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Control of Linear Chirps in Waveguide Bragg Gratings by Applying Designed Core Profiles

Journal of lightwave technology, 2009-11, Vol.27 (21), p.4809-4813

2009

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Structural, Optical, and Field Emission Properties of Hydrogenated Amorphous Carbon Films Grown by Helical Resonator Plasma Enhanced Chemical Vapor Deposition

Japanese Journal of Applied Physics, 1998-02, Vol.37 (2R), p.440

1998

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Formation of amorphous and crystalline phases, and phase transition by solid-state reaction in Zr/Si multilayer thin films

Thin solid films, 1995-11, Vol.269 (1-2), p.102-107

1995

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The field emission characteristics of a-C:H thin films prepared by helical resonator plasma enhanced chemical vapor deposition

Japanese Journal of Applied Physics, 1997-08, Vol.36 (8A), p.L1051-L1054

1997

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Fabrication of amorphous-carbon-nitride field emitters

Applied physics letters, 1997-07, Vol.71 (3), p.324-326

1997

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Mechanism of field emission from chemical vapor deposited undoped polycrystalline diamond films

Journal of applied physics, 2000-05, Vol.87 (10), p.7508-7518

2000

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Device characteristics of AlGaAs/InGaAs HEMTs fabricated by inductively coupled plasma etching

Thin solid films, 2003-07, Vol.435 (1), p.139-144

2003

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Extremely Low Noise Characteristics of 0.15 µm Power Metamorphic High-Electron-Mobility Transistors

Japanese Journal of Applied Physics, 2006-04, Vol.45 (4S), p.3380

2006

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Effect of non-diamond carbon etching on the field emission property of highly sp2 bonded nanocrystalline diamond films

Diamond and related materials, 2001, Vol.10 (3-7), p.847-851

2001

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Field emission property of chemical vapor deposited diamond overlayer films

Diamond and related materials, 2002-02, Vol.11 (2), p.185-190

2002

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Damage Potential of a Domestic Metropolitan Railway Bridge subjected to 2016 Gyeongju Earthquake

Journal of the Earthquake Engineering Society of Korea, 2016-12, Vol.20 (7 Special), p.461-472

2016

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DC and RF Characteristics of 0.15 um Power Metamorphic HEMTs

ETRI journal, 2005-12, Vol.27 (6), p.685-690

2005

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DC and RF Characteristics of 60 nm T-gate MHEMTs with 53% Indium Channel

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007, p.445-446

2007

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A 77 GHz mHEMT MMIC Chip Set for Automotive Radar Systems

ETRI Journal, 2005, 27(2), , pp.133-139

2005

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Effect of non-diamond carbon content on the spatial distributions of emission sites of the diamond films

Diamond and related materials, 2000-08, Vol.9 (8), p.1506-1511

2000

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Silicide formation in cobalt/amorphous silicon, amorphous CoSi and bias-induced CoSi films

Thin solid films, 1997-01, Vol.292 (1-2), p.31-39

1997

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Design and Implementation of 40-GHz-Band LNA MMICs with Super Low-Gain Flatness

Journal of the Korean Physical Society, 2002-04, Vol.40 (4), p.552

2002

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0.15 μm gate length MHEMT technology for 77GHz automotive radar applications

2004

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Sub-50 nm Template Fabrications for Nanoimprint Lithography Using Hydrogen Silsesquioxane and Silicon Nitride

Journal of nanoscience and nanotechnology, 2010-05, Vol.10 (5), p.3628-3630

2010

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Silicide formation in cobalt/amorphous silicon, amorphous Co Si and bias-induced Co Si films

Thin solid films, 1997-01, Vol.292 (1), p.31-39

1997

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Electron Emission From Diamond and Carbon Nitride Grown by Hot Filament Cvd or Helical Resonator Pecvd

MRS proceedings, 1996, Vol.424, Article 375

1996

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Gate Recess Process for 80-nm T-Shaped Gate Metamorphic HEMTs on GaAs Substrates

Journal of the Korean Physical Society, 2007, 50(3), , pp.889-892

2007

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Gate Recess Process for 80-nm T-Shaped Gate Metamorphic HEMTs on GaAs Substrates

Journal of the Korean Physical Society, 2007-03, Vol.50 (3), p.889

2007

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Effect of non-diamond carbon etching on the field emission property of highly sp 2 bonded nanocrystalline diamond films

Diamond and related materials, 2001, Vol.10 (3), p.847-851

2001

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A W-band MMIC One-Chip Set for Automotive Radar Sensor by using a 0.15μm mHEMT Process

2006 European Microwave Integrated Circuits Conference, 2006, p.328-331

2006

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Control of Linear Chirps in Waveguide Bragg Gratings by Applying Designed Core Profiles

Structural, Optical, and Field Emission Properties of Hydrogenated Amorphous Carbon Films Grown by Helical Resonator Plasma Enhanced Chemical Vapor Deposition

Formation of amorphous and crystalline phases, and phase transition by solid-state reaction in Zr/Si multilayer thin films

The field emission characteristics of a-C:H thin films prepared by helical resonator plasma enhanced chemical vapor deposition

Fabrication of amorphous-carbon-nitride field emitters

Mechanism of field emission from chemical vapor deposited undoped polycrystalline diamond films

Device characteristics of AlGaAs/InGaAs HEMTs fabricated by inductively coupled plasma etching

Extremely Low Noise Characteristics of 0.15 µm Power Metamorphic High-Electron-Mobility Transistors

Effect of non-diamond carbon etching on the field emission property of highly sp2 bonded nanocrystalline diamond films

Field emission property of chemical vapor deposited diamond overlayer films

Damage Potential of a Domestic Metropolitan Railway Bridge subjected to 2016 Gyeongju Earthquake

DC and RF Characteristics of 0.15 um Power Metamorphic HEMTs

DC and RF Characteristics of 60 nm T-gate MHEMTs with 53% Indium Channel

A 77 GHz mHEMT MMIC Chip Set for Automotive Radar Systems

Effect of non-diamond carbon content on the spatial distributions of emission sites of the diamond films

Silicide formation in cobalt/amorphous silicon, amorphous CoSi and bias-induced CoSi films

Design and Implementation of 40-GHz-Band LNA MMICs with Super Low-Gain Flatness

0.15 μm gate length MHEMT technology for 77GHz automotive radar applications

Sub-50 nm Template Fabrications for Nanoimprint Lithography Using Hydrogen Silsesquioxane and Silicon Nitride

Silicide formation in cobalt/amorphous silicon, amorphous Co Si and bias-induced Co Si films

Electron Emission From Diamond and Carbon Nitride Grown by Hot Filament Cvd or Helical Resonator Pecvd

Gate Recess Process for 80-nm T-Shaped Gate Metamorphic HEMTs on GaAs Substrates

Gate Recess Process for 80-nm T-Shaped Gate Metamorphic HEMTs on GaAs Substrates

Effect of non-diamond carbon etching on the field emission property of highly sp 2 bonded nanocrystalline diamond films

A W-band MMIC One-Chip Set for Automotive Radar Sensor by using a 0.15μm mHEMT Process

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