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Demonstration of High Performance Flexible In0.7Ga0.3As MOSFETs Using Liquid Polyimide (LPI) Transfer

IEEE electron device letters, 2022-06, Vol.43 (6), p.858-861

2022

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Electrical characteristics of metal–semiconductor–metal (MSM) varactors fabricated on In0.53Ga0.47As/InAs/In0.53Ga0.47As composite channel HEMT structure

Japanese Journal of Applied Physics, 2023-01, Vol.62 (1), p.010906

2023

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Fabrication of a vertically-stacked passive-matrix micro-LED array structure for a dual color display

Optics express, 2017-02, Vol.25 (3), p.2489-2495

2017

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Hybrid Full-Color Inorganic Light-Emitting Diodes Integrated on a Single Wafer Using Selective Area Growth and Adhesive Bonding

ACS photonics, 2018-11, Vol.5 (11), p.4413-4422

2018

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Fabrication and Characterization of In0.53Ga0.47As/InAs/In0.53Ga0.47As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate

Micromachines (Basel), 2023-01, Vol.14 (1), p.56

2023

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Effects of high-dose gamma-ray irradiation on an In0.53Ga0.47As high electron mobility transistor

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.020902

2024

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Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission

Scientific reports, 2017-09, Vol.7 (1), p.10333-9, Article 10333

2017

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Verification of Ge-on-insulator structure for a mid-infrared photonics platform

Optical materials express, 2018-02, Vol.8 (2), p.440

2018

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Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density

Applied physics letters, 2017-01, Vol.110 (4)

2017

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Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs

Materials, 2023-09, Vol.16 (18), p.6138

2023

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Fabrication of InGaAs-on-Insulator Substrates Using Direct Wafer-Bonding and Epitaxial Lift-Off Techniques

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3601-3608

2017

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Ag nanoparticles-embedded surface plasmonic InGaN-based solar cells via scattering and localized field enhancement

Optics express, 2016-07, Vol.24 (14), p.A1176-A1187

2016

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Low-Temperature Material Stacking of Ultrathin Body Ge (110)-on-Insulator Structure via Wafer Bonding and Epitaxial Liftoff From III–V Templates

IEEE transactions on electron devices, 2018-03, Vol.65 (3), p.1253-1257

2018

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Effect of indium composition on carrier escape in InGaN/GaN multiple quantum well solar cells

Applied physics letters, 2013-07, Vol.103 (3)

2013

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Thin Ni film on graphene current spreading layer for GaN-based blue and ultra-violet light-emitting diodes

Applied physics letters, 2013-04, Vol.102 (15)

2013

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Double-gated ultra-thin-body GaAs-on-insulator p-FETs on Si

APL materials, 2018-01, Vol.6 (1), p.016103-016103-8

2018

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Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.869-877

2019

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Improved Efficiency by Using Transparent Contact Layers in InGaN-Based p-i-n Solar Cells

IEEE electron device letters, 2010-10, Vol.31 (10), p.1140-1142

2010

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Heterogeneous Integration Toward a Monolithic 3-D Chip Enabled by III-V and Ge Materials

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.579-587

2018

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Improved Photovoltaic Effects of a Vertical-Type InGaN/GaN Multiple Quantum Well Solar Cell

Japanese Journal of Applied Physics, 2011-09, Vol.50 (9), p.092301-092301-5

2011

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Effect of in-situ Zn doping on suppression of phase separation in InxAl1−xAs epitaxial layer on InP(001) grown by MOCVD

Journal of alloys and compounds, 2023-09, Vol.955, Article 170195

2023

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Effect of III-nitride polarization on VOC in p-i-n and MQW solar cells

Physica status solidi. PSS-RRL. Rapid research letters, 2011-02, Vol.5 (2), p.86-88

2011

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Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel

IEEE transactions on electron devices, 2018-05, Vol.65 (5), p.1862-1868

2018

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Anisotropic surface morphology in a tensile-strained InAlAs layer grown on InP(100) substrates

Thin solid films, 2018-03, Vol.649, p.38-42

2018

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Au nanoparticle-decorated graphene electrodes for GaN-based optoelectronic devices

Applied physics letters, 2012-07, Vol.101 (3)

2012

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Demonstration of High Performance Flexible In0.7Ga0.3As MOSFETs Using Liquid Polyimide (LPI) Transfer

Electrical characteristics of metal–semiconductor–metal (MSM) varactors fabricated on In0.53Ga0.47As/InAs/In0.53Ga0.47As composite channel HEMT structure

Fabrication of a vertically-stacked passive-matrix micro-LED array structure for a dual color display

Hybrid Full-Color Inorganic Light-Emitting Diodes Integrated on a Single Wafer Using Selective Area Growth and Adhesive Bonding

Fabrication and Characterization of In0.53Ga0.47As/InAs/In0.53Ga0.47As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate

Effects of high-dose gamma-ray irradiation on an In0.53Ga0.47As high electron mobility transistor

Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission

Verification of Ge-on-insulator structure for a mid-infrared photonics platform

Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density

Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs

Fabrication of InGaAs-on-Insulator Substrates Using Direct Wafer-Bonding and Epitaxial Lift-Off Techniques

Ag nanoparticles-embedded surface plasmonic InGaN-based solar cells via scattering and localized field enhancement

Low-Temperature Material Stacking of Ultrathin Body Ge (110)-on-Insulator Structure via Wafer Bonding and Epitaxial Liftoff From III–V Templates

Effect of indium composition on carrier escape in InGaN/GaN multiple quantum well solar cells

Thin Ni film on graphene current spreading layer for GaN-based blue and ultra-violet light-emitting diodes

Double-gated ultra-thin-body GaAs-on-insulator p-FETs on Si

Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs

Improved Efficiency by Using Transparent Contact Layers in InGaN-Based p-i-n Solar Cells

Heterogeneous Integration Toward a Monolithic 3-D Chip Enabled by III-V and Ge Materials

Improved Photovoltaic Effects of a Vertical-Type InGaN/GaN Multiple Quantum Well Solar Cell

Effect of in-situ Zn doping on suppression of phase separation in InxAl1−xAs epitaxial layer on InP(001) grown by MOCVD

Effect of III-nitride polarization on VOC in p-i-n and MQW solar cells

Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel

Anisotropic surface morphology in a tensile-strained InAlAs layer grown on InP(100) substrates

Au nanoparticle-decorated graphene electrodes for GaN-based optoelectronic devices

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