulating and imaging single DNA molecules

2013 IEEE International Electron Devices Meeting, 2013, p.14.1.1-14.1.4

2013

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IEEE_Xplore

80 nm gate-length Si∕Si0.7Ge0.3 n-MODFET with 194 GHz fmax

Electronics letters, 2003-11, Vol.39 (23), p.1684

2003

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20-μm-pitch eight-channel monolithic fiber array coupling 160 Gb/s/channel to silicon nanophotonic chip

2010 Conference on Optical Fiber Communication (OFC/NFOEC), collocated National Fiber Optic Engineers Conference, 2010, p.1-3

2010

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IEEE_Xplore

Broadband silicon photonic switch integrated with CMOS drive electronics

CLEO/QELS: 2010 Laser Science to Photonic Applications, 2010, p.1-2

2010

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IEEE_Xplore

Ion beam sputter deposited Permalloy thin films

IEEE transactions on magnetics, 1992-07, Vol.28 (4), p.1904-1910

1992

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IEEE_Xplore

Laterally scaled Si-Si/sub 0.7/Ge/sub 0.3/ n-MODFETs with f/sub max/>200 GHz and low operating bias

IEEE electron device letters, 2005-03, Vol.26 (3), p.178-180

2005

Link zum Volltext
IEEE_Xplore

Laterally scaled Si-Si sub(0.7)Ge sub(0.3) n-MODFETs with f sub(max)>200 GHz and low operating bias

IEEE electron device letters, 2005-01, Vol.26 (3)

2005

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80nm gate-length Si/Si^sub 0.7^Ge^sub 0.3^ n-MODFET with 194 GHz f^sub max

Electronics letters, 2003-11, Vol.39 (23), p.1

2003

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80nm gate-length Si/Si sub( 0.7)Ge sub( 0.3) n-MODFET with 194 GHz f sub( max)

Electronics letters, 2003-11, Vol.39 (23), p.1-1

2003

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Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping

Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias

Silicon Photonic Switches Hybrid-Integrated With CMOS Drivers

Demonstration of a Digital CMOS Driver Codesigned and Integrated With a Broadband Silicon Photonic Switch

High susceptibility domain configuration in micron-sized ferromagnetic stripes

Thin film disks with transient metal underlayers

Interference resonances in the permeability of laminated magnetic thin films

CrLVV Auger emission and photoreduction of hexavalent Cr oxides

Simple model of the high frequency permeability of narrow thin-film structures with eddy currents, walls, and saturation

The high field, high frequency permeability of narrow, thin-film magnetic stripes

High-Performance SiGe MODFET Technology

Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping

Magnetic properties of CoPtCr thin films with crystal orientation

High-frequency permeability of laminated and unlaminated, narrow thin-film magnetic stripes (invited)

Simultaneous fabrication of RF MEMS switches and resonators using copper-based CMOS interconnect manufacturing methods

Magnetic and structural characterization of sputtered FeN multilayer films

200 mm wafer-scale integration of sub-20 nm sacrificial nanofluidic channels for manipulating and imaging single DNA molecules

80 nm gate-length Si∕Si0.7Ge0.3 n-MODFET with 194 GHz fmax

20-μm-pitch eight-channel monolithic fiber array coupling 160 Gb/s/channel to silicon nanophotonic chip

Broadband silicon photonic switch integrated with CMOS drive electronics

Ion beam sputter deposited Permalloy thin films

Laterally scaled Si-Si/sub 0.7/Ge/sub 0.3/ n-MODFETs with f/sub max/>200 GHz and low operating bias

Laterally scaled Si-Si sub(0.7)Ge sub(0.3) n-MODFETs with f sub(max)>200 GHz and low operating bias

80nm gate-length Si/Si^sub 0.7^Ge^sub 0.3^ n-MODFET with 194 GHz f^sub max

80nm gate-length Si/Si sub( 0.7)Ge sub( 0.3) n-MODFET with 194 GHz f sub( max)

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